CA2247586A1 - Silicium polycristallin - Google Patents

Silicium polycristallin Download PDF

Info

Publication number
CA2247586A1
CA2247586A1 CA002247586A CA2247586A CA2247586A1 CA 2247586 A1 CA2247586 A1 CA 2247586A1 CA 002247586 A CA002247586 A CA 002247586A CA 2247586 A CA2247586 A CA 2247586A CA 2247586 A1 CA2247586 A1 CA 2247586A1
Authority
CA
Canada
Prior art keywords
semiconductor material
cleaning
container
acid
metal concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002247586A
Other languages
English (en)
Inventor
Hanns Wochner
Theresia Bauer
Josef Dietl
Werner Ott
Herbert Pichler
Wilhelm Schmidbauer
Dieter Seifert
Susanne Weizbauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of CA2247586A1 publication Critical patent/CA2247586A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Silicon Compounds (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)

Abstract

Matériau semiconducteur composé d'une faible concentration métallique en surface. Il s'agit d'une teneur en fer et/ou en chrome qui est inférieure à 6,66 x 10-11 g/cm2. Une méthode de fabrication de ce matériau semiconducteur comprend un prénettoyage, un nettoyage principal ainsi qu'une hydrophilisation. Un dispositif utilisé dans le cadre de cette méthode comprend un récipient présentant au fond des noyures en forme de pyramides.
CA002247586A 1997-09-19 1998-09-15 Silicium polycristallin Abandoned CA2247586A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19741465A DE19741465A1 (de) 1997-09-19 1997-09-19 Polykristallines Silicium
DE19741465.6 1997-09-19

Publications (1)

Publication Number Publication Date
CA2247586A1 true CA2247586A1 (fr) 1999-03-19

Family

ID=7843002

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002247586A Abandoned CA2247586A1 (fr) 1997-09-19 1998-09-15 Silicium polycristallin

Country Status (6)

Country Link
US (1) US6309467B1 (fr)
EP (1) EP0905796B1 (fr)
JP (1) JP3010441B2 (fr)
KR (1) KR19990029936A (fr)
CA (1) CA2247586A1 (fr)
DE (2) DE19741465A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7922876B2 (en) 2006-08-31 2011-04-12 Wacker Chemie Ag Method for processing an etching mixture which is formed during the production of highly pure silicon

