CA1271076A - Couche d'accentuation pour dispositifs electrophotographiques et methode de reduction du piegeage des electrons au moyen de cette couche - Google Patents
Couche d'accentuation pour dispositifs electrophotographiques et methode de reduction du piegeage des electrons au moyen de cette coucheInfo
- Publication number
- CA1271076A CA1271076A CA000515911A CA515911A CA1271076A CA 1271076 A CA1271076 A CA 1271076A CA 000515911 A CA000515911 A CA 000515911A CA 515911 A CA515911 A CA 515911A CA 1271076 A CA1271076 A CA 1271076A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- enhancement layer
- fabricated
- medium
- alloys
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76910685A | 1985-08-26 | 1985-08-26 | |
| US769,106 | 1985-08-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1271076A true CA1271076A (fr) | 1990-07-03 |
Family
ID=25084475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000515911A Expired - Fee Related CA1271076A (fr) | 1985-08-26 | 1986-08-13 | Couche d'accentuation pour dispositifs electrophotographiques et methode de reduction du piegeage des electrons au moyen de cette couche |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0212581B1 (fr) |
| JP (1) | JPH0797228B2 (fr) |
| AT (1) | ATE91807T1 (fr) |
| CA (1) | CA1271076A (fr) |
| DE (1) | DE3688723T2 (fr) |
| IN (1) | IN166164B (fr) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
| JPS5711351A (en) * | 1980-06-25 | 1982-01-21 | Shunpei Yamazaki | Electrostatic copying machine |
| JPS6059367A (ja) * | 1983-08-19 | 1985-04-05 | ゼロツクス コーポレーシヨン | 調整した無定形ケイ素を含む電子写真装置 |
| JPS6045258A (ja) * | 1983-08-23 | 1985-03-11 | Sharp Corp | 電子写真感光体 |
| JPS6083957A (ja) * | 1983-10-13 | 1985-05-13 | Sharp Corp | 電子写真感光体 |
| US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
| JPS60153051A (ja) * | 1984-01-20 | 1985-08-12 | Toshiba Corp | 光導電部材 |
| DE151754T1 (de) * | 1984-02-14 | 1986-01-16 | Energy Conversion Devices, Inc., Troy, Mich. | Verfahren zur herstellung eines fotoleitfaehigen elementes und auf diese weise hergestellte fotoleitfaehige elemente. |
-
1986
- 1986-08-13 CA CA000515911A patent/CA1271076A/fr not_active Expired - Fee Related
- 1986-08-13 IN IN732/DEL/86A patent/IN166164B/en unknown
- 1986-08-14 DE DE86111267T patent/DE3688723T2/de not_active Expired - Fee Related
- 1986-08-14 EP EP86111267A patent/EP0212581B1/fr not_active Expired - Lifetime
- 1986-08-14 AT AT86111267T patent/ATE91807T1/de not_active IP Right Cessation
- 1986-08-26 JP JP61199887A patent/JPH0797228B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797228B2 (ja) | 1995-10-18 |
| JPS6270853A (ja) | 1987-04-01 |
| EP0212581A2 (fr) | 1987-03-04 |
| EP0212581B1 (fr) | 1993-07-21 |
| DE3688723D1 (de) | 1993-08-26 |
| IN166164B (fr) | 1990-03-24 |
| EP0212581A3 (en) | 1988-09-28 |
| DE3688723T2 (de) | 1993-10-28 |
| ATE91807T1 (de) | 1993-08-15 |
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| GB2099600A (en) | Photoconductive member | |
| CA1260308A (fr) | Photorecepteur electrophotographique, et sa fabrication | |
| US4721663A (en) | Enhancement layer for negatively charged electrophotographic devices | |
| US4713309A (en) | Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer | |
| CA1271076A (fr) | Couche d'accentuation pour dispositifs electrophotographiques et methode de reduction du piegeage des electrons au moyen de cette couche | |
| EP0679955B9 (fr) | Elément photosensible électrophotographique et son procédé de production | |
| US4729937A (en) | Layered amorphous silicon electrophotographic photosensitive member comprises BN surface layer and BN barrier layer | |
| EP0194874B1 (fr) | Photorécepteur pour l'électrophotographie | |
| JPS60128456A (ja) | 電子写真用感光体 | |
| EP0176936A1 (fr) | Elément photosensible électrophotographique | |
| US4666803A (en) | Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range | |
| EP0300807A2 (fr) | Elément électrophotographique photosensible | |
| JPH0652428B2 (ja) | 光導電体 | |
| US6632578B2 (en) | Electrophotographic light-receiving member and process for its production | |
| US4791040A (en) | Multilayered electrophotographic photosensitive member | |
| JPS63241556A (ja) | 電子写真感光体 | |
| Hong et al. | Utilization of amorphous silicon carbide (a-Si: C: H) as a resistive layer in gas microstrip detectors | |
| US5143807A (en) | Electrophotographic photoreceptor with superlattic barrier layer | |
| JPH06194856A (ja) | 電子写真感光体 | |
| JPS63273872A (ja) | 電子写真感光体 | |
| JPS63241560A (ja) | 電子写真感光体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |