BRPI0921984A2 - camada semicondutora e método para fabricar a mesma - Google Patents
camada semicondutora e método para fabricar a mesmaInfo
- Publication number
- BRPI0921984A2 BRPI0921984A2 BRPI0921984A BRPI0921984A BRPI0921984A2 BR PI0921984 A2 BRPI0921984 A2 BR PI0921984A2 BR PI0921984 A BRPI0921984 A BR PI0921984A BR PI0921984 A BRPI0921984 A BR PI0921984A BR PI0921984 A2 BRPI0921984 A2 BR PI0921984A2
- Authority
- BR
- Brazil
- Prior art keywords
- manufacture
- same
- semiconductor layer
- semiconductor
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4083—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008297296 | 2008-11-20 | ||
| PCT/JP2009/005824 WO2010058528A1 (ja) | 2008-11-20 | 2009-11-02 | 半導体層およびその形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0921984A2 true BRPI0921984A2 (pt) | 2016-01-05 |
Family
ID=42197971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0921984A BRPI0921984A2 (pt) | 2008-11-20 | 2009-11-02 | camada semicondutora e método para fabricar a mesma |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8415673B2 (pt) |
| EP (1) | EP2357672A1 (pt) |
| JP (1) | JPWO2010058528A1 (pt) |
| CN (1) | CN102217075A (pt) |
| BR (1) | BRPI0921984A2 (pt) |
| RU (1) | RU2011124916A (pt) |
| WO (1) | WO2010058528A1 (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI538215B (zh) * | 2011-03-25 | 2016-06-11 | 半導體能源研究所股份有限公司 | 場效電晶體及包含該場效電晶體之記憶體與半導體電路 |
| WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9166006B1 (en) * | 2013-12-08 | 2015-10-20 | Iman Rezanezhad Gatabi | Methods to improve the performance of compound semiconductor devices and field effect transistors |
| TWI577031B (zh) * | 2014-11-04 | 2017-04-01 | 群創光電股份有限公司 | 顯示裝置 |
| KR20180123028A (ko) * | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| CN117457723A (zh) * | 2023-10-09 | 2024-01-26 | 武汉华星光电技术有限公司 | 晶体管、驱动基板及显示面板 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02122628A (ja) * | 1988-11-01 | 1990-05-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2717739B2 (ja) | 1991-03-01 | 1998-02-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH06132303A (ja) * | 1991-11-29 | 1994-05-13 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
| JPH07211697A (ja) * | 1994-01-19 | 1995-08-11 | Fujitsu Ltd | 金属配線形成方法及び半導体装置の製造方法 |
| US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
| JP4776801B2 (ja) * | 2001-04-24 | 2011-09-21 | 株式会社半導体エネルギー研究所 | メモリ回路 |
| JP4626410B2 (ja) * | 2005-06-06 | 2011-02-09 | セイコーエプソン株式会社 | 半導体装置および半導体装置の製造方法 |
| US8035103B2 (en) | 2005-08-11 | 2011-10-11 | Sharp Kabushiki Kaisha | Circuit board, electronic device, and method for producing circuit board |
| JP2007142287A (ja) * | 2005-11-21 | 2007-06-07 | Sharp Corp | 回路素子、半導体装置、表示装置及び回路素子の製造方法 |
| JP4793082B2 (ja) | 2006-04-28 | 2011-10-12 | コニカミノルタオプト株式会社 | ロール状反射型偏光素子、ロール状反射吸収一体型偏光素子、ロール状視野角拡大反射吸収一体型偏光素子及びロール状位相差補償反射吸収一体型偏光素子の製造方法 |
| KR101226974B1 (ko) | 2006-05-03 | 2013-01-28 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조 방법 |
| JP2008297296A (ja) | 2007-06-04 | 2008-12-11 | Hoyu Co Ltd | 毛髪処理用組成物 |
-
2009
- 2009-11-02 EP EP09827309A patent/EP2357672A1/en not_active Withdrawn
- 2009-11-02 BR BRPI0921984A patent/BRPI0921984A2/pt not_active IP Right Cessation
- 2009-11-02 WO PCT/JP2009/005824 patent/WO2010058528A1/ja not_active Ceased
- 2009-11-02 US US13/130,141 patent/US8415673B2/en active Active
- 2009-11-02 JP JP2010539124A patent/JPWO2010058528A1/ja active Pending
- 2009-11-02 RU RU2011124916/28A patent/RU2011124916A/ru not_active Application Discontinuation
- 2009-11-02 CN CN2009801461110A patent/CN102217075A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| RU2011124916A (ru) | 2012-12-27 |
| EP2357672A1 (en) | 2011-08-17 |
| JPWO2010058528A1 (ja) | 2012-04-19 |
| WO2010058528A1 (ja) | 2010-05-27 |
| CN102217075A (zh) | 2011-10-12 |
| US20110220894A1 (en) | 2011-09-15 |
| US8415673B2 (en) | 2013-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE AS 5A, 6A E 7A ANUIDADES. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |