CA1189603A - Methode et dispositif de production d'un panneu photovoltaique - Google Patents

Methode et dispositif de production d'un panneu photovoltaique

Info

Publication number: CA1189603A
Authority: CA; Canada
Prior art keywords: silicon; depositing; substrate; glow discharge; film
Prior art date: 1980-05-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000460827A

Other languages

English (en)

Inventor

Stanford Ovshinsky

Masatsuga Izu

Vincent D. Cannella

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Energy Conversion Devices Inc

Original Assignee

Energy Conversion Devices Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-05-19

Filing date

1984-08-10

Publication date

1985-06-25

1980-05-19 Priority claimed from US06/151,301 external-priority patent/US4400409A/en

1984-08-10 Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc

1985-06-25 Application granted granted Critical

1985-06-25 Publication of CA1189603A publication Critical patent/CA1189603A/fr

Status Expired legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 15
238000000151 deposition Methods 0.000 claims abstract description 111
239000000758 substrate Substances 0.000 claims abstract description 103
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
229910052710 silicon Inorganic materials 0.000 claims abstract description 94
239000010703 silicon Substances 0.000 claims abstract description 94
229910045601 alloy Inorganic materials 0.000 claims abstract description 20
239000000956 alloy Substances 0.000 claims abstract description 20
229910000676 Si alloy Inorganic materials 0.000 claims abstract description 8
239000000463 material Substances 0.000 claims description 82
230000008021 deposition Effects 0.000 claims description 57
239000002019 doping agent Substances 0.000 claims description 56
238000000034 method Methods 0.000 claims description 40
229910052751 metal Inorganic materials 0.000 claims description 28
239000002184 metal Substances 0.000 claims description 28
229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
239000004065 semiconductor Substances 0.000 claims description 22
150000001875 compounds Chemical class 0.000 claims description 20
239000011737 fluorine Substances 0.000 claims description 14
229910052731 fluorine Inorganic materials 0.000 claims description 14
239000002210 silicon-based material Substances 0.000 claims description 14
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
229910052796 boron Inorganic materials 0.000 claims description 12
229910052782 aluminium Inorganic materials 0.000 claims description 11
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
238000005137 deposition process Methods 0.000 claims description 9
239000003607 modifier Substances 0.000 claims description 8
ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 8
239000012298 atmosphere Substances 0.000 claims description 6
229910052733 gallium Inorganic materials 0.000 claims description 5
229910052738 indium Inorganic materials 0.000 claims description 5
239000011159 matrix material Substances 0.000 claims description 5
239000000203 mixture Substances 0.000 claims description 5
229910052725 zinc Inorganic materials 0.000 claims description 5
239000011701 zinc Substances 0.000 claims description 5
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
229910052716 thallium Inorganic materials 0.000 claims description 4
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
238000002955 isolation Methods 0.000 claims description 2
BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
229910004014 SiF4 Inorganic materials 0.000 claims 2
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
229910000808 amorphous metal alloy Inorganic materials 0.000 claims 1
238000010438 heat treatment Methods 0.000 claims 1
150000003377 silicon compounds Chemical class 0.000 claims 1
239000010410 layer Substances 0.000 description 118
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 26
229910052739 hydrogen Inorganic materials 0.000 description 26
239000001257 hydrogen Substances 0.000 description 26
239000007789 gas Substances 0.000 description 23
150000002500 ions Chemical class 0.000 description 16
230000008569 process Effects 0.000 description 16
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 13
235000019000 fluorine Nutrition 0.000 description 13
229940060037 fluorine Drugs 0.000 description 13
238000010924 continuous production Methods 0.000 description 7
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
238000010521 absorption reaction Methods 0.000 description 6
239000013078 crystal Substances 0.000 description 6
229910021419 crystalline silicon Inorganic materials 0.000 description 6
230000007547 defect Effects 0.000 description 6
229910000077 silane Inorganic materials 0.000 description 6
229910001220 stainless steel Inorganic materials 0.000 description 6
239000010935 stainless steel Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
238000007792 addition Methods 0.000 description 4
238000011109 contamination Methods 0.000 description 4
229910052732 germanium Inorganic materials 0.000 description 4
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
230000031700 light absorption Effects 0.000 description 4
238000007740 vapor deposition Methods 0.000 description 4
230000004888 barrier function Effects 0.000 description 3
230000007423 decrease Effects 0.000 description 3
150000002739 metals Chemical class 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
239000007787 solid Substances 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 2
239000004215 Carbon black (E152) Substances 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
238000010923 batch production Methods 0.000 description 2
239000000969 carrier Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
239000012535 impurity Substances 0.000 description 2
238000010348 incorporation Methods 0.000 description 2
KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 2
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
229910000073 phosphorus hydride Inorganic materials 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
WWYNJERNGUHSAO-XUDSTZEESA-N (+)-Norgestrel Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](CC)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 WWYNJERNGUHSAO-XUDSTZEESA-N 0.000 description 1
SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 description 1
SUBDBMMJDZJVOS-UHFFFAOYSA-N 5-methoxy-2-{[(4-methoxy-3,5-dimethylpyridin-2-yl)methyl]sulfinyl}-1H-benzimidazole Chemical compound N=1C2=CC(OC)=CC=C2NC=1S(=O)CC1=NC=C(C)C(OC)=C1C SUBDBMMJDZJVOS-UHFFFAOYSA-N 0.000 description 1
235000003930 Aegle marmelos Nutrition 0.000 description 1
244000058084 Aegle marmelos Species 0.000 description 1
101150030352 Arsi gene Proteins 0.000 description 1
OWNRRUFOJXFKCU-UHFFFAOYSA-N Bromadiolone Chemical compound C=1C=C(C=2C=CC(Br)=CC=2)C=CC=1C(O)CC(C=1C(OC2=CC=CC=C2C=1O)=O)C1=CC=CC=C1 OWNRRUFOJXFKCU-UHFFFAOYSA-N 0.000 description 1
229910000669 Chrome steel Inorganic materials 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
241001050985 Disco Species 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
206010037660 Pyrexia Diseases 0.000 description 1
230000009471 action Effects 0.000 description 1
239000008186 active pharmaceutical agent Substances 0.000 description 1
238000005275 alloying Methods 0.000 description 1
229940037003 alum Drugs 0.000 description 1
238000007743 anodising Methods 0.000 description 1
229910000070 arsenic hydride Inorganic materials 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
150000001639 boron compounds Chemical class 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
238000005234 chemical deposition Methods 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
238000004891 communication Methods 0.000 description 1
230000006854 communication Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000002939 deleterious effect Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
150000002221 fluorine Chemical class 0.000 description 1
ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
230000006872 improvement Effects 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
239000007769 metal material Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
235000016768 molybdenum Nutrition 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000006798 recombination Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
241000894007 species Species 0.000 description 1
229940071182 stannate Drugs 0.000 description 1
239000007858 starting material Substances 0.000 description 1
125000001424 substituent group Chemical group 0.000 description 1
230000002459 sustained effect Effects 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Photovoltaic Devices (AREA)