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KR100466964B1 (ko) * 2001-12-27 2005-01-24 엘지.필립스 엘시디 주식회사 폴리실리콘 박막 제조방법
JP4010819B2 (ja) 2002-02-04 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
KR100444869B1 (ko) * 2002-07-15 2004-08-21 현대자동차주식회사 내구력 증대를 위한 라디에이터 구조
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
DE20321702U1 (de) * 2003-05-07 2008-12-24 Universität Konstanz Vorrichtung zum Texturieren von Oberflächen von Silizium-Scheiben
US7270706B2 (en) * 2004-10-04 2007-09-18 Dow Corning Corporation Roll crusher to produce high purity polycrystalline silicon chips
DE102005019873B4 (de) * 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
DE102006016323A1 (de) * 2006-04-06 2007-10-11 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置
DE102006031105A1 (de) * 2006-07-05 2008-01-10 Wacker Chemie Ag Verfahren zur Reinigung von Polysilicium-Bruch
DE102006035081A1 (de) * 2006-07-28 2008-01-31 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von klassiertem polykristallinen Siliciumbruch in hoher Reinheit
DE102007027110A1 (de) 2007-06-13 2008-12-18 Wacker Chemie Ag Verfahren und Vorrichtung zum Verpacken von polykristallinem Siliciumbruch
DE102007031471A1 (de) 2007-07-05 2009-01-08 Schott Solar Gmbh Verfahren zur Aufbereitung von Siliciummaterial
DE102007039638A1 (de) * 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
DE102007039627A1 (de) 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Schmelzen von Polysilizium-Schüttgut
DE102007039626A1 (de) * 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
DE102007040851A1 (de) * 2007-08-29 2009-03-05 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
DE102007047210A1 (de) 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
JP5025508B2 (ja) * 2008-01-30 2012-09-12 東京エレクトロン株式会社 ポリシリコン膜の除去方法および記憶媒体
CN101597063A (zh) * 2008-06-06 2009-12-09 佳科太阳能硅(厦门)有限公司 冶金硅中杂质硼的去除方法
DE102008040231A1 (de) 2008-07-07 2008-12-18 Wacker Chemie Ag Polykristalliner Siliciumbruch hoher Reinheit und Reinigungsverfahren zu seiner Herstellung
KR20110056486A (ko) * 2008-07-09 2011-05-30 가르보 에스.알.엘. 광전 적용분야용 공급원료의 정제 및 압축 방법
US7905963B2 (en) * 2008-11-28 2011-03-15 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
JP5751748B2 (ja) 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
JP5184476B2 (ja) * 2009-09-17 2013-04-17 東京エレクトロン株式会社 基板液処理方法、基板液処理装置および記憶媒体
DE102010003068A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
DE102010040836A1 (de) 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben
DE102010041639A1 (de) 2010-09-29 2012-03-29 Wacker Chemie Ag Verfahren zur Reinigung von Polysilicium-Bruchstücken
DE102011004916B4 (de) 2011-03-01 2013-11-28 Wacker Chemie Ag Vorrichtung und Verfahren zum Trocknen von Polysilicium
DE102011005995A1 (de) 2011-03-23 2012-09-27 Wacker Chemie Ag Verfahren zur Nachdosierung einer Säure in einem Reinigungsbad
JP2012224499A (ja) * 2011-04-19 2012-11-15 Shin-Etsu Chemical Co Ltd シリコン芯線の製造方法
JP5689382B2 (ja) * 2011-07-25 2015-03-25 信越化学工業株式会社 多結晶シリコンロッドの破砕方法
DE102011080105A1 (de) 2011-07-29 2013-01-31 Wacker Chemie Ag Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken
DE102011089449A1 (de) 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristalliner Siliciumstab und Verfahren zur Herstellung von Polysilicium
DE102012200994A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium
DE102012200992A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
JP5910226B2 (ja) * 2012-03-26 2016-04-27 栗田工業株式会社 微粒子の洗浄方法
DE102012207513A1 (de) * 2012-05-07 2013-11-07 Wacker Chemie Ag Polykristalliner Siliciumstab und Verfahren zu dessen Herstellung
DE102012218748B4 (de) 2012-10-15 2014-02-13 Wacker Chemie Ag Trocknen von Polysilicium
DE102012218747A1 (de) 2012-10-15 2014-04-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
DE102012223193A1 (de) 2012-12-14 2013-03-28 Wacker Chemie Ag Verfahren zum Ausschleusen von Siliciumsplittern aus einem Reinigungsbad für Polysilicium
DE102013207251A1 (de) 2013-04-22 2014-10-23 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
US20160200571A1 (en) * 2013-09-05 2016-07-14 Kit Co, Ltd. Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production
DE102013221826A1 (de) 2013-10-28 2015-04-30 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102013223883A1 (de) * 2013-11-22 2015-05-28 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
DE102013225146A1 (de) 2013-12-06 2014-04-24 Wacker Chemie Ag Verfahren zur Herstellung eines Silicium-Dünnstabs
JP6184906B2 (ja) * 2014-06-20 2017-08-23 信越化学工業株式会社 多結晶シリコン塊の洗浄方法
JP5820917B2 (ja) * 2014-10-03 2015-11-24 信越化学工業株式会社 多結晶シリコンの製造方法
JP6329920B2 (ja) * 2015-04-14 2018-05-23 信越化学工業株式会社 多結晶シリコン塊の評価方法
DE102015209629A1 (de) 2015-05-26 2016-12-01 Wacker Chemie Ag Verpackung von Polysilicium
JP6472732B2 (ja) 2015-09-15 2019-02-20 信越化学工業株式会社 樹脂材料、ビニール製袋、多結晶シリコン棒、多結晶シリコン塊
CN106409977B (zh) * 2016-11-21 2018-02-16 新奥光伏能源有限公司 一种太阳能电池硅片的清洗方法、太阳能电池的制备方法
WO2019189001A1 (fr) * 2018-03-28 2019-10-03 株式会社トクヤマ Morceaux de silicium polycristallin concassé et leur procédé de fabrication
CN108722982B (zh) * 2018-05-28 2020-09-22 邢台晶龙电子材料有限公司 一种多晶破碎机鄂板的处理方法
KR20250067885A (ko) 2022-09-22 2025-05-15 와커 헤미 아게 표면 금속 함량이 감소된 실리콘 입자의 제조
CN116395699A (zh) * 2023-04-18 2023-07-07 江苏鑫华半导体科技股份有限公司 电子级多晶硅粉及其制备方法
DE102023129027B3 (de) 2023-10-23 2025-01-09 Singulus Technologies Aktiengesellschaft Behälter zum Aufnehmen von Schüttgut während eines Einbringens in ein Fluid sowie Verfahren zum Fertigen eines Behälters

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7922876B2 (en) 2006-08-31 2011-04-12 Wacker Chemie Ag Method for processing an etching mixture which is formed during the production of highly pure silicon

Also Published As

Publication number Publication date
US6309467B1 (en) 2001-10-30
EP0905796B1 (fr) 2002-04-03
DE59803595D1 (de) 2002-05-08
KR19990029936A (ko) 1999-04-26
JPH11168076A (ja) 1999-06-22
EP0905796A1 (fr) 1999-03-31
JP3010441B2 (ja) 2000-02-21
DE19741465A1 (de) 1999-03-25

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Legal Events

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FZDE Discontinued
FZDE Discontinued

Effective date: 20020916