BRPI0920038A2 - dispositivo semicondutor, processo para manufatura do mesmo e dispositivo visor. - Google Patents

dispositivo semicondutor, processo para manufatura do mesmo e dispositivo visor.

Info

Publication number
BRPI0920038A2
BRPI0920038A2 BRPI0920038A BRPI0920038A BRPI0920038A2 BR PI0920038 A2 BRPI0920038 A2 BR PI0920038A2 BR PI0920038 A BRPI0920038 A BR PI0920038A BR PI0920038 A BRPI0920038 A BR PI0920038A BR PI0920038 A2 BRPI0920038 A2 BR PI0920038A2
Authority
BR
Brazil
Prior art keywords
manufacture
display device
semiconductor device
semiconductor
display
Prior art date
Application number
BRPI0920038A
Other languages
English (en)
Inventor
Nakatsuji Hiroshi
Makita Naoki
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BRPI0920038A2 publication Critical patent/BRPI0920038A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/10—Intensity circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
BRPI0920038A 2008-10-23 2009-10-20 dispositivo semicondutor, processo para manufatura do mesmo e dispositivo visor. BRPI0920038A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008273525 2008-10-23
PCT/JP2009/005478 WO2010047086A1 (ja) 2008-10-23 2009-10-20 半導体装置およびその製造方法ならびに表示装置

Publications (1)

Publication Number Publication Date
BRPI0920038A2 true BRPI0920038A2 (pt) 2019-09-24

Family

ID=42119141

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0920038A BRPI0920038A2 (pt) 2008-10-23 2009-10-20 dispositivo semicondutor, processo para manufatura do mesmo e dispositivo visor.

Country Status (7)

Country Link
US (1) US8999823B2 (pt)
EP (1) EP2352169B1 (pt)
JP (1) JP5314040B2 (pt)
CN (1) CN102197485B (pt)
BR (1) BRPI0920038A2 (pt)
RU (1) RU2471265C1 (pt)
WO (1) WO2010047086A1 (pt)

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WO2010084725A1 (ja) * 2009-01-23 2010-07-29 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
KR20130023021A (ko) * 2010-06-21 2013-03-07 파나소닉 주식회사 실리콘 박막의 결정화 방법 및 실리콘 ｔｆｔ 장치의 제조 방법
US20120092127A1 (en) 2010-10-18 2012-04-19 Qualcomm Mems Technologies, Inc. Multifunctional input device for authentication and security applications
JPWO2012063436A1 (ja) * 2010-11-10 2014-05-12 シャープ株式会社 表示装置用基板及び表示装置
WO2012077606A1 (ja) * 2010-12-07 2012-06-14 シャープ株式会社 液晶パネル
US9024910B2 (en) 2012-04-23 2015-05-05 Qualcomm Mems Technologies, Inc. Touchscreen with bridged force-sensitive resistors
KR102044463B1 (ko) * 2012-12-06 2019-12-02 엘지전자 주식회사 태양 전지 및 그의 제조 방법
KR102034071B1 (ko) * 2013-03-26 2019-10-18 엘지디스플레이 주식회사 폴리 실리콘 박막트랜지스터를 포함하는 유기발광 디스플레이 장치 및 이의 제조방법
KR102072077B1 (ko) 2013-04-15 2020-02-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6403377B2 (ja) * 2013-11-19 2018-10-10 株式会社ジャパンディスプレイ 多結晶化方法
CN103715267A (zh) * 2013-12-30 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管、tft阵列基板及其制造方法和显示装置
KR102060377B1 (ko) * 2014-01-27 2020-02-11 한국전자통신연구원 디스플레이 소자, 그 제조 방법, 및 이미지 센서 소자의 제조방법
CN104538354B (zh) * 2014-12-31 2018-01-09 深圳市华星光电技术有限公司 一种ltps tft像素单元及其制造方法
CN105633095A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种阵列基板及显示面板
JP6477592B2 (ja) * 2016-05-13 2019-03-06 株式会社村田製作所 セラミックコア、巻線型電子部品及びセラミックコアの製造方法
CN108878537B (zh) * 2017-05-12 2021-02-12 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示面板和显示装置
CN107768310B (zh) 2017-10-20 2020-07-14 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板及指纹识别器件
JP6603831B1 (ja) * 2018-04-11 2019-11-06 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
CN110085652B (zh) * 2019-05-27 2020-10-13 武汉华星光电半导体显示技术有限公司 Oled基板
KR102697325B1 (ko) * 2019-07-26 2024-08-26 삼성디스플레이 주식회사 광 센서, 광 센서의 제조 방법 및 광 센서를 포함하는 표시 장치

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JPS6327066A (ja) 1986-07-18 1988-02-04 Sanyo Electric Co Ltd ダイヤフラム型圧力センサの製造方法
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JPH09199752A (ja) * 1996-01-22 1997-07-31 Canon Inc 光電変換装置及び画像読取装置
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KR100669270B1 (ko) * 2003-08-25 2007-01-16 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 표시 장치 및 광전 변환 소자
JP4737956B2 (ja) * 2003-08-25 2011-08-03 東芝モバイルディスプレイ株式会社 表示装置および光電変換素子
JP4570028B2 (ja) 2004-06-03 2010-10-27 株式会社アルバック ポリシリコンパターンの形成方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
US7863660B2 (en) 2005-05-31 2011-01-04 Sharp Kabushiki Kaisha Photodiode and display device
US20070262311A1 (en) * 2006-05-11 2007-11-15 Toppoly Optoelectronics Corp. Flat panel display and fabrication method and thereof
KR100841372B1 (ko) * 2006-12-19 2008-06-26 삼성에스디아이 주식회사 박막트랜지스터 및 이의 제조방법
JP2007288159A (ja) 2007-03-12 2007-11-01 Trustees Of Columbia Univ In The City Of New York 逐次的横方向結晶化法による処理中及び処理後のシリコンフィルムの表面平坦化法
US8334536B2 (en) * 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same
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US8227808B2 (en) * 2007-12-06 2012-07-24 Chimei Innolux Corporation Method for manufacturing thin film transistor (TFT) and OLED display having TFTS manufactured by the same

Also Published As

Publication number Publication date
JPWO2010047086A1 (ja) 2012-03-22
CN102197485B (zh) 2013-07-17
US20110261019A1 (en) 2011-10-27
EP2352169A4 (en) 2013-05-15
US8999823B2 (en) 2015-04-07
EP2352169A1 (en) 2011-08-03
EP2352169B1 (en) 2017-05-17
RU2471265C1 (ru) 2012-12-27
WO2010047086A1 (ja) 2010-04-29
CN102197485A (zh) 2011-09-21
RU2011120336A (ru) 2012-11-27
JP5314040B2 (ja) 2013-10-16

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.