BRPI0823194A2 - Arranjo de elementos emissores de luz semicondutores e método em fabricação do mesmo - Google Patents

Arranjo de elementos emissores de luz semicondutores e método em fabricação do mesmo

Info

Publication number
BRPI0823194A2
BRPI0823194A2 BRPI0823194-0A BRPI0823194A BRPI0823194A2 BR PI0823194 A2 BRPI0823194 A2 BR PI0823194A2 BR PI0823194 A BRPI0823194 A BR PI0823194A BR PI0823194 A2 BRPI0823194 A2 BR PI0823194A2
Authority
BR
Brazil
Prior art keywords
arrangement
semiconductor light
emitting elements
emitting
semiconductor
Prior art date
Application number
BRPI0823194-0A
Other languages
English (en)
Inventor
Kenji Hiruma
Shinjiro Hara
Junichi Motohisa
Takashi Fukui
Original Assignee
Univ Hokkaido Nat Univ Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Hokkaido Nat Univ Corp filed Critical Univ Hokkaido Nat Univ Corp
Publication of BRPI0823194A2 publication Critical patent/BRPI0823194A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/817Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
BRPI0823194-0A 2008-10-17 2008-10-17 Arranjo de elementos emissores de luz semicondutores e método em fabricação do mesmo BRPI0823194A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/002956 WO2010044129A1 (ja) 2008-10-17 2008-10-17 半導体発光素子アレー、およびその製造方法

Publications (1)

Publication Number Publication Date
BRPI0823194A2 true BRPI0823194A2 (pt) 2015-06-23

Family

ID=42106307

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0823194-0A BRPI0823194A2 (pt) 2008-10-17 2008-10-17 Arranjo de elementos emissores de luz semicondutores e método em fabricação do mesmo

Country Status (7)

