BRPI0811750A2 - Método para produzir um inversor de enriquecimento-empobrecimento, e, inversor - Google Patents
Método para produzir um inversor de enriquecimento-empobrecimento, e, inversorInfo
- Publication number
- BRPI0811750A2 BRPI0811750A2 BRPI0811750-0A2A BRPI0811750A BRPI0811750A2 BR PI0811750 A2 BRPI0811750 A2 BR PI0811750A2 BR PI0811750 A BRPI0811750 A BR PI0811750A BR PI0811750 A2 BRPI0811750 A2 BR PI0811750A2
- Authority
- BR
- Brazil
- Prior art keywords
- inverter
- enrichment
- engagement
- producing
- engagement inverter
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-133039 | 2007-05-18 | ||
| JP2007133039 | 2007-05-18 | ||
| PCT/JP2008/059401 WO2008143304A1 (en) | 2007-05-18 | 2008-05-15 | Inverter manufacturing method and inverter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BRPI0811750A2 true BRPI0811750A2 (pt) | 2014-11-11 |
| BRPI0811750B1 BRPI0811750B1 (pt) | 2018-11-27 |
Family
ID=39731202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0811750-0A BRPI0811750B1 (pt) | 2007-05-18 | 2008-05-15 | método para produzir um inversor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8304298B2 (pt) |
| EP (1) | EP2162920B1 (pt) |
| JP (1) | JP5294651B2 (pt) |
| KR (1) | KR101056678B1 (pt) |
| CN (2) | CN101681927B (pt) |
| BR (1) | BRPI0811750B1 (pt) |
| RU (1) | RU2433504C2 (pt) |
| TW (1) | TWI392060B (pt) |
| WO (1) | WO2008143304A1 (pt) |
Families Citing this family (109)
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| KR101529575B1 (ko) * | 2008-09-10 | 2015-06-29 | 삼성전자주식회사 | 트랜지스터, 이를 포함하는 인버터 및 이들의 제조방법 |
| US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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-
2008
- 2008-02-26 JP JP2008044527A patent/JP5294651B2/ja not_active Expired - Fee Related
- 2008-05-14 TW TW097117638A patent/TWI392060B/zh not_active IP Right Cessation
- 2008-05-15 KR KR1020097025686A patent/KR101056678B1/ko not_active Expired - Fee Related
- 2008-05-15 US US12/597,211 patent/US8304298B2/en active Active
- 2008-05-15 RU RU2009147030/28A patent/RU2433504C2/ru not_active IP Right Cessation
- 2008-05-15 EP EP08764479.5A patent/EP2162920B1/en not_active Not-in-force
- 2008-05-15 BR BRPI0811750-0A patent/BRPI0811750B1/pt not_active IP Right Cessation
- 2008-05-15 CN CN200880015916.7A patent/CN101681927B/zh not_active Expired - Fee Related
- 2008-05-15 WO PCT/JP2008/059401 patent/WO2008143304A1/en not_active Ceased
- 2008-05-15 CN CN201210057047.2A patent/CN102593188B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| RU2433504C2 (ru) | 2011-11-10 |
| TW200908222A (en) | 2009-02-16 |
| KR20100010507A (ko) | 2010-02-01 |
| TWI392060B (zh) | 2013-04-01 |
| US8304298B2 (en) | 2012-11-06 |
| RU2009147030A (ru) | 2011-06-27 |
| US20100085081A1 (en) | 2010-04-08 |
| JP5294651B2 (ja) | 2013-09-18 |
| EP2162920B1 (en) | 2013-09-11 |
| EP2162920A1 (en) | 2010-03-17 |
| CN101681927A (zh) | 2010-03-24 |
| CN102593188A (zh) | 2012-07-18 |
| WO2008143304A1 (en) | 2008-11-27 |
| CN102593188B (zh) | 2015-05-20 |
| JP2009004733A (ja) | 2009-01-08 |
| BRPI0811750B1 (pt) | 2018-11-27 |
| CN101681927B (zh) | 2012-05-02 |
| KR101056678B1 (ko) | 2011-08-12 |
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