PL95739B1 - Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego - Google Patents

Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego Download PDF

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Publication number
PL95739B1
PL95739B1 PL1974175723A PL17572374A PL95739B1 PL 95739 B1 PL95739 B1 PL 95739B1 PL 1974175723 A PL1974175723 A PL 1974175723A PL 17572374 A PL17572374 A PL 17572374A PL 95739 B1 PL95739 B1 PL 95739B1
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PL
Poland
Prior art keywords
rod
funnel
sleeve
preta
shaped
Prior art date
Application number
PL1974175723A
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English (en)
Chinese (zh)
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of PL95739B1 publication Critical patent/PL95739B1/pl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)

Claims (2)

1. Zastrzezenia patentowe ii. Urzadzenie do beztyglowego topienia strefo¬ wego preta pólprzewodnikowego, w którym do dolniego konca preta pólprzewodnikowego jest przetopiony monokrystaliczny zarodek krysztalu i pret pólprzewodnikowy jest zamocowany' na obu koncach, a po ponownym skrzepnieciu zostaje dodatkowo podparty od strony zarodka w pew¬ nej odleglosci od strefy topienia, znamienne tym, 5 ze ma osiowo przesuwalna i obracalna lejkowata tuleje (7) do zamocowania preta pólprzewodnitoowe- go (4), polaczona z elementem mocujacym (3) zaro¬ dek krysztalu (2), która w siwym najwyzszymi po¬ lozeniu obejmuje czesc stozkowa preta (4) powyzej 10 zarodka krysztalu (2) przy czym tuleja posiada srodki mocujace (4) czesc stozkowa preta. 2. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei (7) stanowi piasek kwarcowy (13,) korzystnie ziarni- 15 sty krzem. 3. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei (7) stanowi zakrzepniety plynny metal, korzystnie 20 'olów lub ind. 4. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei stanowia kulki metalowe o jak najwiekszym upa¬ kowaniu. 25 5. Urzadzenie wedlug zastrz. 1, znamienne tym; ze na górnej krawedzi lejkowatej Itulei (7) umiesz¬ czone sa wkladki (15) z najczystszego metalu, dla utworzenia po stopieniu czescia stozkowa preta (4) stopu ó skladzie eultektyku, tworzacego mocnie po- 30 laczenie. 6. Urzadzenie wedlug zastrz. 5, znamienne tym, ze wkladki (15) stanowia wkladki glinowe. 7. Urzadzenie wedlug zastrz. 1 albo 5, znamienne tym, ze lejkowata tuleja (7) jest umieszczana wy¬ soko przy zamocowaniu, przy czym przesuwajaca sie strefa topienia preta (4) jest oddalona o co najmniej 10 cm od najwyzszego polozenia lejko¬ watej tulei. 40 8. Urzadzenie wedlug zastrz. 7, znamienne tym, ze posiada element (14) wprowadzajacy srodki mo¬ cujace pret (4) do lejkowatej tulei (7). 0. Urzadzenie wedlug zastrz. 1, znamienne tym, ze lejkowata tuleje (7) stanowi tuleja z tytanu 45 lub stali albo z krzemu lub grafitu. 3595739 Fig.1 Fig.
2. Fig.3 \cv&m_—^^ DN-3, zam. 1025/77 Cena 45 zl PL
PL1974175723A 1973-11-22 1974-11-18 Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego PL95739B1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2358300A DE2358300C3 (de) 1973-11-22 1973-11-22 Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
PL95739B1 true PL95739B1 (pl) 1977-11-30

Family

ID=5898815

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1974175723A PL95739B1 (pl) 1973-11-22 1974-11-18 Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego

Country Status (7)

Country Link
US (2) US3923468A (pl)
JP (1) JPS5337803B2 (pl)
BE (1) BE816506A (pl)
CA (1) CA1053545A (pl)
DE (1) DE2358300C3 (pl)
IT (1) IT1025571B (pl)
PL (1) PL95739B1 (pl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
DE2455173C3 (de) * 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
DE2529366A1 (de) * 1975-07-01 1977-01-20 Wacker Chemitronic Vorrichtung zum stuetzen eines kristallinen stabes
DE2652199C3 (de) * 1976-11-16 1982-05-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen
JP3376877B2 (ja) * 1997-09-02 2003-02-10 信越半導体株式会社 種結晶保持具
CN109563637B (zh) 2016-08-10 2021-01-22 胜高股份有限公司 单晶的制造方法和装置
CN112429282B (zh) * 2020-11-10 2022-04-12 常州嘉业智能装备科技有限公司 一种用于多次灌装的漏斗

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
NL126240C (pl) * 1958-02-19
NL240421A (pl) * 1958-07-30
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3179593A (en) * 1960-09-28 1965-04-20 Siemens Ag Method for producing monocrystalline semiconductor material
NL260045A (pl) * 1961-01-13
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
BE626374A (pl) * 1961-12-22
DE1519901A1 (de) * 1966-09-23 1970-02-12 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
DE1619993A1 (de) * 1967-03-03 1971-07-01 Siemens Ag Verfahren zum Zuechten eines stabfoermigen Einkristalls aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
DE2059360A1 (de) * 1970-12-02 1972-06-08 Siemens Ag Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial

Also Published As

Publication number Publication date
DE2358300C3 (de) 1978-07-20
CA1053545A (en) 1979-05-01
IT1025571B (it) 1978-08-30
JPS5084171A (pl) 1975-07-07
JPS5337803B2 (pl) 1978-10-12
BE816506A (fr) 1974-10-16
USRE30863E (en) 1982-02-09
DE2358300B2 (de) 1977-12-01
US3923468A (en) 1975-12-02
DE2358300A1 (de) 1975-06-05

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