CA1222576A - Dispositif semiconducteur a support perfectionne - Google Patents

Dispositif semiconducteur a support perfectionne

Info

Publication number
CA1222576A
CA1222576A CA000470319A CA470319A CA1222576A CA 1222576 A CA1222576 A CA 1222576A CA 000470319 A CA000470319 A CA 000470319A CA 470319 A CA470319 A CA 470319A CA 1222576 A CA1222576 A CA 1222576A
Authority
CA
Canada
Prior art keywords
support plate
semiconductor
semiconductor device
ring shaped
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000470319A
Other languages
English (en)
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of CA1222576A publication Critical patent/CA1222576A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H10W70/26—Semiconductor materials

Landscapes

  • Thyristors (AREA)
CA000470319A 1983-12-16 1984-12-17 Dispositif semiconducteur a support perfectionne Expired CA1222576A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58238320A JPS60130170A (ja) 1983-12-16 1983-12-16 半導体装置
JP58-238320 1983-12-16

Publications (1)

Publication Number Publication Date
CA1222576A true CA1222576A (fr) 1987-06-02

Family

ID=17028453

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000470319A Expired CA1222576A (fr) 1983-12-16 1984-12-17 Dispositif semiconducteur a support perfectionne

Country Status (2)

Country Link
JP (1) JPS60130170A (fr)
CA (1) CA1222576A (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762540A (en) * 1980-10-02 1982-04-15 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS60130170A (ja) 1985-07-11

Similar Documents

Publication Publication Date Title
US4996586A (en) Crimp-type semiconductor device having non-alloy structure
US3351825A (en) Semiconductor device having an anodized protective film thereon and method of manufacturing same
US4388635A (en) High breakdown voltage semiconductor device
US3913217A (en) Method of producing a semiconductor device
US3588632A (en) Structurally reinforced semiconductor device
US4524376A (en) Corrugated semiconductor device
CA1157135A (fr) Thyristor photocommande
US4400716A (en) Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate
US3343048A (en) Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3271636A (en) Gallium arsenide semiconductor diode and method
US4304043A (en) Process for preparing semiconductor device _by forming reinforcing regions to facilitate separation of pellets
CA1222576A (fr) Dispositif semiconducteur a support perfectionne
US3361943A (en) Semiconductor junction devices which include semiconductor wafers having bevelled edges
US4246693A (en) Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
US2960640A (en) Electric semiconductor device of the p-n junction type
JPH0728044B2 (ja) ガラス被覆半導体チツプの製造方法
US3270255A (en) Silicon rectifying junction structures for electric power and process of production thereof
JPS584815B2 (ja) 半導体装置の製造方法
JPS61158171A (ja) 半導体装置
JPS639670B2 (fr)
EP0238665A1 (fr) Dispositif a semiconducteurs
JPH0249732Y2 (fr)
US3493442A (en) High voltage semiconductor device
JPH0718456U (ja) 圧接型半導体装置
JPS59100563A (ja) メサ型半導体装置の製造方法

Legal Events

Date Code Title Description
MKEX Expiry