BRPI0514918A - dispositivo eletroquìmico - Google Patents

dispositivo eletroquìmico

Info

Publication number
BRPI0514918A
BRPI0514918A BRPI0514918-5A BRPI0514918A BRPI0514918A BR PI0514918 A BRPI0514918 A BR PI0514918A BR PI0514918 A BRPI0514918 A BR PI0514918A BR PI0514918 A BRPI0514918 A BR PI0514918A
Authority
BR
Brazil
Prior art keywords
layer
semiconductor
tio2
electrochemical device
thickness
Prior art date
Application number
BRPI0514918-5A
Other languages
English (en)
Inventor
Paul Andrew Christensen
Nicholas George Wright
Terrence Arthur Egerton
Original Assignee
Gen X Power Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen X Power Corp filed Critical Gen X Power Corp
Publication of BRPI0514918A publication Critical patent/BRPI0514918A/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/46Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/467Treatment of water, waste water, or sewage by electrochemical methods by electrolysis by electrochemical disinfection; by electrooxydation or by electroreduction
    • C02F1/4672Treatment of water, waste water, or sewage by electrochemical methods by electrolysis by electrochemical disinfection; by electrooxydation or by electroreduction by electrooxydation
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/46Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104Devices therefor; Their operating or servicing
    • C02F1/46109Electrodes
    • C02F2001/46133Electrodes characterised by the material
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/46Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104Devices therefor; Their operating or servicing
    • C02F1/46109Electrodes
    • C02F2001/46133Electrodes characterised by the material
    • C02F2001/46138Electrodes comprising a substrate and a coating
    • C02F2001/46142Catalytic coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Inert Electrodes (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Lubricants (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
  • Hybrid Cells (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)

Abstract

DISPOSITIVO ELETROQUìMICO é descrito um dispositivo eletroquímico que compreende: (a) uma camada semicondutora, em que o semicondutor é silício ou carboneto de silício, e onde a camada tem uma espessura de 1 a 1.00 1<a>m; (b) uma camada de TiO~ 2~ na camada semicondutora, ande a camada pode incluir um óxido de alcalino terroso MO até uma quantidade onde a camada é MtiO~ 3~, e onde a camada tem uma espessura de 5 nm a 1 1<a>m; (c) uma grade de metal inerte na camada de TiO~ 2~, arranjada de maneira a poder aplicar um campo elétrico através da camada de TiO~ 2~; e (d) um contato óhmico na camada semicondutora.
BRPI0514918-5A 2004-09-03 2005-09-02 dispositivo eletroquìmico BRPI0514918A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0419629.1A GB0419629D0 (en) 2004-09-03 2004-09-03 Electrochemical device
PCT/GB2005/003406 WO2006024869A1 (en) 2004-09-03 2005-09-02 Electrochemical device

Publications (1)

Publication Number Publication Date
BRPI0514918A true BRPI0514918A (pt) 2008-06-24

Family

ID=33156004

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0514918-5A BRPI0514918A (pt) 2004-09-03 2005-09-02 dispositivo eletroquìmico

Country Status (11)

Country Link
US (1) US7824537B2 (pt)
EP (1) EP1797010B1 (pt)
JP (1) JP4554683B2 (pt)
CN (1) CN100593229C (pt)
AT (1) ATE405525T1 (pt)
BR (1) BRPI0514918A (pt)
CA (1) CA2579079A1 (pt)
DE (1) DE602005009223D1 (pt)
GB (1) GB0419629D0 (pt)
RU (1) RU2007112120A (pt)
WO (1) WO2006024869A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0514581D0 (en) * 2005-07-15 2005-08-24 Univ Newcastle Methanol fuel cells
NZ590016A (en) 2010-12-17 2013-06-28 Waikatolink Ltd An electrolytic cell comprising at least two electrodes and at least one insulating layer with perforations
CN106865700A (zh) * 2017-02-14 2017-06-20 美的集团股份有限公司 电化学灭菌方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118239A (ja) * 1983-11-29 1985-06-25 Toshiba Corp 半導体光触媒
JPH0628737B2 (ja) * 1985-09-20 1994-04-20 株式会社東芝 半導体光触媒
JPH01143630A (ja) * 1987-11-27 1989-06-06 Ebara Res Co Ltd フロンの処理方法
JPH0461933A (ja) * 1990-06-25 1992-02-27 Mitsubishi Atom Power Ind Inc 光触媒機能エレメント管及び光触媒型化学反応装置
JP2517182B2 (ja) * 1991-06-03 1996-07-24 富士通株式会社 半導体基板及びその製造方法
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
JPH0620984A (ja) * 1992-06-29 1994-01-28 Toyota Motor Corp 半導体装置の裏面電極形成方法
US5395522A (en) * 1993-02-23 1995-03-07 Anatel Corporation Apparatus for removal of organic material from water
JPH09310170A (ja) * 1996-05-21 1997-12-02 Hoya Corp 炭化珪素薄膜構造体およびその作製方法
DE19844329B4 (de) 1998-09-28 2010-06-17 Friedrich-Schiller-Universität Jena Verfahren zur Behandlung von mit Mikroorganismen und Schadstoffen belasteten Flüssigkeiten
JP3389187B2 (ja) * 1998-12-31 2003-03-24 エルジー電子株式会社 フィルム型の光触媒
JP3622585B2 (ja) * 1999-08-05 2005-02-23 日本板硝子株式会社 光触媒活性を有する物品
JP2001205105A (ja) * 2000-01-28 2001-07-31 Matsushita Electric Ind Co Ltd 光触媒薄膜
JP2002001116A (ja) * 2000-06-20 2002-01-08 Kansai Research Institute 悪臭・有害物質含有気体または液体の処理方法および酸化還元反応触媒装置並びに酸化還元反応触媒
CN1189923C (zh) * 2002-09-27 2005-02-16 上海华虹(集团)有限公司 一种高介电栅介质结构及其制备方法
CN1319128C (zh) * 2003-01-02 2007-05-30 上海华虹(集团)有限公司 一种高介电栅堆层结构
WO2004081536A2 (en) * 2003-03-12 2004-09-23 Arizona Board Of Regents Radical activated cleavage of biologics and microfluidic devices using the same

Also Published As

Publication number Publication date
RU2007112120A (ru) 2008-10-10
CN101065328A (zh) 2007-10-31
US7824537B2 (en) 2010-11-02
DE602005009223D1 (de) 2008-10-02
JP4554683B2 (ja) 2010-09-29
CN100593229C (zh) 2010-03-03
EP1797010B1 (en) 2008-08-20
ATE405525T1 (de) 2008-09-15
WO2006024869A1 (en) 2006-03-09
EP1797010A1 (en) 2007-06-20
GB0419629D0 (en) 2004-10-06
US20080029384A1 (en) 2008-02-07
JP2008511435A (ja) 2008-04-17
CA2579079A1 (en) 2006-03-09

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2160 DE 29/05/2012.