JPS53106584A - Self protection of thyristor break overturn on defect by selective base life control - Google Patents

Self protection of thyristor break overturn on defect by selective base life control

Info

Publication number
JPS53106584A
JPS53106584A JP11041477A JP11041477A JPS53106584A JP S53106584 A JPS53106584 A JP S53106584A JP 11041477 A JP11041477 A JP 11041477A JP 11041477 A JP11041477 A JP 11041477A JP S53106584 A JPS53106584 A JP S53106584A
Authority
JP
Japan
Prior art keywords
overturn
defect
life control
self protection
selective base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11041477A
Other languages
English (en)
Japanese (ja)
Inventor
Ei Kei Tenpuru Bikutaa
Jieianto Bariga Bii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electric Power Research Institute Inc
Original Assignee
Electric Power Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Research Institute Inc filed Critical Electric Power Research Institute Inc
Publication of JPS53106584A publication Critical patent/JPS53106584A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50Physical imperfections
    • H10D62/53Physical imperfections the imperfections being within the semiconductor body 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation

Landscapes

  • Thyristors (AREA)
JP11041477A 1977-02-28 1977-09-13 Self protection of thyristor break overturn on defect by selective base life control Pending JPS53106584A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77271277A 1977-02-28 1977-02-28

Publications (1)

Publication Number Publication Date
JPS53106584A true JPS53106584A (en) 1978-09-16

Family

ID=25095976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11041477A Pending JPS53106584A (en) 1977-02-28 1977-09-13 Self protection of thyristor break overturn on defect by selective base life control

Country Status (5)

Country Link
JP (1) JPS53106584A (fr)
CA (1) CA1086866A (fr)
DE (1) DE2738152A1 (fr)
GB (1) GB1588534A (fr)
SE (1) SE7707114L (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage
GB8717695D0 (en) * 1987-07-25 1987-09-03 Marconi Electronic Devices Thyristors
DE3927899A1 (de) * 1989-08-24 1991-02-28 Eupec Gmbh & Co Kg Thyristor und verfahren zu seiner herstellung
EP0419898B1 (fr) * 1989-09-28 2000-05-31 Siemens Aktiengesellschaft Méthode pour augmenter la tenue en tension d'un dispositif semi-conducteur à plusieurs couches
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
CN110265510B (zh) * 2019-07-10 2024-04-05 兰州大学 一种深结雪崩倍增光控晶闸管及其触发控制系统

Also Published As

Publication number Publication date
SE7707114L (sv) 1978-08-29
DE2738152A1 (de) 1978-08-31
CA1086866A (fr) 1980-09-30
GB1588534A (en) 1981-04-23

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