CA1187203A - Photomasque pour circuits integres - Google Patents

Photomasque pour circuits integres

Info

Publication number: CA1187203A
Authority: CA; Canada
Prior art keywords: photomask; film; substrate; tin; reflectance
Prior art date: 1981-12-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000417821A

Other languages

English (en)

Inventor

Bernt Narken

Henry C. Schick

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-12-30

Filing date

1982-12-15

Publication date

1985-05-14

1982-12-15 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1985-05-14 Application granted granted Critical

1985-05-14 Publication of CA1187203A publication Critical patent/CA1187203A/fr

Status Expired legal-status Critical Current

Links

VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 40
QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims abstract description 36
239000000758 substrate Substances 0.000 claims abstract description 31
239000011521 glass Substances 0.000 claims abstract description 27
239000010453 quartz Substances 0.000 claims abstract description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
239000011651 chromium Substances 0.000 claims description 29
229910052804 chromium Inorganic materials 0.000 claims description 28
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
230000003287 optical effect Effects 0.000 claims description 10
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
229910052760 oxygen Inorganic materials 0.000 claims description 6
239000001301 oxygen Substances 0.000 claims description 6
230000000295 complement effect Effects 0.000 claims description 4
238000000609 electron-beam lithography Methods 0.000 claims description 3
239000000654 additive Substances 0.000 claims 3
229910052738 indium Inorganic materials 0.000 claims 3
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
239000002131 composite material Substances 0.000 abstract description 12
238000000576 coating method Methods 0.000 abstract description 5
238000002310 reflectometry Methods 0.000 abstract description 2
238000000034 method Methods 0.000 description 13
238000002834 transmittance Methods 0.000 description 8
238000004544 sputter deposition Methods 0.000 description 6
230000003068 static effect Effects 0.000 description 6
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
238000005530 etching Methods 0.000 description 5
238000001020 plasma etching Methods 0.000 description 5
239000004065 semiconductor Substances 0.000 description 5
238000007738 vacuum evaporation Methods 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
229910021627 Tin(IV) chloride Inorganic materials 0.000 description 4
230000000694 effects Effects 0.000 description 4
235000019441 ethanol Nutrition 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000000463 material Substances 0.000 description 4
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 4
238000013459 approach Methods 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000010894 electron beam technology Methods 0.000 description 3
230000000873 masking effect Effects 0.000 description 3
229920002120 photoresistant polymer Polymers 0.000 description 3
238000012545 processing Methods 0.000 description 3
230000005855 radiation Effects 0.000 description 3
238000005507 spraying Methods 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
238000001039 wet etching Methods 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
239000012080 ambient air Substances 0.000 description 2
229910021529 ammonia Inorganic materials 0.000 description 2
238000000137 annealing Methods 0.000 description 2
-1 as for example Chemical compound 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
229910017052 cobalt Inorganic materials 0.000 description 2
239000010941 cobalt Substances 0.000 description 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
238000011109 contamination Methods 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000006731 degradation reaction Methods 0.000 description 2
238000007599 discharging Methods 0.000 description 2
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
238000000206 photolithography Methods 0.000 description 2
229910052700 potassium Inorganic materials 0.000 description 2
239000011591 potassium Substances 0.000 description 2
QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
239000005630 Diquat Substances 0.000 description 1
241000501667 Etroplus Species 0.000 description 1
229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
GWVKDXOHXJEUCP-UHFFFAOYSA-N [N].[O].[Ar] Chemical compound [N].[O].[Ar] GWVKDXOHXJEUCP-UHFFFAOYSA-N 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
239000002318 adhesion promoter Substances 0.000 description 1
230000003667 anti-reflective effect Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000005388 borosilicate glass Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
229910000423 chromium oxide Inorganic materials 0.000 description 1
229940114081 cinnamate Drugs 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000010276 construction Methods 0.000 description 1
229930003836 cresol Natural products 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000003618 dip coating Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000007689 inspection Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
238000012958 reprocessing Methods 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
238000007761 roller coating Methods 0.000 description 1
238000005389 semiconductor device fabrication Methods 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
239000007921 spray Substances 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
238000012795 verification Methods 0.000 description 1
229920002554 vinyl polymer Polymers 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
- Y10T428/24868—Translucent outer layer
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/24992—Density or compression of components

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)

CA000417821A 1981-12-30 1982-12-15 Photomasque pour circuits integres Expired CA1187203A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/336,005 US4411972A (en)	1981-12-30	1981-12-30	Integrated circuit photomask
US336,005		1981-12-30

