CA1053545A - Non-crucible zone-melting of a semi-conductor - Google Patents

Non-crucible zone-melting of a semi-conductor

Info

Publication number: CA1053545A
Authority: CA; Canada
Prior art keywords: rod; semi; funnel; conductor; seed crystal
Prior art date: 1973-11-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA214,337A

Other languages

English (en)

French (fr)

Other versions

CA214337S (en

Inventor

Wolfgang Keller

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee

Siemens AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-11-22

Filing date

1974-11-21

Publication date

1979-05-01

1974-11-21 Application filed by Siemens AG filed Critical Siemens AG

1979-05-01 Application granted granted Critical

1979-05-01 Publication of CA1053545A publication Critical patent/CA1053545A/en

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 34
238000004857 zone melting Methods 0.000 title claims abstract description 13
239000013078 crystal Substances 0.000 claims abstract description 56
229910052710 silicon Inorganic materials 0.000 claims description 16
239000010703 silicon Substances 0.000 claims description 16
229910052751 metal Inorganic materials 0.000 claims description 9
239000002184 metal Substances 0.000 claims description 9
239000006004 Quartz sand Substances 0.000 claims description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
229910052782 aluminium Inorganic materials 0.000 claims description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical class [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
229910052738 indium Inorganic materials 0.000 claims description 4
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
239000000374 eutectic mixture Substances 0.000 claims description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
229910000831 Steel Inorganic materials 0.000 claims description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
229910002804 graphite Inorganic materials 0.000 claims description 2
239000010439 graphite Substances 0.000 claims description 2
239000010959 steel Substances 0.000 claims description 2
239000010936 titanium Substances 0.000 claims description 2
229910052719 titanium Inorganic materials 0.000 claims description 2
150000002739 metals Chemical class 0.000 claims 1
238000000034 method Methods 0.000 abstract description 8
239000000945 filler Substances 0.000 abstract description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
239000000155 melt Substances 0.000 description 5
238000010438 heat treatment Methods 0.000 description 4
239000000463 material Substances 0.000 description 4
238000002844 melting Methods 0.000 description 4
230000008018 melting Effects 0.000 description 4
206010023204 Joint dislocation Diseases 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000002411 adverse Effects 0.000 description 1
238000005275 alloying Methods 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000007689 inspection Methods 0.000 description 1
230000007775 late Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
229910001338 liquidmetal Inorganic materials 0.000 description 1
230000003405 preventing effect Effects 0.000 description 1
239000003381 stabilizer Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000007704 transition Effects 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Engine Equipment That Uses Special Cycles (AREA)

CA214,337A 1973-11-22 1974-11-21 Non-crucible zone-melting of a semi-conductor Expired CA1053545A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2358300A DE2358300C3 (de)	1973-11-22	1973-11-22	Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number	Publication Date
CA1053545A true CA1053545A (en)	1979-05-01

Family

ID=5898815

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA214,337A Expired CA1053545A (en)	1973-11-22	1974-11-21	Non-crucible zone-melting of a semi-conductor

Country Status (7)

Country	Link
US (2)	US3923468A (pl)
JP (1)	JPS5337803B2 (pl)
BE (1)	BE816506A (pl)
CA (1)	CA1053545A (pl)
DE (1)	DE2358300C3 (pl)
IT (1)	IT1025571B (pl)
PL (1)	PL95739B1 (pl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4045278A (en) *	1973-11-22	1977-08-30	Siemens Aktiengesellschaft	Method and apparatus for floating melt zone of semiconductor crystal rods
DE2455173C3 (de) *	1974-11-21	1979-01-18	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
DE2529366A1 (de) *	1975-07-01	1977-01-20	Wacker Chemitronic	Vorrichtung zum stuetzen eines kristallinen stabes
DE2652199C3 (de) *	1976-11-16	1982-05-19	Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen	Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen
JP3376877B2 (ja) *	1997-09-02	2003-02-10	信越半導体株式会社	種結晶保持具
DE112017004008B4 (de)	2016-08-10	2021-08-26	Sumco Corporation	Einkristall-Herstellungsverfahren und Vorrichtung
CN112429282B (zh) *	2020-11-10	2022-04-12	常州嘉业智能装备科技有限公司	一种用于多次灌装的漏斗

