IT7919362A0 - Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso. - Google Patents
Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso.Info
- Publication number
- IT7919362A0 IT7919362A0 IT7919362A IT1936279A IT7919362A0 IT 7919362 A0 IT7919362 A0 IT 7919362A0 IT 7919362 A IT7919362 A IT 7919362A IT 1936279 A IT1936279 A IT 1936279A IT 7919362 A0 IT7919362 A0 IT 7919362A0
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductor device
- integrated circuit
- circuit semiconductor
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/916—Autodoping control or utilization
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/877,856 US4170501A (en) | 1978-02-15 | 1978-02-15 | Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT7919362A0 true IT7919362A0 (it) | 1979-01-17 |
Family
ID=25370869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT7919362A IT7919362A0 (it) | 1978-02-15 | 1979-01-17 | Dispositivo semiconduttore a circuito integrato e metodo di fabbricazione dello stesso. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4170501A (it) |
| JP (1) | JPS5585052A (it) |
| DE (1) | DE2904480B2 (it) |
| IT (1) | IT7919362A0 (it) |
| SE (1) | SE7900229L (it) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
| JPS57136342A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4487653A (en) * | 1984-03-19 | 1984-12-11 | Advanced Micro Devices, Inc. | Process for forming and locating buried layers |
| US5055417A (en) * | 1987-06-11 | 1991-10-08 | National Semiconductor Corporation | Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells |
| US5243214A (en) * | 1992-04-14 | 1993-09-07 | North American Philips Corp. | Power integrated circuit with latch-up prevention |
| JP3353277B2 (ja) * | 1992-09-25 | 2002-12-03 | ソニー株式会社 | エピタキシャルウェハの製造方法 |
| JP2647057B2 (ja) * | 1995-06-02 | 1997-08-27 | 日本電気株式会社 | 半導体装置 |
| JP3409548B2 (ja) | 1995-12-12 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
| US5731619A (en) * | 1996-05-22 | 1998-03-24 | International Business Machines Corporation | CMOS structure with FETS having isolated wells with merged depletions and methods of making same |
| DE102017121693B4 (de) * | 2017-09-19 | 2022-12-08 | Infineon Technologies Ag | Dotierungsverfahren |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL273009A (it) * | 1960-12-29 | |||
| GB1050478A (it) * | 1962-10-08 | |||
| US3479233A (en) * | 1967-01-16 | 1969-11-18 | Ibm | Method for simultaneously forming a buried layer and surface connection in semiconductor devices |
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
| FR2041710B1 (it) * | 1969-05-08 | 1974-06-14 | Radiotechnique Compelec | |
| US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
| BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
| US3885998A (en) * | 1969-12-05 | 1975-05-27 | Siemens Ag | Method for the simultaneous formation of semiconductor components with individually tailored isolation regions |
| DE2044863A1 (de) * | 1970-09-10 | 1972-03-23 | Siemens Ag | Verfahren zur Herstellung von Schottkydioden |
| US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
| US3961340A (en) * | 1971-11-22 | 1976-06-01 | U.S. Philips Corporation | Integrated circuit having bipolar transistors and method of manufacturing said circuit |
| JPS51116687A (en) * | 1975-04-07 | 1976-10-14 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS51132784A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of semiconductor device |
| JPS5261976A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
-
1978
- 1978-02-15 US US05/877,856 patent/US4170501A/en not_active Expired - Lifetime
-
1979
- 1979-01-10 SE SE7900229A patent/SE7900229L/xx unknown
- 1979-01-17 IT IT7919362A patent/IT7919362A0/it unknown
- 1979-02-07 DE DE2904480A patent/DE2904480B2/de not_active Withdrawn
- 1979-02-09 JP JP1490379A patent/JPS5585052A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2904480A1 (de) | 1979-08-16 |
| DE2904480B2 (de) | 1981-02-19 |
| JPS5585052A (en) | 1980-06-26 |
| SE7900229L (sv) | 1979-08-16 |
| US4170501A (en) | 1979-10-09 |
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