Publications (1)

Publication Number	Publication Date
CA1187203A true CA1187203A (fr)	1985-05-14

Family

ID=23314174

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000417821A Expired CA1187203A (fr)	1981-12-30	1982-12-15	Photomasque pour circuits integres

Country Status (5)

Country	Link
US (1)	US4411972A (fr)
EP (1)	EP0082977B1 (fr)
JP (1)	JPS58118647A (fr)
CA (1)	CA1187203A (fr)
DE (1)	DE3270169D1 (fr)

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US4632871A (en) *	1984-02-16	1986-12-30	Varian Associates, Inc.	Anodic bonding method and apparatus for X-ray masks
US4554259A (en) *	1984-05-08	1985-11-19	Schott Glass Technologies, Inc.	Low expansion, alkali-free borosilicate glass suitable for photomask applications
US5009761A (en) *	1984-09-24	1991-04-23	Spafax Holdings Plc.,	Method of producing an optical component, and components formed thereby
JPS61269312A (ja) *	1985-05-06	1986-11-28	シ−メンス、アクチエンゲゼルシヤフト	電子線照射マスク
US4770947A (en) *	1987-01-02	1988-09-13	International Business Machines Corporation	Multiple density mask and fabrication thereof
US4957835A (en) *	1987-05-15	1990-09-18	Kevex Corporation	Masked electron beam lithography
US4948706A (en) *	1987-12-30	1990-08-14	Hoya Corporation	Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
DE3937308C1 (fr) *	1989-11-09	1991-03-21	Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
EP0477035B1 (fr) *	1990-09-21	1999-12-29	Dai Nippon Printing Co., Ltd.	Procédé pour fabriquer un photomasque à décalage de phase
JPH04131853A (ja) *	1990-09-21	1992-05-06	Dainippon Printing Co Ltd	位相シフトフォトマスクの修正方法
JP2771907B2 (ja) *	1991-05-24	1998-07-02	三菱電機株式会社	フォトマスクおよびその製造方法
JPH05129760A (ja) *	1991-11-06	1993-05-25	Fujitsu Ltd	導体パターンの形成方法
SG43954A1 (en) *	1991-11-15	1997-11-14	Canon Kk	X-ray mask structure and x-ray exposing method and semiconductor device manufactured by use of x-ray mask structure and method for manufacturing x-ray mask structure
AU5681194A (en) *	1993-01-21	1994-08-15	Sematech, Inc.	Phase shifting mask structure with multilayer optical coating for improved transmission
US5411824A (en) *	1993-01-21	1995-05-02	Sematech, Inc.	Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) *	1993-01-21	1995-05-23	Sematech, Inc.	Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5743966A (en) *	1996-05-31	1998-04-28	The Boc Group, Inc.	Unwinding of plastic film in the presence of a plasma
JP3347670B2 (ja) *	1998-07-06	2002-11-20	キヤノン株式会社	マスク及びそれを用いた露光方法
US6180291B1 (en) *	1999-01-22	2001-01-30	International Business Machines Corporation	Static resistant reticle
US6406818B1 (en)	1999-03-31	2002-06-18	Photronics, Inc.	Method of manufacturing photomasks by plasma etching with resist stripped
US6444372B1 (en) *	1999-10-25	2002-09-03	Svg Lithography Systems, Inc.	Non absorbing reticle and method of making same
US7226706B2 (en) *	2003-05-20	2007-06-05	Taiwan Semiconductor Manufacturing Company	Modification of mask blank to avoid charging effect
US7060400B2 (en) *	2003-08-08	2006-06-13	Taiwan Semiconductor Manufacturing Company, Ltd.	Method to improve photomask critical dimension uniformity and photomask fabrication process
JP5560776B2 (ja) *	2010-03-03	2014-07-30	旭硝子株式会社	Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法
US8872137B2 (en)	2011-09-15	2014-10-28	Phoseon Technology, Inc.	Dual elliptical reflector with a co-located foci for curing optical fibers
CN103964686B (zh) *	2013-01-29	2016-10-26	中微半导体设备(上海)有限公司	一种用于等离子处理腔室的石英组件及等离子体处理设备
US9372394B2 (en)	2014-01-24	2016-06-21	International Business Machines Corporation	Test pattern layout for test photomask and method for evaluating critical dimension changes
DE102021124138B4 (de) *	2021-09-17	2025-07-31	Infineon Technologies Ag	Verfahren zur Herstellung einer Leistungshalbleitervorrichtung und Leistungshalbleitervorrichtung

