CH465562A - Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase - Google Patents
Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der GasphaseInfo
- Publication number
- CH465562A CH465562A CH657264A CH657264A CH465562A CH 465562 A CH465562 A CH 465562A CH 657264 A CH657264 A CH 657264A CH 657264 A CH657264 A CH 657264A CH 465562 A CH465562 A CH 465562A
- Authority
- CH
- Switzerland
- Prior art keywords
- deposition
- semiconductor material
- gas phase
- crystalline semiconductor
- crystalline
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/12—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/052—Face to face deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES86488A DE1273484B (de) | 1963-08-01 | 1963-08-01 | Verfahren zum Herstellen von reinem, gegebenenfalls dotiertem Halbleitermaterial mittels Transportreaktionen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH465562A true CH465562A (de) | 1968-11-30 |
Family
ID=7513064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH657264A CH465562A (de) | 1963-08-01 | 1964-05-20 | Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3290181A (de) |
| CH (1) | CH465562A (de) |
| DE (1) | DE1273484B (de) |
| GB (1) | GB1076465A (de) |
| NL (1) | NL6408610A (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3519492A (en) * | 1967-12-21 | 1970-07-07 | Dow Chemical Co | Process for the production of pure semiconductor materials |
| DE1901319A1 (de) * | 1969-01-11 | 1970-08-06 | Siemens Ag | Verfahren zur Herstellung von hochreinem Galliumarsenid |
| FR2454184A1 (fr) * | 1979-04-10 | 1980-11-07 | Chemla Daniel | Structure de type isolant-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et l'isolant un sulfure, et procedes de fabrication de cette structure |
| US5328549A (en) * | 1980-04-10 | 1994-07-12 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| US5362682A (en) * | 1980-04-10 | 1994-11-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| US5273616A (en) * | 1980-04-10 | 1993-12-28 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| FR2732005B1 (fr) * | 1995-03-22 | 1997-06-13 | Rhone Poulenc Chimie | Procede de preparation de sulfures de terres rares a partir d'halogenures |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99536C (de) * | 1951-03-07 | 1900-01-01 | ||
| FR1320985A (fr) * | 1961-03-02 | 1963-03-15 | Monsanto Chemicals | Procédé de production de composés monocristallins |
-
1963
- 1963-08-01 DE DES86488A patent/DE1273484B/de not_active Withdrawn
-
1964
- 1964-05-20 CH CH657264A patent/CH465562A/de unknown
- 1964-07-28 NL NL6408610A patent/NL6408610A/xx unknown
- 1964-07-30 US US386258A patent/US3290181A/en not_active Expired - Lifetime
- 1964-08-04 GB GB31409/64A patent/GB1076465A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6408610A (de) | 1965-02-02 |
| US3290181A (en) | 1966-12-06 |
| DE1273484B (de) | 1968-07-25 |
| GB1076465A (en) | 1967-07-19 |
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