BRPI0520592A2 - armazenamento de dados portátil usando memória flash slc e mlc - Google Patents

armazenamento de dados portátil usando memória flash slc e mlc

Info

Publication number
BRPI0520592A2
BRPI0520592A2 BRPI0520592-1A BRPI0520592A BRPI0520592A2 BR PI0520592 A2 BRPI0520592 A2 BR PI0520592A2 BR PI0520592 A BRPI0520592 A BR PI0520592A BR PI0520592 A2 BRPI0520592 A2 BR PI0520592A2
Authority
BR
Brazil
Prior art keywords
flash memory
data storage
slc
portable data
level cell
Prior art date
Application number
BRPI0520592-1A
Other languages
English (en)
Inventor
Henry Tan
Pin Teng Poo
Raymond Chim Shyan Ooi
Original Assignee
Trek 2000 Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trek 2000 Int Ltd filed Critical Trek 2000 Int Ltd
Publication of BRPI0520592A2 publication Critical patent/BRPI0520592A2/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/02—Analogue recording or reproducing
    • G11B20/04—Direct recording or reproducing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

ARMAZENAMENTO DE DADOS PORTáTIL USANDO MEMóRIA FLASH SLC E MLC. A presente invenção refere-se a um dispositivo portátil de armazenamento de dados que é descrito e que inclui uma interface (3) para ativar o dispositivo portátil de armazenamento de dados ser usado para transferência de dados com um computador hospedeiro (5) e um controlador de interface (2) para controlar a interface (3). Há também um controlador mestre (7) para controlar a escrita de dados e a leitura de dados de uma memória não volátil (8, 9). A memória não volátil é pelo menos uma memória flash de célula de nível único (SLC) (8) e pelo menos uma memória flash de célula de níveis múltiplos (MLC) (9). A pelo menos uma memória flash de célula de nível único (8) e a pelo menos uma memória flash de célula de níveis múltiplos (9) são capazes de operar, simultaneamente, para aperfeiçoar a velocidade de operação através da memória flash de célula de níveis múltiplos.
BRPI0520592-1A 2005-09-29 2005-09-29 armazenamento de dados portátil usando memória flash slc e mlc BRPI0520592A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2005/000328 WO2007037757A1 (en) 2005-09-29 2005-09-29 Portable data storage using slc and mlc flash memory

Publications (1)

Publication Number Publication Date
BRPI0520592A2 true BRPI0520592A2 (pt) 2009-05-19

Family

ID=37900063

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0520592-1A BRPI0520592A2 (pt) 2005-09-29 2005-09-29 armazenamento de dados portátil usando memória flash slc e mlc

Country Status (7)