CA000460827A 1980-05-19 1984-08-10 Methode et dispositif de production d'un panneu photovoltaique Expired CA1189603A (fr)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US06/151,301 US4400409A (en)	1980-05-19	1980-05-19	Method of making p-doped silicon films
US151,301		1980-05-19
CA000377664A CA1184096A (fr)	1980-05-19	1981-05-15	Methode de production de pellicules de silicone a dopage p, produit a dopage p plus efficace ainsi obtenu

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000377664A Division CA1184096A (fr)	1980-05-19	1981-05-15	Methode de production de pellicules de silicone a dopage p, produit a dopage p plus efficace ainsi obtenu

Publications (1)

Publication Number	Publication Date
CA1189603A true CA1189603A (fr)	1985-06-25

Family

ID=25669324

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000460827A Expired CA1189603A (fr)	1980-05-19	1984-08-10	Methode et dispositif de production d'un panneu photovoltaique

Country Status (1)

Country	Link
CA (1)	CA1189603A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN115732118A (zh) *	2022-09-05	2023-03-03	宁夏大学	一种N-TOPCon太阳电池用低温烧结银铝浆及其制备方法和应用

1984
- 1984-08-10 CA CA000460827A patent/CA1189603A/fr not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN115732118A (zh) *	2022-09-05	2023-03-03	宁夏大学	一种N-TOPCon太阳电池用低温烧结银铝浆及其制备方法和应用
CN115732118B (zh) *	2022-09-05	2024-06-25	宁夏大学	一种N-TOPCon太阳电池用低温烧结银铝浆及其制备方法和应用

Legal Events

Date	Code	Title	Description
2002-06-25	MKEX	Expiry

Publication	Publication Date	Title
CA1184096A (fr)	1985-03-19	Methode de production de pellicules de silicone a dopage p, produit a dopage p plus efficace ainsi obtenu
CA1189601A (fr)	1985-06-25	Dispositif photovoltaique aux caracteristiques courant ameliorees
US4409605A (en)	1983-10-11	Amorphous semiconductors equivalent to crystalline semiconductors
CN103718276B (zh)	2016-05-18	使氢化非晶硅和非晶氢化硅合金稳定化的方法
KR910005370B1 (ko)	1991-07-29	극초단파 에너지를 사용한 비정질 반도체 합금 및 소자 제조방법
JP2951146B2 (ja)	1999-09-20	光起電力デバイス
US4624862A (en)	1986-11-25	Boron doped semiconductor materials and method for producing same
GB2124826A (en)	1984-02-22	Amorphous semiconductor materials
JPS6356172B2 (fr)	1988-11-07
US4769682A (en)	1988-09-06	Boron doped semiconductor materials and method for producing same
US4520380A (en)	1985-05-28	Amorphous semiconductors equivalent to crystalline semiconductors
EP0151754B1 (fr)	1991-12-18	Procédé de fabrication d'un élément photoconducteur
US4710786A (en)	1987-12-01	Wide band gap semiconductor alloy material
US4677738A (en)	1987-07-07	Method of making a photovoltaic panel
US4839312A (en)	1989-06-13	Fluorinated precursors from which to fabricate amorphous semiconductor material
CA1189603A (fr)	1985-06-25	Methode et dispositif de production d'un panneu photovoltaique
US4703336A (en)	1987-10-27	Photodetection and current control devices
JPS6334632B2 (fr)	1988-07-11
JPH11266030A (ja)	1999-09-28	半導体素子、及び半導体素子の製造方法
JPH04290274A (ja)	1992-10-14	光電変換装置
JPS58132983A (ja)	1983-08-08	太陽電池の製造方法
JPH04192373A (ja)	1992-07-10	光起電力素子
JP2757896B2 (ja)	1998-05-25	光起電力装置
US4756924A (en)	1988-07-12	Method for the microwave fabrication of boron doped semiconductor materials
CA1213375A (fr)	1986-10-28	Dispositif semiconducteur a corps en silice amorphe