CH637788A5 - Integrierte logische schaltung. - Google Patents

Integrierte logische schaltung. Download PDF

Info

Publication number: CH637788A5
Authority: CH; Switzerland
Prior art keywords: zone; base; conductivity type; transistor; collector
Prior art date: 1977-11-17

Application number

CH1170278A

Other languages

German (de)

English (en)

Inventor

Jan Lohstroh

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-11-17

Filing date

1978-11-14

Publication date

1983-08-15

1977-11-17 Priority claimed from NL7712649A external-priority patent/NL7712649A/xx

1978-11-14 Application filed by Philips Nv filed Critical Philips Nv

1983-08-15 Publication of CH637788A5 publication Critical patent/CH637788A5/de

Links

239000004020 conductor Substances 0.000 claims description 47
239000004065 semiconductor Substances 0.000 claims description 40
230000000295 complement effect Effects 0.000 claims description 30
239000000758 substrate Substances 0.000 claims description 26
239000011810 insulating material Substances 0.000 claims description 17
238000003860 storage Methods 0.000 claims description 13
239000002800 charge carrier Substances 0.000 claims description 12
238000002955 isolation Methods 0.000 claims description 11
230000007704 transition Effects 0.000 claims description 11
239000000463 material Substances 0.000 claims description 10
230000015572 biosynthetic process Effects 0.000 claims 1
239000010410 layer Substances 0.000 description 51
230000008878 coupling Effects 0.000 description 31
238000010168 coupling process Methods 0.000 description 31
238000005859 coupling reaction Methods 0.000 description 31
238000009413 insulation Methods 0.000 description 10
230000002349 favourable effect Effects 0.000 description 8
238000009792 diffusion process Methods 0.000 description 7
230000000694 effects Effects 0.000 description 7
238000012856 packing Methods 0.000 description 7
239000000047 product Substances 0.000 description 7
229910021332 silicide Inorganic materials 0.000 description 7
239000002344 surface layer Substances 0.000 description 7
238000004519 manufacturing process Methods 0.000 description 6
238000001465 metallisation Methods 0.000 description 5
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
229910052782 aluminium Inorganic materials 0.000 description 4
239000012774 insulation material Substances 0.000 description 4
238000000034 method Methods 0.000 description 4
229910052719 titanium Inorganic materials 0.000 description 4
239000010936 titanium Substances 0.000 description 4
230000008901 benefit Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000004048 modification Effects 0.000 description 3
229920006395 saturated elastomer Polymers 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000012190 activator Substances 0.000 description 2
230000004888 barrier function Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
230000035515 penetration Effects 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
238000012545 processing Methods 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
238000011282 treatment Methods 0.000 description 2
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
241000120694 Thestor Species 0.000 description 1
229910004339 Ti-Si Inorganic materials 0.000 description 1
229910010978 Ti—Si Inorganic materials 0.000 description 1
230000003321 amplification Effects 0.000 description 1
238000013459 approach Methods 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
239000013065 commercial product Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000003754 machining Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
229910021339 platinum silicide Inorganic materials 0.000 description 1
UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
230000008569 process Effects 0.000 description 1
108090000623 proteins and genes Proteins 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000007787 solid Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
238000012360 testing method Methods 0.000 description 1
MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
238000012546 transfer Methods 0.000 description 1
239000002966 varnish Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs

Landscapes

Bipolar Integrated Circuits (AREA)
Logic Circuits (AREA)
Bipolar Transistors (AREA)
Electronic Switches (AREA)

CH1170278A 1977-11-17 1978-11-14 Integrierte logische schaltung. CH637788A5 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL7712649A NL7712649A (nl)	1977-11-17	1977-11-17	Geientegreerde schakeling.
NL7800407A NL7800407A (nl)	1977-11-17	1978-01-13	Geientegreerde logische schakeling.

Publications (1)

Publication Number	Publication Date
CH637788A5 true CH637788A5 (de)	1983-08-15

Family

ID=26645363

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH1170278A CH637788A5 (de)	1977-11-17	1978-11-14	Integrierte logische schaltung.