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2989378A (en) *	1956-10-16	1961-06-20	Int Standard Electric Corp	Producing silicon of high purity
GB848382A (en) *	1957-11-28	1960-09-14	Siemens Ag	Improvements in or relating to the production of mono-crystalline bodies
NL235481A (pl) *	1958-02-19
BE581195A (pl) *	1958-07-30
US3134700A (en) *	1959-04-22	1964-05-26	Siemens Ag	Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3179593A (en) *	1960-09-28	1965-04-20	Siemens Ag	Method for producing monocrystalline semiconductor material
NL260045A (pl) *	1961-01-13
US3159408A (en) *	1961-10-05	1964-12-01	Grace W R & Co	Chuck
BE626374A (pl) *	1961-12-22
DE1519901A1 (de) *	1966-09-23	1970-02-12	Siemens Ag	Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
DE1619993A1 (de) *	1967-03-03	1971-07-01	Siemens Ag	Verfahren zum Zuechten eines stabfoermigen Einkristalls aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
US3494742A (en) *	1968-12-23	1970-02-10	Western Electric Co	Apparatus for float zone melting fusible material
DE2059360A1 (de) *	1970-12-02	1972-06-08	Siemens Ag	Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial

1973
- 1973-11-22 DE DE2358300A patent/DE2358300C3/de not_active Expired
1974
- 1974-06-18 BE BE145571A patent/BE816506A/xx unknown
- 1974-10-21 JP JP12128774A patent/JPS5337803B2/ja not_active Expired
- 1974-11-11 IT IT29278/74A patent/IT1025571B/it active
- 1974-11-18 PL PL1974175723A patent/PL95739B1/pl unknown
- 1974-11-20 US US525641A patent/US3923468A/en not_active Expired - Lifetime
- 1974-11-21 CA CA214,337A patent/CA1053545A/en not_active Expired
1977
- 1977-03-17 US US05/778,587 patent/USRE30863E/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS5084171A (pl)	1975-07-07
JPS5337803B2 (pl)	1978-10-12
US3923468A (en)	1975-12-02
DE2358300C3 (de)	1978-07-20
IT1025571B (it)	1978-08-30
PL95739B1 (pl)	1977-11-30
DE2358300B2 (de)	1977-12-01
USRE30863E (en)	1982-02-09
BE816506A (fr)	1974-10-16
DE2358300A1 (de)	1975-06-05

Publication	Publication Date	Title
US2893847A (en)	1959-07-07	Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US5690733A (en)	1997-11-25	Method for recharging of silicon granules in a Czochralski single crystal growing operation
CA1053545A (en)	1979-05-01	Non-crucible zone-melting of a semi-conductor
JPH06345584A (ja)	1994-12-20	単結晶引上げ方法およびその装置
US5173270A (en)	1992-12-22	Monocrystal rod pulled from a melt
US8337615B2 (en)	2012-12-25	Method for producing a monocrystalline Si wafer having an approximately polygonal cross-section and corresponding monocrystalline Si wafer
KR20200026247A (ko)	2020-03-10	리차지관 및 단결정의 제조방법
EP1722014A1 (en)	2006-11-15	Method for manufacturing nitrogen-doped silicon single crystal
US3961906A (en)	1976-06-08	Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
JP2003089592A (ja)	2003-03-28	単結晶引上げ方法
JP4013324B2 (ja)	2007-11-28	単結晶成長方法
US4045278A (en)	1977-08-30	Method and apparatus for floating melt zone of semiconductor crystal rods
JP7782016B2 (ja)	2025-12-08	単結晶シリコンロッドの製造デバイスおよび製造方法
US3988197A (en)	1976-10-26	Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3996096A (en)	1976-12-07	Method for crucible-free zone melting of semiconductor crystal rods
US3915660A (en)	1975-10-28	Preparing oriented semiconductor monocrystalline rods
USRE29824E (en)	1978-11-07	Apparatus for crucible-free zone melting of semiconductor crystal rods
US3996011A (en)	1976-12-07	Apparatus for crucible-free zone melting of semiconductor crystal rods
US3615262A (en)	1971-10-26	Crystal seed following a hypercycloid path in melt
JP2531415B2 (ja)	1996-09-04	結晶成長方法
USRE29825E (en)	1978-11-07	Apparatus for crucible-free zone melting of semiconductor crystal rods
JP2690419B2 (ja)	1997-12-10	単結晶の育成方法及びその装置
US3989468A (en)	1976-11-02	Apparatus for crucible-free zone melting of semiconductor crystal rods
US3607109A (en)	1971-09-21	Method and means of producing a large diameter single-crystal rod from a polycrystal bar
US4257841A (en)	1981-03-24	Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod