CA1086866A - Thyristor a protection entegree contre les defaillances de conduction en recouvrement - Google Patents
Thyristor a protection entegree contre les defaillances de conduction en recouvrementInfo
- Publication number
- CA1086866A CA1086866A CA280,370A CA280370A CA1086866A CA 1086866 A CA1086866 A CA 1086866A CA 280370 A CA280370 A CA 280370A CA 1086866 A CA1086866 A CA 1086866A
- Authority
- CA
- Canada
- Prior art keywords
- region
- gate
- thyristor
- subtransistor
- carrier lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77271277A | 1977-02-28 | 1977-02-28 | |
| US772,712 | 1977-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1086866A true CA1086866A (fr) | 1980-09-30 |
Family
ID=25095976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA280,370A Expired CA1086866A (fr) | 1977-02-28 | 1977-06-13 | Thyristor a protection entegree contre les defaillances de conduction en recouvrement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS53106584A (fr) |
| CA (1) | CA1086866A (fr) |
| DE (1) | DE2738152A1 (fr) |
| GB (1) | GB1588534A (fr) |
| SE (1) | SE7707114L (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3369234D1 (en) * | 1982-11-15 | 1987-02-19 | Toshiba Kk | Thyristor device protected from an overvoltage |
| GB8717695D0 (en) * | 1987-07-25 | 1987-09-03 | Marconi Electronic Devices | Thyristors |
| DE3927899A1 (de) * | 1989-08-24 | 1991-02-28 | Eupec Gmbh & Co Kg | Thyristor und verfahren zu seiner herstellung |
| EP0419898B1 (fr) * | 1989-09-28 | 2000-05-31 | Siemens Aktiengesellschaft | Méthode pour augmenter la tenue en tension d'un dispositif semi-conducteur à plusieurs couches |
| DE10330571B8 (de) * | 2003-07-07 | 2007-03-08 | Infineon Technologies Ag | Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür |
| CN110265510B (zh) * | 2019-07-10 | 2024-04-05 | 兰州大学 | 一种深结雪崩倍增光控晶闸管及其触发控制系统 |
-
1977
- 1977-06-13 CA CA280,370A patent/CA1086866A/fr not_active Expired
- 1977-06-20 SE SE7707114A patent/SE7707114L/xx unknown
- 1977-06-27 GB GB26777/77A patent/GB1588534A/en not_active Expired
- 1977-08-24 DE DE19772738152 patent/DE2738152A1/de not_active Withdrawn
- 1977-09-13 JP JP11041477A patent/JPS53106584A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE7707114L (sv) | 1978-08-29 |
| DE2738152A1 (de) | 1978-08-31 |
| JPS53106584A (en) | 1978-09-16 |
| GB1588534A (en) | 1981-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |