CH443838A - Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase - Google Patents

Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase

Info

Publication number
CH443838A
CH443838A CH744663A CH744663A CH443838A CH 443838 A CH443838 A CH 443838A CH 744663 A CH744663 A CH 744663A CH 744663 A CH744663 A CH 744663A CH 443838 A CH443838 A CH 443838A
Authority
CH
Switzerland
Prior art keywords
production
gas phase
volatile substances
crystalline layers
crystalline
Prior art date
Application number
CH744663A
Other languages
English (en)
Inventor
Nickl Julius Dr Dipl-Chem
Sirtl Erhard Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH443838A publication Critical patent/CH443838A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CH744663A 1962-06-14 1963-06-14 Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase CH443838A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES79912A DE1255635B (de) 1962-06-14 1962-06-14 Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus halbleitenden Stoffen

Publications (1)

Publication Number Publication Date
CH443838A true CH443838A (de) 1967-09-15

Family

ID=7508533

Family Applications (1)

Application Number Title Priority Date Filing Date
CH744663A CH443838A (de) 1962-06-14 1963-06-14 Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase

Country Status (5)

Country Link
US (1) US3235418A (de)
CH (1) CH443838A (de)
DE (1) DE1255635B (de)
GB (1) GB1035499A (de)
SE (1) SE317234B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229986B (de) * 1964-07-21 1966-12-08 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleiter-materials
US3610202A (en) * 1969-05-23 1971-10-05 Siemens Ag Epitactic apparatus
US3858548A (en) * 1972-08-16 1975-01-07 Corning Glass Works Vapor transport film deposition apparatus
FR2403646A1 (fr) 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
DE3304060C2 (de) * 1983-02-07 1986-03-20 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren und Vorrichtung zur Herstellung von Einkristallen aus der Gasphase
US4777022A (en) * 1984-08-28 1988-10-11 Stephen I. Boldish Epitaxial heater apparatus and process
JP5017950B2 (ja) * 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (de) * 1951-03-07 1900-01-01
US2685124A (en) * 1951-04-30 1954-08-03 Ohio Commw Eng Co Method for hi-vac alloying and coated product
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US2815462A (en) * 1953-05-19 1957-12-03 Electronique Sa Soc Gen Method of forming a film supported a short distance from a surface and cathode-ray tube incorporating such film
NL113118C (de) * 1954-05-18 1900-01-01
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US3014791A (en) * 1958-10-01 1961-12-26 Merck & Co Inc Pyrolysis apparatus
US3113889A (en) * 1959-12-31 1963-12-10 Space Technology Lab Inc Method of vacuum depositing superconductive metal coatings
US3085913A (en) * 1960-10-03 1963-04-16 Ibm Vacuum evaporation method
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Also Published As

Publication number Publication date
SE317234B (de) 1969-11-10
DE1255635B (de) 1967-12-07
US3235418A (en) 1966-02-15
GB1035499A (en) 1966-07-06

Similar Documents

Publication Publication Date Title
CH346864A (de) Verfahren zum Herstellen von Siliziumkarbidkristallen durch Sublimation
CH416576A (de) Verfahren zum Herstellen von Körpern aus hochgereinigtem Halbleitermaterial
CH480278A (de) Verfahren zum Herstellen kristalliner, hitzebeständiger Überzüge und Haftschichten
AT241102B (de) Verfahren zum Herstellen von Polyamidformkörpern
CH441239A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkristallen mit sehr hoher Reinheit
CH443838A (de) Verfahren zum Herstellen kristalliner Schichten aus schwer flüchtigen Stoffen aus der Gasphase
CH521163A (de) Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase auf Substratkörpern
CH449612A (de) Verfahren zur Herstellung organischer Zinnverbindungen
CH475030A (de) Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase
CH465562A (de) Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase
AT264953B (de) Verfahren zum Aufdampfen dünner Schichten
CH448674A (de) Verfahren zum schichtweisen, kristallinen Niederschlagen hochreinen spröden Materials
AT254947B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
SE219199C1 (sv) Förfarande för framställning av bis-triazinylaminostilbenföreningar
AT270749B (de) Verfahren zum Abscheiden von hochreinem kristallinem Material
CH413110A (de) Verfahren zum Herstellen von gesinterten Halbleiterkörpern
AT301326B (de) Verfahren zum gleichzeitigen Herstellen mehrerer Materialstreifen
CH459968A (de) Verfahren zur Gewinnung von Nitroverbindungen
CH396216A (de) Verfahren zum Herstellen von Schichten aus halbleitenden AiiiBv-Verbindungen
AT244078B (de) Verfahren zum Herstellen von Magnetogrammträgern
CH434214A (de) Verfahren zum Herstellen von hochreinem Halbleitermaterial durch Abscheidung aus der Gasphase
CH449010A (de) Verfahren zur Herstellung organischer Borverbindungen
AT257692B (de) Verfahren zum Herstellen von dünnen Schichten aus hochreinen Materialien
CH441248A (de) Verfahren zum Herstellen von hochreinem Siliziumkarbid aus der Gasphase durch thermische Zersetzung
CH466922A (de) Verfahren zum Herstellen von Formkörpern aus Elastomeren