Country Link
US (1) US8521945B2 (pt)
EP (1) EP1929482B1 (pt)
JP (1) JP5073667B2 (pt)
KR (1) KR101162739B1 (pt)
CN (1) CN101273413B (pt)
BR (1) BRPI0520592A2 (pt)
WO (1) WO2007037757A1 (pt)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8069296B2 (en) * 2006-01-23 2011-11-29 Kabushiki Kaisha Toshiba Semiconductor memory device including control means and memory system
KR100873825B1 (ko) * 2007-05-02 2008-12-15 삼성전자주식회사 비휘발성 메모리의 멀티 비트 프로그래밍 장치 및 방법
JP4781373B2 (ja) * 2007-05-14 2011-09-28 株式会社バッファロー 記憶装置
US7979627B2 (en) 2007-05-14 2011-07-12 Buffalo Inc. Storage device with binary and multivalued memory
KR101498673B1 (ko) 2007-08-14 2015-03-09 삼성전자주식회사 반도체 드라이브, 그것의 데이터 저장 방법, 그리고 그것을포함한 컴퓨팅 시스템
US20090055605A1 (en) 2007-08-20 2009-02-26 Zining Wu Method and system for object-oriented data storage
US8583857B2 (en) 2007-08-20 2013-11-12 Marvell World Trade Ltd. Method and system for object-oriented data storage
US20090164703A1 (en) * 2007-12-21 2009-06-25 Spansion Llc Flexible flash interface
US8001316B2 (en) * 2007-12-27 2011-08-16 Sandisk Il Ltd. Controller for one type of NAND flash memory for emulating another type of NAND flash memory
CN101552028A (zh) * 2008-03-31 2009-10-07 深圳市朗科科技股份有限公司 组合使用存储设备的存储装置及实现存储的方法
US8060719B2 (en) * 2008-05-28 2011-11-15 Micron Technology, Inc. Hybrid memory management
KR101497074B1 (ko) 2008-06-17 2015-03-05 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 데이터 관리 방법
US8762654B1 (en) * 2008-07-02 2014-06-24 Marvell International Ltd. Selectively scheduling memory accesses in parallel based on access speeds of memory
US8706951B2 (en) * 2008-07-18 2014-04-22 Marvell World Trade Ltd. Selectively accessing faster or slower multi-level cell memory
TWI403906B (zh) * 2008-09-17 2013-08-01 Silicon Motion Inc 快閃記憶裝置及其運作方法
TWI467369B (zh) * 2008-10-01 2015-01-01 A Data Technology Co Ltd 混合密度記憶體系統及其控制方法
KR101519931B1 (ko) 2009-03-06 2015-05-13 삼성전자주식회사 적층 구조의 저항성 메모리 장치, 이를 포함하는 메모리 시스템, 및 적층 가변저항 메모리 셀 어레이 층의 셀 타입 설정 방법
CN101546194B (zh) * 2009-05-07 2012-01-04 成都市华为赛门铁克科技有限公司 一种接口装置、接口控制方法以及存储系统
KR101026634B1 (ko) 2009-12-18 2011-04-04 성균관대학교산학협력단 하이브리드 플래시 메모리의 데이터 저장 방법
CN102385553A (zh) * 2010-08-31 2012-03-21 点序科技股份有限公司 闪存的存取装置及存取方法
US8780659B2 (en) 2011-05-12 2014-07-15 Micron Technology, Inc. Programming memory cells
US9032269B2 (en) 2011-07-22 2015-05-12 Sandisk Technologies Inc. Systems and methods of storing data
WO2014120660A1 (en) 2013-01-29 2014-08-07 Marvell World Trade Ltd. Methods and apparatus for storing data to a solid state storage device based on data classification
CN104641418B (zh) * 2013-08-19 2018-09-28 东芝存储器株式会社 存储系统
US20150169228A1 (en) * 2013-12-12 2015-06-18 Sandisk Technologies Inc. System and method of storing data at a non-volatile memory
US9691452B2 (en) 2014-08-15 2017-06-27 Micron Technology, Inc. Apparatuses and methods for concurrently accessing different memory planes of a memory
KR102295208B1 (ko) 2014-12-19 2021-09-01 삼성전자주식회사 프로그램 영역을 동적으로 할당하는 저장 장치 및 그것의 프로그램 방법
US10061516B2 (en) * 2015-09-25 2018-08-28 Intel Corporation Methods and apparatus to configure performance of a solid state drive based on host write bandwidth
TWI603193B (zh) * 2016-03-31 2017-10-21 慧榮科技股份有限公司 資料儲存裝置及其資料維護方法
US9792995B1 (en) 2016-04-26 2017-10-17 Sandisk Technologies Llc Independent multi-plane read and low latency hybrid read
CN106502594A (zh) * 2016-10-31 2017-03-15 维沃移动通信有限公司 一种数据处理方法及终端
KR102369402B1 (ko) * 2017-09-20 2022-03-02 삼성전자주식회사 스토리지 장치, 이의 동작 방법 및 스토리지 장치를 포함하는 스토리지 시스템
CN111930300B (zh) * 2020-06-28 2024-07-30 深圳佰维存储科技股份有限公司 数据写入方法、装置、计算机可读存储介质及电子设备
CN111897489B (zh) * 2020-06-28 2023-06-13 深圳佰维存储科技股份有限公司 数据写入方法、装置、设备及计算机可读存储介质
US11972143B2 (en) * 2021-04-05 2024-04-30 Apple Inc. Techniques for balancing write commands on solid state storage devices (SSDs)

