CH486778A - Integrierte monolithische Schaltung - Google Patents

Integrierte monolithische Schaltung

Info

Publication number
CH486778A
CH486778A CH132369A CH132369A CH486778A CH 486778 A CH486778 A CH 486778A CH 132369 A CH132369 A CH 132369A CH 132369 A CH132369 A CH 132369A CH 486778 A CH486778 A CH 486778A
Authority
CH
Switzerland
Prior art keywords
monolithic circuit
integrated monolithic
integrated
circuit
monolithic
Prior art date
Application number
CH132369A
Other languages
English (en)
Inventor
Kurt Wiedmann Siegfried
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH486778A publication Critical patent/CH486778A/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/012Modifications of generator to improve response time or to decrease power consumption
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/43Resistors having PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
CH132369A 1968-03-01 1969-01-29 Integrierte monolithische Schaltung CH486778A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ0035814 1968-03-01

Publications (1)

Publication Number Publication Date
CH486778A true CH486778A (de) 1970-02-28

Family

ID=7205544

Family Applications (1)

Application Number Title Priority Date Filing Date
CH132369A CH486778A (de) 1968-03-01 1969-01-29 Integrierte monolithische Schaltung

Country Status (4)

Country Link
JP (1) JPS4824337B1 (de)
BE (1) BE726823A (de)
CH (1) CH486778A (de)
SE (1) SE357116B (de)

Also Published As

Publication number Publication date
JPS4824337B1 (de) 1973-07-20
SE357116B (de) 1973-06-12
BE726823A (fr) 1969-06-16

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Legal Events

Date Code Title Description
PL Patent ceased