CA1247740A - Dispositif a porte flottante utilisant un dielectrique composite - Google Patents

Dispositif a porte flottante utilisant un dielectrique composite

Info

Publication number: CA1247740A
Authority: CA; Canada
Prior art keywords: layer; floating gate; silicon; silicon dioxide; charge
Prior art date: 1985-03-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000500348A

Other languages

English (en)

Inventor

Roberto Romano-Moran

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

SK Hynix America Inc

NCR Voyix Corp

Original Assignee

NCR Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-08

Filing date

1986-01-24

Publication date

1988-12-28

1986-01-24 Application filed by NCR Corp filed Critical NCR Corp

1988-12-28 Application granted granted Critical

1988-12-28 Publication of CA1247740A publication Critical patent/CA1247740A/fr

Status Expired legal-status Critical Current

Links

238000007667 floating Methods 0.000 title claims abstract description 87
239000002131 composite material Substances 0.000 title claims abstract description 33
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
230000015654 memory Effects 0.000 claims abstract description 35
235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
239000000377 silicon dioxide Substances 0.000 claims abstract description 25
239000000758 substrate Substances 0.000 claims abstract description 18
238000012546 transfer Methods 0.000 claims abstract description 18
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
229910052710 silicon Inorganic materials 0.000 claims abstract description 15
239000010703 silicon Substances 0.000 claims abstract description 15
229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
230000005689 Fowler Nordheim tunneling Effects 0.000 claims abstract description 10
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
230000005669 field effect Effects 0.000 claims description 5
239000000126 substance Substances 0.000 claims description 5
239000000463 material Substances 0.000 claims description 3
238000002955 isolation Methods 0.000 claims description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
229960001866 silicon dioxide Drugs 0.000 claims 11
238000007600 charging Methods 0.000 claims 1
238000007599 discharging Methods 0.000 claims 1
230000007723 transport mechanism Effects 0.000 claims 1
230000014759 maintenance of location Effects 0.000 abstract description 11
150000004767 nitrides Chemical class 0.000 description 39
238000009792 diffusion process Methods 0.000 description 15
230000005641 tunneling Effects 0.000 description 8
229920005591 polysilicon Polymers 0.000 description 7
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
230000007246 mechanism Effects 0.000 description 6
239000003989 dielectric material Substances 0.000 description 5
230000005684 electric field Effects 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 4
230000008878 coupling Effects 0.000 description 4
238000010168 coupling process Methods 0.000 description 4
238000005859 coupling reaction Methods 0.000 description 4
238000002347 injection Methods 0.000 description 4
239000007924 injection Substances 0.000 description 4
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
229910021529 ammonia Inorganic materials 0.000 description 3
238000000151 deposition Methods 0.000 description 3
230000008021 deposition Effects 0.000 description 3
230000000717 retained effect Effects 0.000 description 3
229910000077 silane Inorganic materials 0.000 description 3
238000012360 testing method Methods 0.000 description 3
241001663154 Electron Species 0.000 description 2
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
238000013459 approach Methods 0.000 description 2
230000004888 barrier function Effects 0.000 description 2
230000002457 bidirectional effect Effects 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000006731 degradation reaction Methods 0.000 description 2
230000000873 masking effect Effects 0.000 description 2
238000000034 method Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
230000003252 repetitive effect Effects 0.000 description 2
230000004044 response Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
240000001973 Ficus microcarpa Species 0.000 description 1
LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
235000010210 aluminium Nutrition 0.000 description 1
230000001609 comparable effect Effects 0.000 description 1
230000001010 compromised effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
229940035564 duration Drugs 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000005525 hole transport Effects 0.000 description 1
230000000977 initiatory effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000007774 longterm Effects 0.000 description 1
238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000001272 nitrous oxide Substances 0.000 description 1
238000000059 patterning Methods 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
239000004576 sand Substances 0.000 description 1

Landscapes

Non-Volatile Memory (AREA)
Read Only Memory (AREA)
Semiconductor Memories (AREA)

CA000500348A 1985-03-08 1986-01-24 Dispositif a porte flottante utilisant un dielectrique composite Expired CA1247740A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US70963085A	1985-03-08	1985-03-08
US709,630		1985-03-08

Publications (1)

Publication Number	Publication Date
CA1247740A true CA1247740A (fr)	1988-12-28

Family

ID=24850680

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000500348A Expired CA1247740A (fr)	1985-03-08	1986-01-24	Dispositif a porte flottante utilisant un dielectrique composite

Country Status (2)

Country	Link
JP (1)	JPS62502156A (fr)
CA (1)	CA1247740A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0746704B2 (ja) *	1986-05-15	1995-05-17	松下電子工業株式会社	半導体記憶装置
JP4609533B2 (ja)	2008-06-12	2011-01-12	セイコーエプソン株式会社	半導体集積回路
JP5606235B2 (ja) *	2010-09-14	2014-10-15	セイコーインスツル株式会社	半導体不揮発性メモリ装置

1986
- 1986-01-24 CA CA000500348A patent/CA1247740A/fr not_active Expired
- 1986-02-24 JP JP61501353A patent/JPS62502156A/ja active Pending

Also Published As

Publication number	Publication date
JPS62502156A (ja)	1987-08-20

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Legal Events

Date	Code	Title	Description
2006-01-24	MKEX	Expiry