CH465562A - Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase - Google Patents

Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase

Info

Publication number
CH465562A
CH465562A CH657264A CH657264A CH465562A CH 465562 A CH465562 A CH 465562A CH 657264 A CH657264 A CH 657264A CH 657264 A CH657264 A CH 657264A CH 465562 A CH465562 A CH 465562A
Authority
CH
Switzerland
Prior art keywords
deposition
semiconductor material
gas phase
crystalline semiconductor
crystalline
Prior art date
Application number
CH657264A
Other languages
English (en)
Inventor
Erhard Dr Sirtl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH465562A publication Critical patent/CH465562A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12Sulfides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/052Face to face deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/135Removal of substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/933Germanium or silicon or Ge-Si on III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH657264A 1963-08-01 1964-05-20 Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase CH465562A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES86488A DE1273484B (de) 1963-08-01 1963-08-01 Verfahren zum Herstellen von reinem, gegebenenfalls dotiertem Halbleitermaterial mittels Transportreaktionen

Publications (1)

Publication Number Publication Date
CH465562A true CH465562A (de) 1968-11-30

Family

ID=7513064

Family Applications (1)

Application Number Title Priority Date Filing Date
CH657264A CH465562A (de) 1963-08-01 1964-05-20 Verfahren zum Abscheiden von kristallinem Halbleitermaterial aus der Gasphase

Country Status (5)

Country Link
US (1) US3290181A (de)
CH (1) CH465562A (de)
DE (1) DE1273484B (de)
GB (1) GB1076465A (de)
NL (1) NL6408610A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519492A (en) * 1967-12-21 1970-07-07 Dow Chemical Co Process for the production of pure semiconductor materials
DE1901319A1 (de) * 1969-01-11 1970-08-06 Siemens Ag Verfahren zur Herstellung von hochreinem Galliumarsenid
FR2454184A1 (fr) * 1979-04-10 1980-11-07 Chemla Daniel Structure de type isolant-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et l'isolant un sulfure, et procedes de fabrication de cette structure
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
FR2732005B1 (fr) * 1995-03-22 1997-06-13 Rhone Poulenc Chimie Procede de preparation de sulfures de terres rares a partir d'halogenures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (de) * 1951-03-07 1900-01-01
FR1320985A (fr) * 1961-03-02 1963-03-15 Monsanto Chemicals Procédé de production de composés monocristallins

Also Published As

Publication number Publication date
NL6408610A (de) 1965-02-02
US3290181A (en) 1966-12-06
DE1273484B (de) 1968-07-25
GB1076465A (en) 1967-07-19

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