CA1129973A - Integrated logic circuit - Google Patents

Integrated logic circuit

Info

Publication number: CA1129973A
Authority: CA; Canada
Prior art keywords: zone; base; conductivity type; transistor; collector
Prior art date: 1977-11-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA316,085A

Other languages

English (en)

French (fr)

Inventor

Jan Lohstroh

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-11-17

Filing date

1978-11-09

Publication date

1982-08-17

1977-11-17 Priority claimed from NL7712649A external-priority patent/NL7712649A/xx

1978-11-09 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1982-08-17 Application granted granted Critical

1982-08-17 Publication of CA1129973A publication Critical patent/CA1129973A/en

Status Expired legal-status Critical Current

Links

230000000295 complement effect Effects 0.000 claims abstract description 27
238000003860 storage Methods 0.000 claims abstract description 16
239000004020 conductor Substances 0.000 claims description 55
239000004065 semiconductor Substances 0.000 claims description 41
239000000758 substrate Substances 0.000 claims description 26
238000002955 isolation Methods 0.000 claims description 23
239000011810 insulating material Substances 0.000 claims description 19
239000002800 charge carrier Substances 0.000 claims description 13
239000000969 carrier Substances 0.000 abstract description 2
239000010410 layer Substances 0.000 description 52
230000008878 coupling Effects 0.000 description 29
238000010168 coupling process Methods 0.000 description 29
238000005859 coupling reaction Methods 0.000 description 29
230000002349 favourable effect Effects 0.000 description 8
239000000047 product Substances 0.000 description 8
239000000463 material Substances 0.000 description 7
229910021332 silicide Inorganic materials 0.000 description 7
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
238000009792 diffusion process Methods 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 6
238000012856 packing Methods 0.000 description 6
229920006395 saturated elastomer Polymers 0.000 description 6
239000002344 surface layer Substances 0.000 description 6
238000000034 method Methods 0.000 description 5
239000004411 aluminium Substances 0.000 description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
229910052782 aluminium Inorganic materials 0.000 description 4
230000008901 benefit Effects 0.000 description 4
238000001465 metallisation Methods 0.000 description 4
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
230000004888 barrier function Effects 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000010936 titanium Substances 0.000 description 3
229910052719 titanium Inorganic materials 0.000 description 3
238000011282 treatment Methods 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000012190 activator Substances 0.000 description 2
238000007792 addition Methods 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
229910052737 gold Inorganic materials 0.000 description 2
239000010931 gold Substances 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000035515 penetration Effects 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
241000905957 Channa melasoma Species 0.000 description 1
101100536354 Drosophila melanogaster tant gene Proteins 0.000 description 1
241000234435 Lilium Species 0.000 description 1
208000003251 Pruritus Diseases 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
244000166490 Tetrameles nudiflora Species 0.000 description 1
229910004339 Ti-Si Inorganic materials 0.000 description 1
229910010978 Ti—Si Inorganic materials 0.000 description 1
230000009471 action Effects 0.000 description 1
230000003190 augmentative effect Effects 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
230000002860 competitive effect Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
230000007803 itching Effects 0.000 description 1
238000005304 joining Methods 0.000 description 1
239000004922 lacquer Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
VOVZXURTCKPRDQ-CQSZACIVSA-N n-[4-[chloro(difluoro)methoxy]phenyl]-6-[(3r)-3-hydroxypyrrolidin-1-yl]-5-(1h-pyrazol-5-yl)pyridine-3-carboxamide Chemical compound C1[C@H](O)CCN1C1=NC=C(C(=O)NC=2C=CC(OC(F)(F)Cl)=CC=2)C=C1C1=CC=NN1 VOVZXURTCKPRDQ-CQSZACIVSA-N 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
229910021339 platinum silicide Inorganic materials 0.000 description 1
UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
229920000136 polysorbate Polymers 0.000 description 1
230000008569 process Effects 0.000 description 1
229910052703 rhodium Inorganic materials 0.000 description 1
239000010948 rhodium Substances 0.000 description 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000007787 solid Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs

Landscapes

Bipolar Integrated Circuits (AREA)
Logic Circuits (AREA)
Bipolar Transistors (AREA)
Electronic Switches (AREA)

CA316,085A 1977-11-17 1978-11-09 Integrated logic circuit Expired CA1129973A (en)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
NL7712649		1977-11-17
NL7712649A NL7712649A (nl)	1977-11-17	1977-11-17	Geientegreerde schakeling.
NL7800407		1978-01-13
NL7800407A NL7800407A (nl)	1977-11-17	1978-01-13	Geientegreerde logische schakeling.