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243701A (en) * 1987-09-17 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Method of and system for processing data having bit length variable with modes of operation
JPH02148148A (ja) * 1988-11-29 1990-06-07 Fanuc Ltd メモリ回路
JPH0636550A (ja) * 1992-07-21 1994-02-10 Hitachi Ltd 半導体記憶装置
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays
JPH08194643A (ja) * 1995-01-19 1996-07-30 Fanuc Ltd メモリ制御方式
US5671388A (en) * 1995-05-03 1997-09-23 Intel Corporation Method and apparatus for performing write operations in multi-level cell storage device
JPH08328949A (ja) * 1995-06-06 1996-12-13 Mitsubishi Electric Corp 記憶装置
KR100205240B1 (ko) 1996-09-13 1999-07-01 윤종용 단일 비트 및 다중 비트 셀들이 장착된 불휘발성 반도체 메모리 장치
JP3688835B2 (ja) * 1996-12-26 2005-08-31 株式会社東芝 データ記憶システム及び同システムに適用するデータ転送方法
JPH1131102A (ja) * 1997-07-14 1999-02-02 Toshiba Corp データ記憶システム及び同システムに適用するアクセス制御方法
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US7243185B2 (en) * 2004-04-05 2007-07-10 Super Talent Electronics, Inc. Flash memory system with a high-speed flash controller
US20080071973A1 (en) * 2000-01-06 2008-03-20 Chow David Q Electronic data flash card with various flash memory cells
JP4282197B2 (ja) * 2000-01-24 2009-06-17 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6297988B1 (en) 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
JP2001306393A (ja) * 2000-04-20 2001-11-02 Mitsubishi Electric Corp 記憶装置
US6901541B2 (en) * 2001-03-13 2005-05-31 Micron Technology, Inc. Memory testing method and apparatus
JP2002351741A (ja) * 2001-05-30 2002-12-06 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JP2003022687A (ja) 2001-07-09 2003-01-24 Mitsubishi Electric Corp 半導体記憶装置
US6807106B2 (en) 2001-12-14 2004-10-19 Sandisk Corporation Hybrid density memory card
JP2005092923A (ja) * 2003-09-12 2005-04-07 Renesas Technology Corp 半導体記憶装置
JP4270994B2 (ja) 2003-09-29 2009-06-03 株式会社東芝 不揮発性半導体記憶装置
US7212436B2 (en) * 2005-02-28 2007-05-01 Micron Technology, Inc. Multiple level programming in a non-volatile memory device
US7822912B2 (en) * 2005-03-14 2010-10-26 Phision Electronics Corp. Flash storage chip and flash array storage system
US7627712B2 (en) * 2005-03-22 2009-12-01 Sigmatel, Inc. Method and system for managing multi-plane memory devices
US8291295B2 (en) * 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface

Also Published As

Publication number Publication date
KR101162739B1 (ko) 2012-07-05
US8521945B2 (en) 2013-08-27
CN101273413B (zh) 2011-11-16
US20080215801A1 (en) 2008-09-04
EP1929482A4 (en) 2009-05-27
CN101273413A (zh) 2008-09-24
KR20080048534A (ko) 2008-06-02
WO2007037757A1 (en) 2007-04-05
JP5073667B2 (ja) 2012-11-14
JP2009510594A (ja) 2009-03-12
EP1929482A1 (en) 2008-06-11
EP1929482B1 (en) 2013-06-12

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2160 DE 29/05/2012.