CN100385696C - 外延薄膜 - Google Patents

外延薄膜 Download PDF

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Publication number
CN100385696C
CN100385696C CNB008045860A CN00804586A CN100385696C CN 100385696 C CN100385696 C CN 100385696C CN B008045860 A CNB008045860 A CN B008045860A CN 00804586 A CN00804586 A CN 00804586A CN 100385696 C CN100385696 C CN 100385696C
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CN
China
Prior art keywords
epitaxial
ccvd
deposited
thin films
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008045860A
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English (en)
Chinese (zh)
Other versions
CN1526172A (zh
Inventor
A·T·亨特
G·德什潘德
D·T·-J·J·卡振斯
W·-Y·林
S·S·肖普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microcoating Technologies Inc
Original Assignee
Microcoating Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microcoating Technologies Inc filed Critical Microcoating Technologies Inc
Publication of CN1526172A publication Critical patent/CN1526172A/zh
Application granted granted Critical
Publication of CN100385696C publication Critical patent/CN100385696C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inert Electrodes (AREA)
  • Fuel Cell (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Ceramic Capacitors (AREA)
CNB008045860A 1999-01-12 2000-01-12 外延薄膜 Expired - Fee Related CN100385696C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11551999P 1999-01-12 1999-01-12
US60/115,519 1999-01-12

Publications (2)

Publication Number Publication Date
CN1526172A CN1526172A (zh) 2004-09-01
CN100385696C true CN100385696C (zh) 2008-04-30

Family

ID=22361922

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008045860A Expired - Fee Related CN100385696C (zh) 1999-01-12 2000-01-12 外延薄膜

Country Status (6)

Country Link
EP (1) EP1145252A2 (fr)
JP (2) JP2002535224A (fr)
CN (1) CN100385696C (fr)
AU (1) AU774828B2 (fr)
CA (1) CA2359710C (fr)
WO (1) WO2000042621A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005531885A (ja) * 2002-04-23 2005-10-20 フラウンホフェル−ゲゼルシャフト ツ−ル フォルダルング デル アンゲバンドテン フォルシュング エー．ファウ． ナノ多孔性薄層電極と構造化電解質との複合物を含んでなる高温固体電解質燃料電池
CN100365740C (zh) * 2006-04-27 2008-01-30 西南交通大学 一种高温超导涂层导体的缓冲层
DE102007024166B4 (de) 2007-05-24 2011-01-05 Zenergy Power Gmbh Verfahren zum Bearbeiten eines Metallsubstrats und Verwendung dessen für einen Hochtemperatur-Supraleiter
JP5376500B2 (ja) * 2008-12-04 2013-12-25 株式会社ノリタケカンパニーリミテド 酸素イオン伝導性セラミック膜材およびその製造方法
CN102039264A (zh) * 2009-10-21 2011-05-04 正峰新能源股份有限公司 非真空铜铟镓硒薄膜密实方法
EP2553741B1 (fr) * 2010-03-26 2014-10-29 Ohio University Élaboration d'un supraconducteur moléculaire ultra-mince par transfert de charges
EP2426684A1 (fr) * 2010-09-02 2012-03-07 Mitsubishi Materials Corporation Composition de formation de film mince diélectrique, procédé de formation de film mince diélectrique et film mince diélectrique ainsi formé
WO2014181526A1 (fr) 2013-05-07 2014-11-13 パナソニックＩｐマネジメント株式会社 Conducteur de protons et dispositif conducteur de protons
CN109234679B (zh) * 2018-08-31 2020-06-12 内蒙古科技大学 一种双层pnzst钙钛矿反铁电薄膜及其制备方法
CN114774844A (zh) * 2022-03-31 2022-07-22 清华大学 在原子级别调控薄膜平整表面成分的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990000816A1 (fr) * 1988-07-06 1990-01-25 Siemens Aktiengesellschaft Element de josephson a materiau supraconducteur en ceramique oxydee et son procede de fabrication
US5027253A (en) * 1990-04-09 1991-06-25 Ibm Corporation Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards
JPH07283069A (ja) * 1994-04-07 1995-10-27 Murata Mfg Co Ltd 誘電体薄膜およびその製造方法
JPH09283369A (ja) * 1996-04-17 1997-10-31 Murata Mfg Co Ltd 薄膜コンデンサの製造方法
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299584A (ja) * 1992-02-21 1993-11-12 Toshiba Corp 薄膜容量素子及び半導体記憶装置
JPH0864216A (ja) * 1994-08-25 1996-03-08 Tonen Corp 酸素イオン導電体薄膜及びその製造方法
JPH09221393A (ja) * 1996-02-13 1997-08-26 Tdk Corp 鉛含有ペロブスカイト型強誘電体単結晶膜及びその製造方法
JPH09321361A (ja) * 1996-05-27 1997-12-12 Tdk Corp 圧電振動部品及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990000816A1 (fr) * 1988-07-06 1990-01-25 Siemens Aktiengesellschaft Element de josephson a materiau supraconducteur en ceramique oxydee et son procede de fabrication
US5027253A (en) * 1990-04-09 1991-06-25 Ibm Corporation Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards
JPH07283069A (ja) * 1994-04-07 1995-10-27 Murata Mfg Co Ltd 誘電体薄膜およびその製造方法
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
JPH09283369A (ja) * 1996-04-17 1997-10-31 Murata Mfg Co Ltd 薄膜コンデンサの製造方法

Also Published As

Publication number Publication date
AU4165600A (en) 2000-08-01
JP2002535224A (ja) 2002-10-22
CA2359710C (fr) 2008-09-02
AU774828B2 (en) 2004-07-08
WO2000042621A2 (fr) 2000-07-20
JP2011044705A (ja) 2011-03-03
EP1145252A2 (fr) 2001-10-17
CN1526172A (zh) 2004-09-01
CA2359710A1 (fr) 2000-07-20
WO2000042621A3 (fr) 2001-08-02

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080430

Termination date: 20140112