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US2919212A (en) *	1955-07-13	1959-12-29	Libbey Owens Ford Glass Co	Electrically conducting glass and method for producing same
DE1082017B (de) *	1958-03-05	1960-05-19	Pittsburgh Plate Glass Co	Verfahren und Vorrichtung zum Aufbringen hydrolysierbarer Metallverbindungen auf waermebestaendige Koerper, z. B. Glasscheiben
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US3458370A (en) *	1966-01-26	1969-07-29	Us Air Force	Fotoform-metallic evaporation mask making
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US3542612A (en) *	1967-08-11	1970-11-24	Western Electric Co	Photolithographic masks and methods for their manufacture
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US3715244A (en) *	1971-08-26	1973-02-06	Corning Glass Works	Chromium film microcircuit mask
US3816223A (en) *	1971-12-27	1974-06-11	Ibm	Fabrication mask using rare earth orthoferrites
US3877810A (en) *	1972-11-08	1975-04-15	Rca Corp	Method for making a photomask
US3916056A (en) *	1972-12-29	1975-10-28	Rca Corp	Photomask bearing a pattern of metal plated areas
US4022927A (en) *	1975-06-30	1977-05-10	International Business Machines Corporation	Methods for forming thick self-supporting masks
GB1530727A (en) *	1976-02-05	1978-11-01	Pilkington Brothers Ltd	Treatment of glass
US4049347A (en) *	1976-03-24	1977-09-20	General Electric Company	Scratch-resistant mask for photolithographic processing
JPS5323277A (en) *	1976-08-14	1978-03-03	Konishiroku Photo Ind Co Ltd	Photomasking material and photomask
JPS5340281A (en) *	1976-09-27	1978-04-12	Konishiroku Photo Ind Co Ltd	Photo mask material and manufacturtof it
JPS5423473A (en) *	1977-07-25	1979-02-22	Cho Lsi Gijutsu Kenkyu Kumiai	Photomask and method of inspecting mask pattern using same
JPS5451831A (en) *	1977-09-30	1979-04-24	Konishiroku Photo Ind Co Ltd	Photomask material
JPS5640828A (en) *	1979-09-11	1981-04-17	Mitsubishi Electric Corp	Production of photomask
JPS56116034A (en) *	1980-02-18	1981-09-11	Chiyou Lsi Gijutsu Kenkyu Kumiai	Photomask
JPS56158335A (en) *	1980-05-12	1981-12-07	Mitsubishi Electric Corp	Metallic photomask

1981
- 1981-12-30 US US06/336,005 patent/US4411972A/en not_active Expired - Lifetime
1982
- 1982-11-19 JP JP57202207A patent/JPS58118647A/ja active Granted
- 1982-12-02 EP EP82111112A patent/EP0082977B1/fr not_active Expired
- 1982-12-02 DE DE8282111112T patent/DE3270169D1/de not_active Expired
- 1982-12-15 CA CA000417821A patent/CA1187203A/fr not_active Expired

Also Published As

Publication number	Publication date
JPS58118647A (ja)	1983-07-14
US4411972A (en)	1983-10-25
EP0082977B1 (fr)	1986-03-26
JPS6161668B2 (fr)	1986-12-26
EP0082977A1 (fr)	1983-07-06
DE3270169D1 (en)	1986-04-30

Legal Events

Date	Code	Title	Description
2002-05-15	MKEC	Expiry (correction)
2002-12-15	MKEX	Expiry

Publication	Publication Date	Title
CA1187203A (fr)	1985-05-14	Photomasque pour circuits integres
US5885735A (en)	1999-03-23	Mask having a phase shifter and method of manufacturing same
EP0872767B1 (fr)	2012-05-23	Masque à décalage de phase en demi-teinte et ébauche de masque à décalage de phase en demi-teinte
EP0773477B1 (fr)	2001-05-30	Procédé pour produir un Masque à décalage de phase
US4600686A (en)	1986-07-15	Method of forming a resist mask resistant to plasma etching
EP0585872B1 (fr)	2000-03-29	Procédé pous fabriquer un masque à décolage de phase ou un masque à décolage de phase vierge
US4178403A (en)	1979-12-11	Mask blank and mask
EP0643331A2 (fr)	1995-03-15	Masque à décalage de phase en demi-teinte, masque à décalage de phase vierge en demi-teinte et méthode de fabrication du masque vierge
US3508982A (en)	1970-04-28	Method of making an ultra-violet selective template
US6180291B1 (en)	2001-01-30	Static resistant reticle
US4556608A (en)	1985-12-03	Photomask blank and photomask
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