SE7707114L - Forfarande for framstellning av fast-tillstand-anordningar - Google Patents

Forfarande for framstellning av fast-tillstand-anordningar

Info

Publication number
SE7707114L
SE7707114L SE7707114A SE7707114A SE7707114L SE 7707114 L SE7707114 L SE 7707114L SE 7707114 A SE7707114 A SE 7707114A SE 7707114 A SE7707114 A SE 7707114A SE 7707114 L SE7707114 L SE 7707114L
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
fixed
mode devices
devices
Prior art date
Application number
SE7707114A
Other languages
English (en)
Swedish (sv)
Inventor
V A K Temple
B J Baliga
Original Assignee
Electric Power Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Res Inst filed Critical Electric Power Res Inst
Publication of SE7707114L publication Critical patent/SE7707114L/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50Physical imperfections
    • H10D62/53Physical imperfections the imperfections being within the semiconductor body 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
SE7707114A 1977-02-28 1977-06-20 Forfarande for framstellning av fast-tillstand-anordningar SE7707114L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77271277A 1977-02-28 1977-02-28

Publications (1)

Publication Number Publication Date
SE7707114L true SE7707114L (sv) 1978-08-29

Family

ID=25095976

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7707114A SE7707114L (sv) 1977-02-28 1977-06-20 Forfarande for framstellning av fast-tillstand-anordningar

Country Status (5)

Country Link
JP (1) JPS53106584A (fr)
CA (1) CA1086866A (fr)
DE (1) DE2738152A1 (fr)
GB (1) GB1588534A (fr)
SE (1) SE7707114L (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3369234D1 (en) * 1982-11-15 1987-02-19 Toshiba Kk Thyristor device protected from an overvoltage
GB8717695D0 (en) * 1987-07-25 1987-09-03 Marconi Electronic Devices Thyristors
DE3927899A1 (de) * 1989-08-24 1991-02-28 Eupec Gmbh & Co Kg Thyristor und verfahren zu seiner herstellung
EP0419898B1 (fr) * 1989-09-28 2000-05-31 Siemens Aktiengesellschaft Méthode pour augmenter la tenue en tension d'un dispositif semi-conducteur à plusieurs couches
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
CN110265510B (zh) * 2019-07-10 2024-04-05 兰州大学 一种深结雪崩倍增光控晶闸管及其触发控制系统

Also Published As

Publication number Publication date
DE2738152A1 (de) 1978-08-31
JPS53106584A (en) 1978-09-16
CA1086866A (fr) 1980-09-30
GB1588534A (en) 1981-04-23

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