Country Status (10)

Country	Link
JP (1)	JPS5478988A (pt)
BR (1)	BR7807497A (pt)
CA (1)	CA1129973A (pt)
CH (1)	CH637788A5 (pt)
DE (1)	DE2848632C2 (pt)
ES (1)	ES475105A1 (pt)
FR (1)	FR2409599A1 (pt)
GB (1)	GB2008318B (pt)
IT (1)	IT1100262B (pt)
NL (1)	NL7800407A (pt)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR3166254A1 (fr)	2024-09-10	2026-03-13	Stellantis Auto Sas	Machine electrique avec rotor comprenant des aimants permanents a flux magnetique variable

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL161923C (nl) *	1969-04-18	1980-03-17	Philips Nv	Halfgeleiderinrichting.
GB1490631A (en) *	1975-01-10	1977-11-02	Plessey Co Ltd	Transistor arrangement having low charge storage

1978
- 1978-01-13 NL NL7800407A patent/NL7800407A/xx not_active Application Discontinuation
- 1978-11-09 DE DE2848632A patent/DE2848632C2/de not_active Expired
- 1978-11-09 CA CA316,085A patent/CA1129973A/en not_active Expired
- 1978-11-14 GB GB7844334A patent/GB2008318B/en not_active Expired
- 1978-11-14 CH CH1170278A patent/CH637788A5/de not_active IP Right Cessation
- 1978-11-14 IT IT29768/78A patent/IT1100262B/it active
- 1978-11-14 BR BR7807497A patent/BR7807497A/pt unknown
- 1978-11-15 ES ES475105A patent/ES475105A1/es not_active Expired
- 1978-11-17 FR FR7832509A patent/FR2409599A1/fr active Granted
- 1978-11-17 JP JP14215478A patent/JPS5478988A/ja active Granted

Also Published As

Publication number	Publication date
NL7800407A (nl)	1979-05-21
ES475105A1 (es)	1979-04-01
CA1129973A (en)	1982-08-17
FR2409599B1 (pt)	1985-01-18
IT7829768A0 (it)	1978-11-14
GB2008318B (en)	1982-03-31
GB2008318A (en)	1979-05-31
JPS5478988A (en)	1979-06-23
IT1100262B (it)	1985-09-28
DE2848632C2 (de)	1985-12-19
BR7807497A (pt)	1979-07-17
FR2409599A1 (fr)	1979-06-15
DE2848632A1 (de)	1979-05-23
JPS5719866B2 (pt)	1982-04-24

Legal Events

Date	Code	Title	Description
1993-07-30	PL	Patent ceased
2024-10-31	PL	Patent ceased

Publication	Publication Date	Title
DE3720156C2 (pt)	1990-04-19
DE2266040C2 (pt)	1991-08-08
DE19632110C2 (de)	1998-06-18	Halbleitervorrichtung und Verfahren zur Herstellung derselben
DE10340131B4 (de)	2005-12-01	Halbleiterleistungsbauteil mit Ladungskompensationsstruktur und monolithisch integrierter Schaltung, sowie Verfahren zu dessen Herstellung
DE2334405C3 (de)	1987-01-22	Hochintegrierte Halbleiterschaltung
DE2212168A1 (de)	1973-09-20	Monolithisch integrierte halbleiterstruktur
DE2443171C2 (de)	1983-08-18	Integrierte Schaltung
DE69017348T2 (de)	1995-11-02	Thyristor und Verfahren zu dessen Herstellung.
DE3737790C2 (pt)	1990-12-20
DE19914697A1 (de)	1999-10-14	Verarmungs-MOS-Halbleiterbauelement und MOS-Leistungs-IC
DE69418638T2 (de)	1999-09-30	Halbleiterbauelement vom MIS-Typ
DE2939193A1 (de)	1980-04-30	Statischer induktionstransistor und eine diesen transistor verwendende schaltung
DE4333618A1 (de)	1994-04-07	Schottky-Gleichrichter
DE69320033T2 (de)	1998-12-03	Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
DE102007055290B4 (de)	2011-09-22	Halbleitervorrichtung
DE2633569C2 (pt)	1987-05-27
DE1564218A1 (de)	1970-01-08	Verfahren zur Herstellung von Transistoren
DE2850864A1 (de)	1979-05-31	Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung
DE2730373A1 (de)	1978-01-19	Integrierte halbleiter-logikschaltung
DE2753320C2 (de)	1984-08-30	Thyristor
DE19534388A1 (de)	1996-03-21	IGBT-Transistorbauteil
DE2904254A1 (de)	1979-08-16	Halbleiteranordnung
DE4227840C2 (de)	1997-06-12	MOS-Leistungsschalttransistor
DE2848576C2 (pt)	1988-08-04
WO1999041780A1 (de)	1999-08-19	Halbleiterbauelement mit struktur zur vermeidung von querströmen