CA2011168A1 - Circuit d'attaque de laser a semiconducteurs - Google Patents

Circuit d'attaque de laser a semiconducteurs

Info

Publication number
CA2011168A1
CA2011168A1 CA2011168A CA2011168A CA2011168A1 CA 2011168 A1 CA2011168 A1 CA 2011168A1 CA 2011168 A CA2011168 A CA 2011168A CA 2011168 A CA2011168 A CA 2011168A CA 2011168 A1 CA2011168 A1 CA 2011168A1
Authority
CA
Canada
Prior art keywords
semiconductor laser
transistors
driving circuit
optimum
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2011168A
Other languages
English (en)
Other versions
CA2011168C (fr
Inventor
Fujito Fukudome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of CA2011168A1 publication Critical patent/CA2011168A1/fr
Application granted granted Critical
Publication of CA2011168C publication Critical patent/CA2011168C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA002011168A 1989-03-01 1990-02-28 Circuit d'attaque de laser a semiconducteurs Expired - Fee Related CA2011168C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-049070 1989-03-01
JP1049070A JPH02228084A (ja) 1989-03-01 1989-03-01 半導体レーザの駆動回路

Publications (2)

Publication Number Publication Date
CA2011168A1 true CA2011168A1 (fr) 1990-09-01
CA2011168C CA2011168C (fr) 1994-02-01

Family

ID=12820820

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002011168A Expired - Fee Related CA2011168C (fr) 1989-03-01 1990-02-28 Circuit d'attaque de laser a semiconducteurs

Country Status (5)

Country Link
US (1) US5038189A (fr)
EP (1) EP0385470B1 (fr)
JP (1) JPH02228084A (fr)
CA (1) CA2011168C (fr)
DE (1) DE69003128T2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394419A (en) * 1991-07-24 1995-02-28 Siemens Aktiengesellschaft Circuit arrangement for limiting the power of the optical signal emitted by a laser diode
DE4210022A1 (de) * 1992-03-27 1993-09-30 Sel Alcatel Ag Ansteuerschaltung für einen Laser
US5398008A (en) * 1992-08-17 1995-03-14 Alcatel N.V. Circuit arrangement for amplitude-modulating the drive signal of a laser
DE19518929A1 (de) * 1995-05-23 1996-11-28 Siemens Ag Lasertreiberschaltung
JP2001127366A (ja) 1999-10-25 2001-05-11 Toshiba Corp 固体レーザ装置の出力制御方法、固体レーザ用電源装置及び固体レーザ装置
US6696887B2 (en) * 2001-09-27 2004-02-24 Matthew S. Taubman Transistor-based interface circuitry
DE102008021588B4 (de) * 2008-04-30 2011-05-19 Esw Gmbh Laser und Verfahren zur Erzeugung gepulster Laserstrahlung
DE102009060873B4 (de) * 2009-12-30 2023-03-30 Ic-Haus Gmbh Integrierte Schaltung zum schnellen Schalten von hohen Strömen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710279A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Driving current for light emitting diode and semiconductor laser
US4803384A (en) * 1985-10-22 1989-02-07 Fujitsu Limited Pulse amplifier suitable for use in the semiconductor laser driving device
US4807239A (en) * 1986-04-03 1989-02-21 Copal Electronics Co., Ltd. Drive and control circuit for laser diode
DE3614691A1 (de) * 1986-04-30 1987-11-05 Siemens Ag Integrierbarer impulsverstaerker

Also Published As

Publication number Publication date
CA2011168C (fr) 1994-02-01
EP0385470A2 (fr) 1990-09-05
US5038189A (en) 1991-08-06
EP0385470B1 (fr) 1993-09-08
DE69003128D1 (de) 1993-10-14
DE69003128T2 (de) 1994-03-03
JPH02228084A (ja) 1990-09-11
EP0385470A3 (fr) 1991-06-12

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed