CH411040A - Dünnschichtspeicheranordnung und Verfahren für deren Betrieb - Google Patents
Dünnschichtspeicheranordnung und Verfahren für deren BetriebInfo
- Publication number
- CH411040A CH411040A CH1054563A CH1054563A CH411040A CH 411040 A CH411040 A CH 411040A CH 1054563 A CH1054563 A CH 1054563A CH 1054563 A CH1054563 A CH 1054563A CH 411040 A CH411040 A CH 411040A
- Authority
- CH
- Switzerland
- Prior art keywords
- layer
- magnetization
- carrier
- axis
- vibrations
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 title claims description 8
- 230000005415 magnetization Effects 0.000 claims description 61
- 230000005291 magnetic effect Effects 0.000 claims description 27
- 230000015654 memory Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 2
- 230000010355 oscillation Effects 0.000 claims 1
- 239000013598 vector Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052861 titanite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/80—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices
- H03K17/84—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices the devices being thin-film devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0858—Generating, replicating or annihilating magnetic domains (also comprising different types of magnetic domains, e.g. "Hard Bubbles")
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C21/00—Digital stores in which the information circulates continuously
- G11C21/02—Digital stores in which the information circulates continuously using electromechanical delay lines, e.g. using a mercury tank
- G11C21/026—Digital stores in which the information circulates continuously using electromechanical delay lines, e.g. using a mercury tank using magnetostriction transducers, e.g. nickel delay line
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/30—Time-delay networks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US219656A US3145372A (en) | 1962-08-27 | 1962-08-27 | Magnetostrictive thin film delay line |
| US219585A US3129412A (en) | 1962-08-27 | 1962-08-27 | Magnetostrictive thin film delay line |
| US241210A US3138789A (en) | 1962-08-27 | 1962-11-30 | Magnetostrictive delay line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH411040A true CH411040A (de) | 1966-04-15 |
Family
ID=27396675
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1054563A CH411040A (de) | 1962-08-27 | 1963-08-26 | Dünnschichtspeicheranordnung und Verfahren für deren Betrieb |
| CH1454563A CH445565A (de) | 1962-08-27 | 1963-11-28 | Dünnschichtspeicheranordnung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1454563A CH445565A (de) | 1962-08-27 | 1963-11-28 | Dünnschichtspeicheranordnung |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US3129412A (fr) |
| BE (1) | BE636486A (fr) |
| CH (2) | CH411040A (fr) |
| DE (2) | DE1218519B (fr) |
| FR (1) | FR1375166A (fr) |
| GB (1) | GB997777A (fr) |
| NL (1) | NL299951A (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3212072A (en) * | 1961-10-17 | 1965-10-12 | Lab For Electronics Inc | Digital delay line |
| US3210707A (en) * | 1962-10-04 | 1965-10-05 | Gen Instrument Corp | Solid state inductor built up of multiple thin films |
| US3328778A (en) * | 1962-12-31 | 1967-06-27 | Stanford Research Inst | Analog storage device |
| US3339188A (en) * | 1963-07-02 | 1967-08-29 | Rca Corp | Serial memory of anisotropic magnetostrictive material accessed by stress wave |
| US3399361A (en) * | 1963-07-24 | 1968-08-27 | Sperry Rand Corp | Variable delay line |
| FR85611E (fr) * | 1964-02-06 | 1965-09-17 | Bull Sa Machines | Dispositifs à impédance variable |
| US3251061A (en) * | 1964-02-12 | 1966-05-10 | Lab For Electronics Inc | Microwave reflector |
| US3334343A (en) * | 1964-04-27 | 1967-08-01 | Hughes Aircraft Co | Analogue memory system |
| US3484759A (en) * | 1965-01-27 | 1969-12-16 | Us Army | Anisotropic magnetic memory having sonic wave transducer |
| US3428957A (en) * | 1965-01-27 | 1969-02-18 | Us Army | Data storage device using sonic wave propagation |
| US3440625A (en) * | 1965-05-05 | 1969-04-22 | Rca Corp | Stress-wave thin-film memory |
| US3465305A (en) * | 1965-10-14 | 1969-09-02 | Sylvania Electric Prod | Magnetosonic thin film memory |
| US3482191A (en) * | 1966-09-30 | 1969-12-02 | Rca Corp | Magnetostrictive delay line having a flat,thin sheet of magnetostrictive material |
| GB1242085A (en) * | 1967-08-18 | 1971-08-11 | Matsushita Electric Industrial Co Ltd | A recording device |
| JPS4931107Y1 (fr) * | 1970-12-25 | 1974-08-22 | ||
| US3673582A (en) * | 1971-05-17 | 1972-06-27 | Rca Corp | Bubble domain sonic propagation device |
| NL7204639A (fr) * | 1972-04-07 | 1973-10-09 | ||
| US3868660A (en) * | 1973-04-10 | 1975-02-25 | Us Navy | Detector for cross-tie memory |
| US3868659A (en) * | 1973-04-10 | 1975-02-25 | Us Navy | Serial access memory using thin magnetic films |
| FR2239813B1 (fr) * | 1973-08-03 | 1978-04-21 | Commissariat Energie Atomique | |
| GB1439820A (en) * | 1973-09-12 | 1976-06-16 | Microwave & Electronic Syst | Group delay equaliser punched card reader |
| FR2254908B1 (fr) * | 1973-12-18 | 1976-10-08 | Thomson Csf | |
| US4403834A (en) * | 1979-07-23 | 1983-09-13 | Kley & Associates | Acoustic-wave device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2984826A (en) * | 1956-11-30 | 1961-05-16 | Thompson Ramo Wooldridge Inc | Electrical gating circuit |
| NL233342A (fr) * | 1957-11-18 |
-
1962
- 1962-08-27 US US219585A patent/US3129412A/en not_active Expired - Lifetime
- 1962-08-27 US US219656A patent/US3145372A/en not_active Expired - Lifetime
- 1962-11-30 US US241210A patent/US3138789A/en not_active Expired - Lifetime
-
1963
- 1963-08-21 DE DEJ24291A patent/DE1218519B/de active Pending
- 1963-08-22 BE BE636486D patent/BE636486A/fr unknown
- 1963-08-26 CH CH1054563A patent/CH411040A/de unknown
- 1963-08-26 FR FR945641A patent/FR1375166A/fr not_active Expired
- 1963-08-26 GB GB33643/63A patent/GB997777A/en not_active Expired
- 1963-10-30 NL NL299951D patent/NL299951A/nl unknown
- 1963-11-23 DE DEJ24781A patent/DE1228305B/de active Pending
- 1963-11-28 CH CH1454563A patent/CH445565A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3138789A (en) | 1964-06-23 |
| NL299951A (fr) | 1965-08-25 |
| US3129412A (en) | 1964-04-14 |
| CH445565A (de) | 1967-10-31 |
| US3145372A (en) | 1964-08-18 |
| FR1375166A (fr) | 1964-10-16 |
| BE636486A (fr) | 1963-12-16 |
| DE1218519B (de) | 1966-06-08 |
| GB997777A (en) | 1965-07-07 |
| DE1228305B (de) | 1966-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH411040A (de) | Dünnschichtspeicheranordnung und Verfahren für deren Betrieb | |
| DE2343398A1 (de) | Magnetische schaltung | |
| DE1960972A1 (de) | Speicheranordnung zum magnetischen Speichern einer Vielzahl von Datenbits und Verfahren zum Schreiben bzw. Lesen in bzw. aus solchen Speicheranordnungen bzw. Mehrfachbit-Mehrfachmagnetschicht-Speicherelementen solcher Speicheranordnungen | |
| WO1999062069A1 (fr) | Memoire magnetique a acces direct (mram) et procede de lecture/ecriture d'informations numeriques dans une telle memoire | |
| DE1236580B (de) | Angabenspeicher | |
| DE2411731A1 (de) | Magnetischer datenspeicher | |
| DE961102C (de) | Verfahren zum Speichern von kurzzeitigen elektrischen Impulsen mittels Spin Echo | |
| DE2412879A1 (de) | Einrichtung zur weiterleitung, speicherung und vernichtung magnetischer einzelwanddomaenen | |
| DE1947665C3 (de) | Speicheranordnung mit seriellem Zugriff | |
| CH669847A5 (fr) | ||
| DE1299026B (de) | Magnetischer Duennschicht-Datenspeicher | |
| DE1207437B (de) | Verfahren und Anordnung zum Lesen einer in einem Kondensator mit ferroelektrischem Dielektrikum gespeicherten Information | |
| DE1541933A1 (de) | Resonator sowie Vorrichtung und Verfahren zur Veraenderung dessen Frequenz | |
| DE1145228B (de) | Verfahren zum Einspeichern und zerstoerungsfreien Ablesen von binaeren Informationen in einen bzw. aus einem magnetostriktiven Speicher | |
| DE1279743B (de) | Zerstoerungsfrei ablesbare Speichervorrichtung und Verfahren zu ihrer Ansteuerung | |
| DE2156278B2 (fr) | ||
| DE2224105C3 (de) | Mit der Verschiebung magnetischer Bezirke arbeitende Einrichtung | |
| DE1067061B (de) | Speichersystem für die Speicherung von Binärinformationen | |
| DE1298138B (de) | Zerstoerungsfrei auslesbarer Magnetschichtspeicher | |
| DE2653485A1 (de) | Einzelwandmagnetdomaenen-schichtgitterweiterleitungsmittel | |
| DE2354120A1 (de) | Anordnung zur erzeugung einwandiger domaenen | |
| DE2441280B2 (de) | Massenspeicher fuer durch magnetische einzelwanddomaenen dargestellte information | |
| DE1236577B (de) | Verfahren und Vorrichtung zur nicht zerstoerenden Feststellung der Richtung einer Magnetisierung | |
| DE1303488B (de) | Dünnschichtspeicher | |
| DE1270113B (de) | Speicher mit mindestens einer Verzoegerungsleitung fuer elastische Wellen |