Country Link
US (1) US8519378B2 (pt)
EP (1) EP2357676A4 (pt)
JP (1) JP5211352B2 (pt)
CN (1) CN102187477B (pt)
BR (1) BRPI0823194A2 (pt)
RU (1) RU2469435C1 (pt)
WO (1) WO2010044129A1 (pt)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007001098A1 (en) * 2005-06-25 2007-01-04 Seoul Opto Device Co., Ltd. Nanostructure having a nitride-based quantum well and light emitting diode employing the same
WO2009138374A1 (de) * 2008-05-13 2009-11-19 Siemens Aktiengesellschaft Led-anordnung
TWD138091S1 (zh) * 2009-09-28 2010-12-01 三菱重工業股份有限公司 大型齒輪加工機
JP5812236B2 (ja) * 2010-08-20 2015-11-11 国立大学法人 和歌山大学 光半導体基板及び光源用装置
CN108198749A (zh) * 2010-11-04 2018-06-22 皇家飞利浦电子股份有限公司 基于结晶弛豫结构的固态发光器件
EP3056803B1 (en) * 2011-09-01 2018-06-06 Koito Manufacturing Co., Ltd. Automotive headlamp apparatus
DE102011118273A1 (de) * 2011-11-11 2013-05-16 Forschungsverbund Berlin E.V. Herstellung einer Halbleitereinrichtung mit mindestens einem säulen- oder wandförmigen Halbleiter-Element
FR2983639B1 (fr) * 2011-12-01 2014-07-18 Commissariat Energie Atomique Dispositif optoelectronique comprenant des nanofils de structure coeur/coquille
US8937297B2 (en) 2011-12-02 2015-01-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device including nanowires with a core/shell structure
FR3000294B1 (fr) 2012-12-21 2016-03-04 Aledia Support fonctionnel comprenant des nanofils et des nano-empreintes et procede de fabrication dudit support
KR102022266B1 (ko) * 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US11502219B2 (en) * 2013-03-14 2022-11-15 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
JP6227128B2 (ja) * 2013-06-07 2017-11-08 グロ アーベーGlo Ab マルチカラーled及びその製造方法
FR3011388B1 (fr) * 2013-09-30 2016-11-25 Aledia Dispositif optoelectronique a diodes electroluminescentes
KR102132651B1 (ko) 2013-12-03 2020-07-10 삼성전자주식회사 나노구조 반도체 발광소자
JP6330486B2 (ja) * 2014-05-29 2018-05-30 富士通株式会社 半導体ナノワイヤ光装置及びその製造方法
FR3023066B1 (fr) 2014-06-30 2017-10-27 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes et un circuit de commande
KR102188494B1 (ko) * 2014-07-21 2020-12-09 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
KR102337405B1 (ko) 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
US9620559B2 (en) * 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
WO2016208993A1 (ko) * 2015-06-23 2016-12-29 엘지이노텍 주식회사 발광소자 및 이를 포함하는 표시장치
FR3039880B1 (fr) * 2015-08-07 2019-10-11 Valeo Vision Dispositif d’eclairage et/ou de signalisation pour vehicule automobile
FR3039929B1 (fr) * 2015-08-07 2018-08-10 Valeo Vision Dispositif d’eclairage et/ou de signalisation pour vehicule automobile
FR3041074B1 (fr) * 2015-09-14 2020-01-17 Valeo Vision Module d'eclairage pour vehicule automobile
FR3041144B1 (fr) * 2015-09-14 2019-04-12 Valeo Vision Source lumineuse led comprenant un circuit electronique
FR3041575B1 (fr) * 2015-09-25 2019-05-24 Valeo Vision Dispositif lumineux comprenant une source lumineuse a batonnets avec des zones de couleurs differentes
FR3041576B1 (fr) * 2015-09-25 2019-11-29 Valeo Vision Dispositif et procede permettant de conferer differentes couleurs blanches a un faisceau lumineux
US9887771B2 (en) * 2015-10-23 2018-02-06 International Business Machines Corporation Bandwidth throttling
FR3044470B1 (fr) * 2015-11-30 2018-03-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale
FR3047941B1 (fr) * 2016-02-24 2019-11-29 Valeo Vision Systeme d'eclairage pour l'habitacle d'un vehicule automobile
FR3048066B1 (fr) * 2016-02-24 2018-03-23 Valeo Vision Dispositif lumineux avec une source lumineuse a batonnets lumineux pour differentes fonctions photometriques
FR3048551B1 (fr) * 2016-03-02 2018-05-18 Valeo Vision Source de lumiere a semi-conducteurs pour l'emission et la reception de faisceaux lumineux, et systeme lumineux comportant une telle source
DE102016104616B4 (de) * 2016-03-14 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle
FR3054292B1 (fr) * 2016-07-22 2019-04-05 Valeo Vision Module lumineux de vehicule terrestre
US10480719B2 (en) * 2016-08-16 2019-11-19 King Abdullah University Of Science And Technology Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications
KR102707509B1 (ko) * 2016-12-19 2024-09-23 삼성디스플레이 주식회사 발광장치 및 그의 제조방법
KR102587215B1 (ko) 2016-12-21 2023-10-12 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
US10877217B2 (en) 2017-01-06 2020-12-29 Rockley Photonics Limited Copackaging of asic and silicon photonics
WO2018183843A1 (en) 2017-03-31 2018-10-04 Velodyne Lidar, Inc. Integrated lidar illumination power control
US10734545B2 (en) 2017-06-21 2020-08-04 The Regents Of The University Of Michigan Monolithically integrated InGaN/GaN quantum nanowire devices
FR3068517B1 (fr) * 2017-06-30 2019-08-09 Aledia Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale
EP3662311A1 (en) * 2017-08-01 2020-06-10 Rockley Photonics Limited Module with transmit optical subassembly and receive optical subassembly
US10290768B2 (en) * 2017-09-14 2019-05-14 Globalfoundries Inc. Nanowire formation methods
US11005004B2 (en) 2017-10-20 2021-05-11 Korea Advanced Institute Of Science And Technology Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same
DE102017129319A1 (de) * 2017-12-08 2019-06-13 Osram Opto Semiconductors Gmbh Verfahren zur herstellung von halbleiterlichtquellen und halbleiterlichtquelle
JP6988460B2 (ja) 2017-12-26 2022-01-05 セイコーエプソン株式会社 発光装置、発光装置の製造方法、およびプロジェクター
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
WO2019135494A1 (ko) 2018-01-08 2019-07-11 주식회사 에스오에스랩 라이다 장치
US10591598B2 (en) 2018-01-08 2020-03-17 SOS Lab co., Ltd Lidar device
KR102050599B1 (ko) * 2018-05-14 2019-12-02 주식회사 에스오에스랩 라이다 장치
