FR2064080A7 - High resistance silicon-carbide diodes - Google Patents

High resistance silicon-carbide diodes

Info

Publication number
FR2064080A7
FR2064080A7 FR7035321A FR7035321A FR2064080A7 FR 2064080 A7 FR2064080 A7 FR 2064080A7 FR 7035321 A FR7035321 A FR 7035321A FR 7035321 A FR7035321 A FR 7035321A FR 2064080 A7 FR2064080 A7 FR 2064080A7
Authority
FR
France
Prior art keywords
epitaxial layer
opposite
junction
deposition
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7035321A
Other languages
English (en)
French (fr)
Other versions
FR2064080B3 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, Brown Boveri und Cie AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Application granted granted Critical
Publication of FR2064080A7 publication Critical patent/FR2064080A7/fr
Publication of FR2064080B3 publication Critical patent/FR2064080B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
FR7035321A 1969-10-01 1970-09-30 High resistance silicon-carbide diodes Expired FR2064080A7 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1477369A CH510328A (de) 1969-10-01 1969-10-01 Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden

Publications (2)

Publication Number Publication Date
FR2064080A7 true FR2064080A7 (en) 1971-07-16
FR2064080B3 FR2064080B3 (de) 1973-06-08

Family

ID=4403709

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7035321A Expired FR2064080A7 (en) 1969-10-01 1970-09-30 High resistance silicon-carbide diodes

Country Status (3)

Country Link
CH (1) CH510328A (de)
DE (1) DE1956011A1 (de)
FR (1) FR2064080A7 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
JPH06333892A (ja) * 1993-03-22 1994-12-02 Fuji Electric Corp Res & Dev Ltd 電子デバイス
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid

Also Published As

Publication number Publication date
FR2064080B3 (de) 1973-06-08
CH510328A (de) 1971-07-15
DE1956011A1 (de) 1971-04-15

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Legal Events

Date Code Title Description
ST Notification of lapse