CA1274900A - Transistor a effet de champ, et ledit transistor associe a un dispositif optique semiconducteur - Google Patents

Transistor a effet de champ, et ledit transistor associe a un dispositif optique semiconducteur

Info

Publication number
CA1274900A
CA1274900A CA000555687A CA555687A CA1274900A CA 1274900 A CA1274900 A CA 1274900A CA 000555687 A CA000555687 A CA 000555687A CA 555687 A CA555687 A CA 555687A CA 1274900 A CA1274900 A CA 1274900A
Authority
CA
Canada
Prior art keywords
effect transistor
field
layer
gaas
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000555687A
Other languages
English (en)
Inventor
Kensuke Kasahara
Akira Suzuki
Tomohiro Itoh
Tomoji Terakado
Yasumasa Inomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62000678A external-priority patent/JPS63169072A/ja
Priority claimed from JP62072053A external-priority patent/JPS63237466A/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of CA1274900A publication Critical patent/CA1274900A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
CA000555687A 1987-01-05 1987-12-31 Transistor a effet de champ, et ledit transistor associe a un dispositif optique semiconducteur Expired CA1274900A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62-678 1987-01-05
JP62000678A JPS63169072A (ja) 1987-01-05 1987-01-05 電界効果トランジスタ
JP62072053A JPS63237466A (ja) 1987-03-25 1987-03-25 光電子集積回路
JP62-72053 1987-03-25

Publications (1)

Publication Number Publication Date
CA1274900A true CA1274900A (fr) 1990-10-02

Family

ID=26333698

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000555687A Expired CA1274900A (fr) 1987-01-05 1987-12-31 Transistor a effet de champ, et ledit transistor associe a un dispositif optique semiconducteur

Country Status (2)

Country Link
US (1) US4829346A (fr)
CA (1) CA1274900A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207920A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd ＩｎＰ半導体薄膜の製造方法
US5170228A (en) * 1988-02-29 1992-12-08 Sumitomo Electric Industries, Ltd. Opto-electronic integrated circuit
US4996163A (en) * 1988-02-29 1991-02-26 Sumitomo Electric Industries, Ltd. Method for producing an opto-electronic integrated circuit
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
US5196717A (en) * 1989-11-14 1993-03-23 Canon Kabushiki Kaisha Field effect transistor type photo-detector
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
US5567973A (en) * 1995-08-04 1996-10-22 The United States Of America As Represented By The Secretary Of The Army Optical field-effect transistor with improved sensitivity
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
US6417527B1 (en) * 1999-10-12 2002-07-09 Matsushita Electric Industrial Co., Ltd. Diode, method for fabricating the diode, and coplanar waveguide
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US20080121866A1 (en) * 2006-11-27 2008-05-29 Ping Yuan Avalanche photodiode detector
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4593304A (en) * 1981-04-20 1986-06-03 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
JPS59125657A (ja) * 1983-01-06 1984-07-20 Nec Corp 光・電気複合素子の製造方法
JPH0750714B2 (ja) * 1984-01-30 1995-05-31 日本電気株式会社 バイポーラトランジスタ
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
JPS61191063A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 化合物半導体装置

Also Published As

Publication number Publication date
US4829346A (en) 1989-05-09

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