EP3748701A4 (en) * 2018-07-09 2022-03-02 Seoul Viosys Co., Ltd LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURE THEREOF
US10712434B2 (en) 2018-09-18 2020-07-14 Velodyne Lidar, Inc. Multi-channel LIDAR illumination driver
CN109301045B (zh) * 2018-10-19 2020-07-31 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置
JP7139960B2 (ja) * 2019-01-10 2022-09-21 株式会社デンソー 半導体装置
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
CN121583214A (zh) 2019-01-29 2026-02-27 奥斯兰姆奥普托半导体股份有限两合公司 视频墙、驱动器电路、控制系统及其方法
WO2020229576A2 (de) 2019-05-14 2020-11-19 Osram Opto Semiconductors Gmbh Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für ein opto-elektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
KR20210120106A (ko) 2019-02-11 2021-10-06 오스람 옵토 세미컨덕터스 게엠베하 광전자 부품, 광전자 조립체 및 방법
JP7232464B2 (ja) 2019-03-26 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7232465B2 (ja) * 2019-03-26 2023-03-03 セイコーエプソン株式会社 発光装置およびプロジェクター
FR3094568B1 (fr) 2019-03-29 2022-04-22 Commissariat Energie Atomique Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7604394B2 (ja) 2019-04-23 2024-12-23 エイエムエス-オスラム インターナショナル ゲーエムベーハー Ledモジュール、ledディスプレイモジュール、および当該モジュールを製造する方法
KR102947058B1 (ko) 2019-05-13 2026-04-01 에이엠에스-오스람 인터내셔널 게엠베하 다중 칩 캐리어 구조체
WO2020233873A1 (de) 2019-05-23 2020-11-26 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung, lichtführungsanordnung und verfahren
FR3098019B1 (fr) * 2019-06-25 2022-05-20 Aledia Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication
FR3098993B1 (fr) * 2019-07-15 2024-10-25 Aledia Dispositif optoélectronique comportant des diodes électroluminescentes multicolores et son procédé de fabrication
GB201910170D0 (en) * 2019-07-16 2019-08-28 Crayonano As Nanowire device
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
WO2021021415A1 (en) * 2019-07-28 2021-02-04 Applied Materials, Inc. Micro-led and micro-led manufacturing method
KR102281886B1 (ko) 2019-09-05 2021-07-26 주식회사 에스오에스랩 라이다 장치
CN114730824A (zh) 2019-09-20 2022-07-08 奥斯兰姆奥普托半导体股份有限两合公司 光电组件、半导体结构和方法
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter
CN114503380A (zh) 2019-10-15 2022-05-13 密歇根大学董事会 纳米晶体表面发射激光器
TWI712180B (zh) 2019-10-22 2020-12-01 錼創顯示科技股份有限公司 微型發光二極體晶粒及微型發光二極體晶圓
CN110707191B (zh) * 2019-10-22 2021-11-16 錼创显示科技股份有限公司 微型发光二极管晶粒及微型发光二极管晶圆
RU198454U1 (ru) * 2019-11-29 2020-07-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Оптический интегральный чип с элементом для ввода излучения в волновод
US11094782B1 (en) * 2020-02-19 2021-08-17 Intel Corporation Gate-all-around integrated circuit structures having depopulated channel structures
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer
JP7613134B2 (ja) * 2021-01-28 2025-01-15 セイコーエプソン株式会社 発光装置、プロジェクター
JP7760879B2 (ja) * 2021-09-29 2025-10-28 セイコーエプソン株式会社 発光装置、プロジェクター及びディスプレイ
US12615890B2 (en) 2021-11-15 2026-04-28 Samsung Display Co., Ltd. Display device with light emitting elements having different widths
US20250169260A1 (en) * 2022-01-26 2025-05-22 Ams-Osram International Gmbh Method for producing an array of light emitting elements and display
EP4497160A1 (en) * 2022-03-21 2025-01-29 Ams-Osram International Gmbh Optoelectronic component and method for producing an optoelectronic component
JP7831048B2 (ja) * 2022-03-22 2026-03-17 セイコーエプソン株式会社 発光装置、プロジェクター、ディスプレイ、およびヘッドマウントディスプレイ
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181303B2 (ja) 1990-04-20 2001-07-03 株式会社日立製作所 発光素子
JPH05251738A (ja) 1992-03-05 1993-09-28 Fujitsu Ltd 半導体光素子アレイの作製方法
JP2910023B2 (ja) 1993-12-24 1999-06-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2953392B2 (ja) * 1996-08-27 1999-09-27 日本電気株式会社 面発光素子を用いた波長多重伝送方式
JPH10233559A (ja) 1997-02-20 1998-09-02 Canon Inc 半導体レーザ装置、その作製方法およびそれを用いた光通信方式
JPH112611A (ja) * 1997-06-11 1999-01-06 Hitachi Ltd シート状部材の製造方法およびシート状部材の検査方法およびシート状部材の欠陥検査装置
US20020028390A1 (en) 1997-09-22 2002-03-07 Mohammad A. Mazed Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
JP3906654B2 (ja) 2000-07-18 2007-04-18 ソニー株式会社 半導体発光素子及び半導体発光装置
JP4797257B2 (ja) * 2001-02-22 2011-10-19 ソニー株式会社 半導体素子の作製方法
US7088321B1 (en) 2001-03-30 2006-08-08 Infocus Corporation Method and apparatus for driving LED light sources for a projection display
JP2003158296A (ja) 2001-11-22 2003-05-30 Sharp Corp 窒化物半導体発光デバイスチップとその製造方法
JP4307113B2 (ja) 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
KR100697803B1 (ko) * 2002-08-29 2007-03-20 시로 사카이 복수의 발광 소자를 갖는 발광 장치
US7122827B2 (en) 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US7601941B2 (en) * 2004-11-30 2009-10-13 National University Corporation NARA Institute of Science and Technology Method and apparatus for evaluating solar cell and use thereof
US7202173B2 (en) * 2004-12-20 2007-04-10 Palo Alto Research Corporation Incorporated Systems and methods for electrical contacts to arrays of vertically aligned nanorods
KR100612894B1 (ko) * 2005-05-02 2006-08-14 삼성전자주식회사 나노와이어 소자 및 그 제조방법
WO2007001098A1 (en) * 2005-06-25 2007-01-04 Seoul Opto Device Co., Ltd. Nanostructure having a nitride-based quantum well and light emitting diode employing the same
JP4552828B2 (ja) * 2005-10-26 2010-09-29 パナソニック電工株式会社 半導体発光素子の製造方法
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
US7847237B2 (en) * 2006-05-02 2010-12-07 National University Corporation Nara Method and apparatus for testing and evaluating performance of a solar cell
JP4915991B2 (ja) * 2006-07-20 2012-04-11 独立行政法人 宇宙航空研究開発機構 太陽電池の欠陥検査装置及びその方法
US20080149946A1 (en) 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
JP4982176B2 (ja) * 2006-12-28 2012-07-25 パナソニック株式会社 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法

Also Published As

Publication number Publication date
US20110204327A1 (en) 2011-08-25
WO2010044129A1 (ja) 2010-04-22
CN102187477A (zh) 2011-09-14
EP2357676A1 (en) 2011-08-17
CN102187477B (zh) 2014-09-24
US8519378B2 (en) 2013-08-27
RU2469435C1 (ru) 2012-12-10
JPWO2010044129A1 (ja) 2012-03-08
EP2357676A4 (en) 2013-05-29
JP5211352B2 (ja) 2013-06-12

Similar Documents

Publication Publication Date Title
BRPI0823194A2 (pt) Arranjo de elementos emissores de luz semicondutores e método em fabricação do mesmo
BRPI0907231A2 (pt) pirrolpirimidinas e pirrolpiridinas
BRPI0920284A2 (pt) composição e método
DE112009000253B8 (de) Halbleitervorrichtung
BRPI0913227A2 (pt) método, e objeto
BRPI0923090A2 (pt) método implementado por computador
EP2298731A4 (en) AMIDE COMPOUND
BRPI0913042A2 (pt) dispositivos de iluminação e respectivos métodos de fabrico
EP2494594A4 (en) SEMICONDUCTOR DEVICE
EP2477238A4 (en) SEMICONDUCTOR LUMINESCENT ELEMENT
EP2266026A4 (en) EFFICIENT DETERMINIST MULTIPLE PROCESSING
BR112012011910A2 (pt) dispositivo e método
EP2303378A4 (en) INTERFACE
BRPI0907109A2 (pt) lenço dental e método
BRPI1006537A2 (pt) método e artigo
EP2287453A4 (en) EXHAUST TREATMENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
PT2356462T (pt) Composições e métodos anti-cxcr1
EP2442355A4 (en) SEMICONDUCTOR DEVICE
EP2486593A4 (en) Semiconductor device and manufacturing method thereof
BRPI0814876A2 (pt) Análogos de pirona fosforilados e métodos
BRPI0915849A2 (pt) disposição de vedação e método de vedação
NO20080778L (no) Kraftelementarrangement og -fremgangsmate
EP2242145A4 (en) Terminal joining structure and terminal joining method
BRPI0920681A2 (pt) inibidores de decahidro-1h-indenoquinolinona e decahidro-3h-ciclopentafenantridinona de cyp17
FI20095627L (fi) Valoa emittoiva puolijohdelaite ja valmistusmenetelmä

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2329 DE 25-08-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B25B Requested transfer of rights rejected

Owner name: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSIT