CN1016191B - 半导体器件的高氧含量硅单晶基片制法 - Google Patents

半导体器件的高氧含量硅单晶基片制法

Info

Publication number
CN1016191B
CN1016191B CN86106346A CN86106346A CN1016191B CN 1016191 B CN1016191 B CN 1016191B CN 86106346 A CN86106346 A CN 86106346A CN 86106346 A CN86106346 A CN 86106346A CN 1016191 B CN1016191 B CN 1016191B
Authority
CN
China
Prior art keywords
silicon
oxygen content
single crystal
crucible
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN86106346A
Other languages
English (en)
Chinese (zh)
Other versions
CN86106346A (zh
Inventor
铃木利彦
加藤弥三郎
二神元信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN86106346A publication Critical patent/CN86106346A/zh
Publication of CN1016191B publication Critical patent/CN1016191B/zh
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN86106346A 1985-10-31 1986-10-31 半导体器件的高氧含量硅单晶基片制法 Expired CN1016191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP244562/85 1985-10-31
JP60244562A JPS62105998A (ja) 1985-10-31 1985-10-31 シリコン基板の製法

Publications (2)

Publication Number Publication Date
CN86106346A CN86106346A (zh) 1987-06-17
CN1016191B true CN1016191B (zh) 1992-04-08

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
CN86106346A Expired CN1016191B (zh) 1985-10-31 1986-10-31 半导体器件的高氧含量硅单晶基片制法

Country Status (14)

Country Link
JP (1) JPS62105998A (it)
KR (1) KR870004498A (it)
CN (1) CN1016191B (it)
AT (1) ATA289086A (it)
AU (1) AU597599B2 (it)
CA (1) CA1336061C (it)
DE (1) DE3637006A1 (it)
DK (1) DK518486A (it)
FR (1) FR2589489B1 (it)
GB (1) GB2182262B (it)
IT (1) IT1198454B (it)
MY (1) MY100449A (it)
NL (1) NL8602738A (it)
SE (1) SE8604627L (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
EP1273684B1 (en) 1997-04-09 2005-09-14 MEMC Electronic Materials, Inc. Low defect density, vacancy dominated silicon
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
MY135749A (en) 1997-04-09 2008-06-30 Memc Electronic Materials Process for producing low defect density, ideal oxygen precipitating silicon
JPH11268987A (ja) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd シリコン単結晶およびその製造方法
JP2003517412A (ja) 1998-06-26 2003-05-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 任意に大きい直径を有する無欠陥シリコン結晶の成長方法
KR100581305B1 (ko) 1998-09-02 2006-05-22 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함 밀도 단결정 실리콘으로부터의 ｓｏｉ 구조체
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
US6416836B1 (en) 1998-10-14 2002-07-09 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
UA70313C2 (en) * 2000-08-21 2004-10-15 Close Corp Pillar Close Corp P A method for growing silicon monocrystals of the ma method for growing silicon monocrystals of the melt elt
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
DE10103691A1 (de) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Elektrische Energieversorgung für eine elektrische Heizung
WO2007137182A2 (en) 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5974978B2 (ja) * 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
CN105780113B (zh) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种表征晶体硅生长界面和生长速度的方法
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
EP0042901B1 (fr) * 1980-06-26 1984-10-31 International Business Machines Corporation Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (nl) * 1981-04-29 1982-11-16 Philips Nv Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf.
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS6033289A (ja) * 1983-07-29 1985-02-20 Toshiba Corp シリコン単結晶の製造方法
JPS6094722A (ja) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション シリコン・ウエハ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.

Also Published As

Publication number Publication date
SE8604627L (sv) 1987-05-01
GB8626074D0 (en) 1986-12-03
DK518486D0 (da) 1986-10-30
DK518486A (da) 1987-05-01
IT8648592A1 (it) 1988-04-28
SE8604627D0 (sv) 1986-10-30
CN86106346A (zh) 1987-06-17
IT1198454B (it) 1988-12-21
CA1336061C (en) 1995-06-27
AU6455086A (en) 1987-05-07
KR870004498A (ko) 1987-05-09
JPS62105998A (ja) 1987-05-16
FR2589489A1 (fr) 1987-05-07
FR2589489B1 (fr) 1994-06-10
ATA289086A (de) 1996-01-15
GB2182262A (en) 1987-05-13
MY100449A (en) 1990-10-15
IT8648592A0 (it) 1986-10-28
GB2182262B (en) 1989-09-27
AU597599B2 (en) 1990-06-07
NL8602738A (nl) 1987-05-18
DE3637006A1 (de) 1987-05-07

Similar Documents

Publication Publication Date Title
CN1016191B (zh) 半导体器件的高氧含量硅单晶基片制法
KR100847112B1 (ko) Ｉｇｂｔ용 실리콘 단결정 웨이퍼 및 ｉｇｂｔ용 실리콘단결정 웨이퍼의 제조방법
KR100928885B1 (ko) Ｉｇｂｔ용의 실리콘 단결정 웨이퍼 및 ｉｇｂｔ용의실리콘 단결정 웨이퍼의 제조방법
JP5194146B2 (ja) シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
JP5246163B2 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP2010062466A (ja) 垂直シリコンデバイス用シリコンウェーハ及びその製造方法、シリコン単結晶、並びに、垂直シリコンデバイス
KR19990077345A (ko) 웨이퍼 주변부에 결정결함이 없는 실리콘 단결정 및 그 제조방법
JP4061906B2 (ja) シリコン単結晶ウェーハの熱処理方法
JP2009091233A (ja) シリコンインゴット成長方法
JP4102988B2 (ja) シリコンウエーハおよびエピタキシャルウエーハの製造方法ならびにエピタキシャルウエーハ
KR20050120707A (ko) 단결정의 제조방법
JPWO2002000969A1 (ja) シリコンウエーハおよびエピタキシャルウエーハの製造方法ならびにエピタキシャルウエーハ
JPWO1999037833A1 (ja) 単結晶引き上げ装置
JPH07267776A (ja) 結晶成長方法
JPH0741383A (ja) 半導体単結晶およびその製造方法
CN119392351A (zh) 单晶硅的生产装置、制备方法、单晶硅以及绝缘栅双极晶体管
JP5489064B2 (ja) シリコン単結晶の育成方法
KR20180115281A (ko) Fz 실리콘 및 fz 실리콘 준비 방법
JPH09255475A (ja) 単結晶成長装置
KR100221087B1 (ko) 실리콘 단결정 성장 방법 및 실리콘 단결정
JP4150167B2 (ja) シリコン単結晶の製造方法
JP3498330B2 (ja) 単結晶成長装置
KR100468117B1 (ko) 고품질 실리콘 단결정의 제조방법
JP2025116385A (ja) シリコン単結晶の抵抗率測定方法
TW202410201A (zh) 製造半導體裝置之方法及半導體裝置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee