JPS5745310B2 - - Google Patents

Info

Publication number: JPS5745310B2
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP52092304A

Other languages

Japanese (ja)

Other versions

JPS5322836A (en

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-08-16

Filing date

1977-08-02

Publication date

1982-09-27

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4106655&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5745310(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1977-08-02 Application filed filed Critical

1978-03-02 Publication of JPS5322836A publication Critical patent/JPS5322836A/ja

1982-09-27 Publication of JPS5745310B2 publication Critical patent/JPS5745310B2/ja

Status Granted legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Drying Of Semiconductors (AREA)
ing And Chemical Polishing (AREA)

JP9230477A 1976-08-16 1977-08-02 Method of etching aluminum and aluminum oxide with gas Granted JPS5322836A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA259,126A CA1059882A (fr)	1976-08-16	1976-08-16	Burinage de l'aluminium et de l'alumine au plasma gazeux

Publications (2)

Publication Number	Publication Date
JPS5322836A JPS5322836A (en)	1978-03-02
JPS5745310B2 true JPS5745310B2 (fr)	1982-09-27

Family

ID=4106655

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP9230477A Granted JPS5322836A (en)	1976-08-16	1977-08-02	Method of etching aluminum and aluminum oxide with gas

Country Status (7)

Country	Link
JP (1)	JPS5322836A (fr)
CA (1)	CA1059882A (fr)
DE (1)	DE2730156C2 (fr)
FR (1)	FR2362216A1 (fr)
GB (1)	GB1554335A (fr)
NL (1)	NL7706627A (fr)
SE (1)	SE7709165L (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54118172A (en) *	1978-03-06	1979-09-13	Nichiden Varian Kk	Method of dry etching aluminum
US4226665A (en) *	1978-07-31	1980-10-07	Bell Telephone Laboratories, Incorporated	Device fabrication by plasma etching
US4256534A (en) *	1978-07-31	1981-03-17	Bell Telephone Laboratories, Incorporated	Device fabrication by plasma etching
US4208241A (en) *	1978-07-31	1980-06-17	Bell Telephone Laboratories, Incorporated	Device fabrication by plasma etching
DE2924475A1 (de) *	1979-06-18	1981-01-15	Siemens Ag	Verfahren zum herstellen einer metallisierung auf einem halbleiterkristall
JPS5623745A (en) *	1979-08-01	1981-03-06	Hitachi Ltd	Plasma etching device
US4341593A (en) *	1979-08-17	1982-07-27	Tokuda Seisakusyo, Ltd.	Plasma etching method for aluminum-based films
JPS5747876A (en) *	1980-09-03	1982-03-18	Toshiba Corp	Plasma etching apparatus and method
DE3103177A1 (de) *	1981-01-30	1982-08-26	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4426246A (en) *	1982-07-26	1984-01-17	Bell Telephone Laboratories, Incorporated	Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
JP2861785B2 (ja) *	1994-02-15	1999-02-24	日本電気株式会社	半導体装置の配線の形成方法
US9520303B2 (en) *	2013-11-12	2016-12-13	Applied Materials, Inc.	Aluminum selective etch

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3615956A (en) *	1969-03-27	1971-10-26	Signetics Corp	Gas plasma vapor etching process
US3757733A (en) *	1971-10-27	1973-09-11	Texas Instruments Inc	Radial flow reactor

1976
- 1976-08-16 CA CA259,126A patent/CA1059882A/fr not_active Expired
1977
- 1977-06-13 GB GB24546/77A patent/GB1554335A/en not_active Expired
- 1977-06-16 NL NL7706627A patent/NL7706627A/xx not_active Application Discontinuation
- 1977-07-04 DE DE2730156A patent/DE2730156C2/de not_active Expired
- 1977-08-02 JP JP9230477A patent/JPS5322836A/ja active Granted
- 1977-08-12 SE SE7709165A patent/SE7709165L/xx unknown
- 1977-08-16 FR FR7725071A patent/FR2362216A1/fr not_active Withdrawn

Also Published As

Publication number	Publication date
CA1059882A (fr)	1979-08-07
DE2730156A1 (de)	1978-02-23
NL7706627A (nl)	1978-02-20
JPS5322836A (en)	1978-03-02
DE2730156C2 (de)	1986-01-16
FR2362216A1 (fr)	1978-03-17
SE7709165L (sv)	1978-02-17
GB1554335A (en)	1979-10-17

Publication	Publication Date	Title
JPS5745310B2 (fr)	1982-09-27
FR2351865B1 (fr)	1983-04-15
JPS5324551B2 (fr)	1978-07-21
JPS5334447B2 (fr)	1978-09-20
JPS52122198U (fr)	1977-09-17
JPS52156473U (fr)	1977-11-28
JPS5714578Y2 (fr)	1982-03-26
JPS5714497Y2 (fr)	1982-03-25
CS178499B1 (fr)	1977-09-15
CS184644B1 (fr)	1978-08-31
JPS5297668U (fr)	1977-07-22
JPS52167907U (fr)	1977-12-20
JPS5346550U (fr)	1978-04-20
JPS52131403U (fr)	1977-10-06
JPS5367145U (fr)	1978-06-06
JPS52148276U (fr)	1977-11-10
CS176987B1 (fr)	1977-07-29
CS178385B1 (fr)	1977-09-15
JPS52125879U (fr)	1977-09-24
JPS5340868U (fr)	1978-04-08
DD127028A1 (fr)	1977-08-31
DD123787A2 (fr)	1977-01-19
DD126870A5 (fr)	1977-08-17
DD126616A2 (fr)	1977-08-03
DD126113A1 (fr)	1977-06-22