Publications (1)

Publication Number	Publication Date
CA1129973A true CA1129973A (en)	1982-08-17

Family

ID=26645363

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA316,085A Expired CA1129973A (en)	1977-11-17	1978-11-09	Integrated logic circuit

Country Status (10)

Country	Link
JP (1)	JPS5478988A (pt)
BR (1)	BR7807497A (pt)
CA (1)	CA1129973A (pt)
CH (1)	CH637788A5 (pt)
DE (1)	DE2848632C2 (pt)
ES (1)	ES475105A1 (pt)
FR (1)	FR2409599A1 (pt)
GB (1)	GB2008318B (pt)
IT (1)	IT1100262B (pt)
NL (1)	NL7800407A (pt)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR3166254A1 (fr)	2024-09-10	2026-03-13	Stellantis Auto Sas	Machine electrique avec rotor comprenant des aimants permanents a flux magnetique variable

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL161923C (nl) *	1969-04-18	1980-03-17	Philips Nv	Halfgeleiderinrichting.
GB1490631A (en) *	1975-01-10	1977-11-02	Plessey Co Ltd	Transistor arrangement having low charge storage

1978
- 1978-01-13 NL NL7800407A patent/NL7800407A/xx not_active Application Discontinuation
- 1978-11-09 DE DE2848632A patent/DE2848632C2/de not_active Expired
- 1978-11-09 CA CA316,085A patent/CA1129973A/en not_active Expired
- 1978-11-14 GB GB7844334A patent/GB2008318B/en not_active Expired
- 1978-11-14 CH CH1170278A patent/CH637788A5/de not_active IP Right Cessation
- 1978-11-14 IT IT29768/78A patent/IT1100262B/it active
- 1978-11-14 BR BR7807497A patent/BR7807497A/pt unknown
- 1978-11-15 ES ES475105A patent/ES475105A1/es not_active Expired
- 1978-11-17 FR FR7832509A patent/FR2409599A1/fr active Granted
- 1978-11-17 JP JP14215478A patent/JPS5478988A/ja active Granted

Also Published As

Publication number	Publication date
NL7800407A (nl)	1979-05-21
ES475105A1 (es)	1979-04-01
FR2409599B1 (pt)	1985-01-18
CH637788A5 (de)	1983-08-15
IT7829768A0 (it)	1978-11-14
GB2008318B (en)	1982-03-31
GB2008318A (en)	1979-05-31
JPS5478988A (en)	1979-06-23
IT1100262B (it)	1985-09-28
DE2848632C2 (de)	1985-12-19
BR7807497A (pt)	1979-07-17
FR2409599A1 (fr)	1979-06-15
DE2848632A1 (de)	1979-05-23
JPS5719866B2 (pt)	1982-04-24

Legal Events

Date	Code	Title	Description
1999-08-17	MKEX	Expiry

Publication	Publication Date	Title
US5371401A (en)	1994-12-06	Semiconductor integrated circuit fully isolated from the substrate
US4056810A (en)	1977-11-01	Integrated injection logic memory circuit
US4412142A (en)	1983-10-25	Integrated circuit incorporating low voltage and high voltage semiconductor devices
JP4006398B2 (ja)	2007-11-14	静電放電保護デバイスを有する集積回路
US5416354A (en)	1995-05-16	Inverted epitaxial process semiconductor devices
US4007385A (en)	1977-02-08	Serially-connected circuit groups for intergrated injection logic
US4156246A (en)	1979-05-22	Combined ohmic and Schottky output transistors for logic circuit
US4399450A (en)	1983-08-16	ROM With poly-Si to mono-Si diodes
JPH07297373A (ja)	1995-11-10	誘導性負荷要素に対する集積ドライバ回路装置
EP0043007B1 (en)	1985-10-02	Saturation-limited bipolar transistor circuit structure and method of making
KR930001220B1 (ko)	1993-02-22	반도체 집적회로 장치 및 그의 제조방법
US3868722A (en)	1975-02-25	Semiconductor device having at least two transistors and method of manufacturing same
US4631570A (en)	1986-12-23	Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection
US4482911A (en)	1984-11-13	Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes
Hewlett	1975	Schottky I/sup 2/L
CA1134054A (en)	1982-10-19	Integrated circuit
US4475280A (en)	1984-10-09	Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices
US4812891A (en)	1989-03-14	Bipolar lateral pass-transistor for CMOS circuits
US4595942A (en)	1986-06-17	Integrated circuit
CA1129973A (en)	1982-08-17	Integrated logic circuit
US4243896A (en)	1981-01-06	I2 L Circuit with auxiliary transistor
US4388636A (en)	1983-06-14	Static memory cell and memory constructed from such cells
US4446611A (en)	1984-05-08	Method of making a saturation-limited bipolar transistor device
US4987469A (en)	1991-01-22	Lateral high-voltage transistor suitable for use in emitter followers
US4577123A (en)	1986-03-18	Integrated logic circuit having collector node with pull-up and clamp