CH460007A - Verfahren zur Herstellung neuer Isochinolin-Derivate - Google Patents

Verfahren zur Herstellung neuer Isochinolin-Derivate

Info

Publication number
CH460007A
CH460007A CH824468A CH824468A CH460007A CH 460007 A CH460007 A CH 460007A CH 824468 A CH824468 A CH 824468A CH 824468 A CH824468 A CH 824468A CH 460007 A CH460007 A CH 460007A
Authority
CH
Switzerland
Prior art keywords
preparation
isoquinoline derivatives
new isoquinoline
new
derivatives
Prior art date
Application number
CH824468A
Other languages
German (de)
English (en)
Inventor
Hans Dr Ott
Original Assignee
Sandoz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Application filed by Sandoz Ag filed Critical Sandoz Ag
Priority claimed from US478351A external-priority patent/US3383760A/en
Publication of CH460007A publication Critical patent/CH460007A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Rectifiers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thyristors (AREA)
CH824468A 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate CH460007A (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
CH460007A true CH460007A (de) 1968-07-31

Family

ID=27541415

Family Applications (5)

Application Number Title Priority Date Filing Date
CH824468A CH460007A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH1112065A CH460031A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824368A CH460033A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824568A CH460008A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH1154865A CH466298A (de) 1964-08-07 1965-08-17 Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten

Family Applications After (4)

Application Number Title Priority Date Filing Date
CH1112065A CH460031A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824368A CH460033A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Diazepin-Derivate
CH824568A CH460008A (de) 1964-08-07 1965-08-06 Verfahren zur Herstellung neuer Isochinolin-Derivate
CH1154865A CH466298A (de) 1964-08-07 1965-08-17 Verfahren zur Herstellung von neuen Isochinolobenzodiazepin-Derivaten

Country Status (17)

Country Link
BE (1) BE668687A (mo)
BG (1) BG17566A3 (mo)
BR (4) BR6572393D0 (mo)
CA (1) CA953297A (mo)
CH (5) CH460007A (mo)
CY (1) CY613A (mo)
DE (3) DE1514363B1 (mo)
ES (1) ES337005A1 (mo)
FI (1) FI46968C (mo)
FR (2) FR5364M (mo)
GB (7) GB1084598A (mo)
IL (1) IL24214A (mo)
MC (1) MC542A1 (mo)
MY (1) MY7100223A (mo)
NL (4) NL6510287A (mo)
NO (1) NO120580B (mo)
SE (5) SE312863B (mo)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (mo) * 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated side surfaces and process for their production.
US5401690A (en) * 1993-07-08 1995-03-28 Goodark Electronic Corp. Method for making circular diode chips through glass passivation
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL120075C (mo) * 1960-02-04
NL284599A (mo) * 1961-05-26 1900-01-01

Also Published As

Publication number Publication date
GB1126352A (en) 1968-09-05
ES337005A1 (es) 1968-01-16
FR4985M (mo) 1967-04-10
CA953297A (en) 1974-08-20
DE1620295C3 (de) 1975-05-22
SE322227B (mo) 1970-04-06
SE350500B (mo) 1972-10-30
BR6572394D0 (pt) 1973-08-14
FI46968B (mo) 1973-05-02
DE1620295A1 (de) 1970-02-19
GB1126353A (en) 1968-09-05
CY613A (en) 1971-10-01
DE1564537B2 (de) 1973-01-25
NL129867C (mo) 1900-01-01
BG17566A3 (bg) 1973-11-10
BR6681707D0 (pt) 1973-09-06
BE668687A (mo) 1966-02-23
CH460008A (de) 1968-07-31
DE1514363B1 (de) 1970-06-18
GB1112334A (en) 1968-05-01
NL6607936A (mo) 1966-12-12
FI46968C (fi) 1973-08-10
IL24214A (en) 1969-06-25
SE345040B (mo) 1972-05-08
SE351641B (mo) 1972-12-04
CH460031A (de) 1968-07-31
NO120580B (mo) 1970-11-09
CH466298A (de) 1968-12-15
BR6572393D0 (pt) 1973-08-14
NL6611133A (mo) 1967-02-10
CH460033A (de) 1968-07-31
NL6510287A (mo) 1966-02-08
GB1133376A (en) 1968-11-13
GB1084598A (en) 1967-09-27
MY7100223A (en) 1971-12-31
MC542A1 (fr) 1966-04-06
DE1564537A1 (de) 1970-07-30
DE1620294A1 (de) 1970-02-05
FR5364M (mo) 1967-09-11
SE312863B (mo) 1969-07-28
GB1120488A (en) 1968-07-17
GB1126354A (en) 1968-09-05
BR6680263D0 (pt) 1973-03-01
DE1620295B2 (de) 1974-10-03

Similar Documents

Publication Publication Date Title
CH538494A (de) Verfahren zur Herstellung neuer Homopyrimidazol-Derivate
AT262973B (de) Verfahren zur Herstellung neuer substituierter Phenylacethydroxamsäuren
CH489513A (de) Verfahren zur Herstellung neuer Diazacycloalkane
CH468384A (de) Verfahren zur Herstellung neuer Tetrahydroisochinolin-Verbindungen
CH460008A (de) Verfahren zur Herstellung neuer Isochinolin-Derivate
CH482724A (de) Verfahren zur Herstellung neuer Aminooxysilane
CH472390A (de) Verfahren zur Herstellung neuer Benzolsulfonylharnstoffe
CH471117A (de) Verfahren zur Herstellung neuer Benzolsulfonylharnstoffe
CH447176A (de) Verfahren zur Herstellung neuer Phenothiazin-Derivate
CH470346A (de) Verfahren zur Herstellung neuer substituierter Aryloxy-2-hydroxy-3-aminopropane
CH457450A (de) Verfahren zur Herstellung neuer 2-Methyl-3-phenyl-3H-4-chinazolone
CH467257A (de) Verfahren zur Herstellung neuer Isatin-B-Thiosemicarbazone
CH462834A (de) Verfahren zur Herstellung neuer 6-Hydrazino-pyridazin-Derivate
CH459193A (de) Verfahren zur Herstellung neuer 1-Methyl- 1-5a-androsten-17B-ol-3-on-17-ester
CH460778A (de) Verfahren zur Herstellung von Tetrahydroisochinolin-Derivaten
CH481890A (de) Verfahren zur Herstellung neuer Benzolsulfonylharnstoffe
AT267775B (de) Verfahren zur Herstellung neuer des-A-5-Oxo-10-hydroxymethylgonadiene
CH473120A (de) Verfahren zur Herstellung neuer 1-Cycloalkenylpiperidine
CH468386A (de) Verfahren zur Herstellung neuer Ergolen-Derivate
AT300806B (de) Verfahren zur Herstellung neuer Piperodin-Derivate
CH492720A (de) Verfahren zur Herstellung neuer 2-Methyl-3-phenyl-3H-4-chinazolone
CH466469A (de) Verfahren zur Herstellung neuer Cinnamoylaminoanthrachinone
CH452534A (de) Verfahren zur Herstellung neuer Imidazolderivate
AT259559B (de) Verfahren zur Herstellung neuer Dihydropyranderivate
CH449013A (de) Verfahren zur Herstellung neuer Isochinolinverbindungen