BRPI0922977A2 - forno de fusão-solidificaçã ocomportando uma modulação das trocas térmicas pelas paredes laterais - Google Patents

forno de fusão-solidificaçã ocomportando uma modulação das trocas térmicas pelas paredes laterais

Info

Publication number
BRPI0922977A2
BRPI0922977A2 BRPI0922977A BRPI0922977A BRPI0922977A2 BR PI0922977 A2 BRPI0922977 A2 BR PI0922977A2 BR PI0922977 A BRPI0922977 A BR PI0922977A BR PI0922977 A BRPI0922977 A BR PI0922977A BR PI0922977 A2 BRPI0922977 A2 BR PI0922977A2
Authority
BR
Brazil
Prior art keywords
modulation
melt
heat exchange
side walls
solidification furnace
Prior art date
Application number
BRPI0922977A
Other languages
English (en)
Inventor
David Pelletier
Jean-Paul Grandet
Original Assignee
Commisariat A L En Atomique Et Aux En Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commisariat A L En Atomique Et Aux En Alternatives filed Critical Commisariat A L En Atomique Et Aux En Alternatives
Publication of BRPI0922977A2 publication Critical patent/BRPI0922977A2/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
BRPI0922977A 2008-12-19 2009-12-04 forno de fusão-solidificaçã ocomportando uma modulação das trocas térmicas pelas paredes laterais BRPI0922977A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0807241A FR2940327B1 (fr) 2008-12-19 2008-12-19 Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales
PCT/EP2009/066393 WO2010069784A1 (fr) 2008-12-19 2009-12-04 Four de fusion-solidification comportant une modulation des échanges thermiques par les parois latérales

Publications (1)

Publication Number Publication Date
BRPI0922977A2 true BRPI0922977A2 (pt) 2016-01-26

Family

ID=41092050

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0922977A BRPI0922977A2 (pt) 2008-12-19 2009-12-04 forno de fusão-solidificaçã ocomportando uma modulação das trocas térmicas pelas paredes laterais

Country Status (13)

Country Link
US (1) US9127373B2 (pt)
EP (1) EP2376679B1 (pt)
JP (1) JP2012512797A (pt)
KR (1) KR101699987B1 (pt)
CN (1) CN102257188B (pt)
BR (1) BRPI0922977A2 (pt)
CA (1) CA2743543C (pt)
EA (1) EA019628B1 (pt)
ES (1) ES2404825T3 (pt)
FR (1) FR2940327B1 (pt)
PL (1) PL2376679T3 (pt)
WO (1) WO2010069784A1 (pt)
ZA (1) ZA201103451B (pt)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces
CN102181655B (zh) * 2011-04-11 2012-11-07 江西稀有金属钨业控股集团有限公司 一种钽材质多级蒸馏坩埚和蒸馏工艺
TWI432617B (zh) * 2011-07-12 2014-04-01 Sino American Silicon Prod Inc 長晶裝置
CN103797164A (zh) * 2011-09-14 2014-05-14 Memc新加坡私人有限公司 具有可移动式热交换器的定向固化炉
WO2013040246A1 (en) * 2011-09-14 2013-03-21 Memc Singapore Pte, Ltd. Directional solidification furnace having movable insulation system
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
FR2985722B1 (fr) * 2012-01-13 2014-02-14 Commissariat Energie Atomique Procede de purification du silicium.
US9273411B2 (en) * 2012-11-02 2016-03-01 Gtat Corporation Growth determination in the solidification of a crystalline material
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
KR102319998B1 (ko) * 2015-01-22 2021-11-01 삼성디스플레이 주식회사 볼륨 가변형 도가니를 구비한 증착원
US10458014B2 (en) * 2015-03-24 2019-10-29 Siva Power, Inc. Thin-film deposition methods with thermal management of evaporation sources
CN108534193A (zh) * 2018-05-09 2018-09-14 浙江厨壹堂厨房电器股份有限公司 一种集成灶中的燃气接管
JP7186534B2 (ja) * 2018-07-25 2022-12-09 昭和電工株式会社 結晶成長装置
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143039U (ja) * 1983-03-11 1984-09-25 富士通株式会社 加熱炉
FR2553232B1 (fr) 1983-10-05 1985-12-27 Comp Generale Electricite Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin
JP2870795B2 (ja) * 1989-04-27 1999-03-17 東芝セラミックス株式会社 縦型熱処理炉
JP2734820B2 (ja) * 1991-07-16 1998-04-02 株式会社神戸製鋼所 化合物半導体単結晶の製造方法
JPH07242487A (ja) * 1994-03-01 1995-09-19 Hitachi Cable Ltd 化合物半導体単結晶製造装置
FR2741633B1 (fr) * 1995-11-23 1997-12-19 Commissariat Energie Atomique Four de cristallisation pour materiau a faible conductivite thermique et/ou faible durete
JP4657465B2 (ja) * 2001-02-09 2011-03-23 古河機械金属株式会社 金属の精製方法
JP2004010461A (ja) * 2002-06-11 2004-01-15 Canon Inc 結晶製造装置および結晶製造方法
AU2003284253A1 (en) * 2002-10-18 2004-05-04 Evergreen Solar, Inc. Method and apparatus for crystal growth
JP4777880B2 (ja) * 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
FR2869028B1 (fr) 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing

Also Published As

Publication number Publication date
EA201170842A1 (ru) 2011-12-30
EP2376679B1 (fr) 2013-03-27
EA019628B1 (ru) 2014-05-30
FR2940327A1 (fr) 2010-06-25
CN102257188B (zh) 2014-07-30
PL2376679T3 (pl) 2013-08-30
FR2940327B1 (fr) 2011-02-11
WO2010069784A1 (fr) 2010-06-24
EP2376679A1 (fr) 2011-10-19
ES2404825T3 (es) 2013-05-29
US20110259316A1 (en) 2011-10-27
CN102257188A (zh) 2011-11-23
KR20110106304A (ko) 2011-09-28
JP2012512797A (ja) 2012-06-07
CA2743543C (fr) 2016-05-17
KR101699987B1 (ko) 2017-01-26
ZA201103451B (en) 2012-01-25
US9127373B2 (en) 2015-09-08
CA2743543A1 (fr) 2010-06-24

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]

Free format text: O DEPOSITANTE DEVE RESPONDER A EXIGENCIA FORMULADA NESTE PARECER EM ATE 60 (SESSENTA) DIAS, A PARTIR DA DATA DE PUBLICACAO NA RPI, SOB PENA DO ARQUIVAMENTO DO PEDIDO, DE ACORDO COM O ARTIGO 34, INCISO II, DA LPI, POR MEIO DO SERVICO DE CODIGO 206.PUBLIQUE-SE A EXIGENCIA (6.20).

B11E Dismissal acc. art. 34 of ipl - requirements for examination incomplete
B11T Dismissal of application maintained [chapter 11.20 patent gazette]