CA1162327A - Diode et memoire morte effacable electriquement utilisant cette diode - Google Patents

Diode et memoire morte effacable electriquement utilisant cette diode

Info

Publication number
CA1162327A
CA1162327A CA000430399A CA430399A CA1162327A CA 1162327 A CA1162327 A CA 1162327A CA 000430399 A CA000430399 A CA 000430399A CA 430399 A CA430399 A CA 430399A CA 1162327 A CA1162327 A CA 1162327A
Authority
CA
Canada
Prior art keywords
region
eeprom device
memory
diode
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000430399A
Other languages
English (en)
Inventor
Scott H. Holmberg
Richard A. Flasck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of CA1162327A publication Critical patent/CA1162327A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
CA000430399A 1979-12-13 1983-06-14 Diode et memoire morte effacable electriquement utilisant cette diode Expired CA1162327A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US06/103,011 1979-12-13
US20827480A 1980-11-19 1980-11-19
US208,274 1980-11-19

Publications (1)

Publication Number Publication Date
CA1162327A true CA1162327A (fr) 1984-02-14

Family

ID=26799984

Family Applications (3)

Application Number Title Priority Date Filing Date
CA000366713A Expired CA1155239A (fr) 1979-12-13 1980-12-12 Diode et memoire morte ou memoire morte programmable effacable electriquement utilisant cette diode
CA000430399A Expired CA1162327A (fr) 1979-12-13 1983-06-14 Diode et memoire morte effacable electriquement utilisant cette diode
CA000430398A Expired CA1161970A (fr) 1979-12-13 1983-06-14 Diode et memoire morte utilisant cette diode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CA000366713A Expired CA1155239A (fr) 1979-12-13 1980-12-12 Diode et memoire morte ou memoire morte programmable effacable electriquement utilisant cette diode

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA000430398A Expired CA1161970A (fr) 1979-12-13 1983-06-14 Diode et memoire morte utilisant cette diode

Country Status (15)

Country Link
JP (3) JPS56115571A (fr)
KR (2) KR850001045B1 (fr)
AU (1) AU543740B2 (fr)
BE (1) BE886631A (fr)
CA (3) CA1155239A (fr)
DE (1) DE3046701A1 (fr)
FR (1) FR2475295A1 (fr)
GB (1) GB2066566B (fr)
IL (1) IL61671A (fr)
IT (1) IT1194001B (fr)
MX (1) MX150800A (fr)
NL (1) NL8006771A (fr)
SE (1) SE8008739L (fr)
SG (1) SG72784G (fr)
ZA (3) ZA807762B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Families Citing this family (28)

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JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− 半導体装置
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
AU562641B2 (en) * 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP3948292B2 (ja) 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
JP4808966B2 (ja) * 2002-09-19 2011-11-02 シャープ株式会社 抵抗変化機能体並びにそれを備えたメモリおよび電子機器
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP4767653B2 (ja) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置及び無線チップ
CN101044624A (zh) 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US9142763B2 (en) 2007-06-20 2015-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Electronic component, and a method of manufacturing an electronic component

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5819138B2 (ja) * 1977-01-11 1983-04-16 日本電信電話株式会社 半導体装置
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
DE2909197A1 (de) * 1978-03-20 1979-10-04 Texas Instruments Inc Verfahren zur herstellung eines festspeichers und festspeichermatrix

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
US10193064B2 (en) 2014-09-03 2019-01-29 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
US10418554B2 (en) 2014-09-03 2019-09-17 Micron Technology, Inc. Methods of forming memory cells and semiconductor devices
US10923657B2 (en) 2014-09-03 2021-02-16 Micron Technology, Inc. Methods of forming memory cells and memory devices
US11672191B2 (en) 2014-09-03 2023-06-06 Micron Technology, Inc. Semiconductor devices comprising threshold switching materials

Also Published As

Publication number Publication date
KR850001045B1 (en) 1985-07-19
CA1155239A (fr) 1983-10-11
AU543740B2 (en) 1985-05-02
KR830004679A (ko) 1983-07-16
IL61671A0 (en) 1981-01-30
IT8026643A0 (it) 1980-12-12
JPS56100464A (en) 1981-08-12
BE886631A (fr) 1981-04-01
AU6531580A (en) 1981-06-18
IL61671A (en) 1984-04-30
KR830004681A (ko) 1983-07-16
CA1161970A (fr) 1984-02-07
NL8006771A (nl) 1981-07-16
GB2066566B (en) 1984-07-04
MX150800A (es) 1984-07-19
JPS56115571A (en) 1981-09-10
DE3046701A1 (de) 1981-10-15
GB2066566A (en) 1981-07-08
ZA807762B (en) 1981-12-30
IT1194001B (it) 1988-08-31
SE8008739L (sv) 1981-06-14
FR2475295A1 (fr) 1981-08-07
SG72784G (en) 1985-03-29
JPS56103474A (en) 1981-08-18
ZA807761B (en) 1981-12-30
ZA807763B (en) 1981-12-30

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