CN1128893C - 腐蚀设备 - Google Patents

腐蚀设备 Download PDF

Info

Publication number
CN1128893C
CN1128893C CN95121846A CN95121846A CN1128893C CN 1128893 C CN1128893 C CN 1128893C CN 95121846 A CN95121846 A CN 95121846A CN 95121846 A CN95121846 A CN 95121846A CN 1128893 C CN1128893 C CN 1128893C
Authority
CN
China
Prior art keywords
substrate
etching
chamber
active layer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95121846A
Other languages
English (en)
Chinese (zh)
Other versions
CN1136599A (zh
Inventor
山崎舜平
须泽英臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1136599A publication Critical patent/CN1136599A/zh
Application granted granted Critical
Publication of CN1128893C publication Critical patent/CN1128893C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
CN95121846A 1994-11-26 1995-11-25 腐蚀设备 Expired - Fee Related CN1128893C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6315473A JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置
JP315473/94 1994-11-26
JP315473/1994 1994-11-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CNB991107772A Division CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件
CN99117536A Division CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法

Publications (2)

Publication Number Publication Date
CN1136599A CN1136599A (zh) 1996-11-27
CN1128893C true CN1128893C (zh) 2003-11-26

Family

ID=18065785

Family Applications (4)

Application Number Title Priority Date Filing Date
CN95121846A Expired - Fee Related CN1128893C (zh) 1994-11-26 1995-11-25 腐蚀设备
CNB2006100054399A Expired - Fee Related CN100481466C (zh) 1994-11-26 1995-11-25 半导体器件
CN99117536A Pending CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法
CNB991107772A Expired - Lifetime CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件

Family Applications After (3)

Application Number Title Priority Date Filing Date
CNB2006100054399A Expired - Fee Related CN100481466C (zh) 1994-11-26 1995-11-25 半导体器件
CN99117536A Pending CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法
CNB991107772A Expired - Lifetime CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件

Country Status (4)

Country Link
JP (1) JPH08153711A (cs)
KR (1) KR100313386B1 (cs)
CN (4) CN1128893C (cs)
TW (1) TW279249B (cs)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) * 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
JP4134671B2 (ja) * 2002-10-17 2008-08-20 松下電器産業株式会社 プラズマ処理方法
KR101225312B1 (ko) * 2005-12-16 2013-01-22 엘지디스플레이 주식회사 프로세스 장치
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN102074157B (zh) * 2011-01-07 2012-01-11 华南理工大学 一种敷铜板腐蚀设备
JP5924901B2 (ja) * 2011-10-17 2016-05-25 Hoya株式会社 転写用マスクの製造方法
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
US10287499B2 (en) 2014-10-10 2019-05-14 Kanto Denka Kogyo Co., Ltd. Etching gas composition for silicon compound, and etching method
JP7072440B2 (ja) 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5178721A (en) * 1990-08-09 1993-01-12 Fujitsu Limited Process and apparatus for dry cleaning by photo-excited radicals
US5320704A (en) * 1990-11-28 1994-06-14 Tokyo Electron Limited Plasma etching apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410621A (ja) * 1990-04-27 1992-01-14 Kawasaki Steel Corp 窒化シリコン膜のエッチング処理方法、及びその装置
JPH04206822A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 半導体製造装置
JP3176118B2 (ja) * 1992-03-27 2001-06-11 株式会社東芝 多室型基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5178721A (en) * 1990-08-09 1993-01-12 Fujitsu Limited Process and apparatus for dry cleaning by photo-excited radicals
US5320704A (en) * 1990-11-28 1994-06-14 Tokyo Electron Limited Plasma etching apparatus

Also Published As

Publication number Publication date
CN1248787A (zh) 2000-03-29
CN1825600A (zh) 2006-08-30
CN1245976A (zh) 2000-03-01
CN1136599A (zh) 1996-11-27
TW279249B (cs) 1996-06-21
JPH08153711A (ja) 1996-06-11
KR960019566A (ko) 1996-06-17
CN1251331C (zh) 2006-04-12
CN100481466C (zh) 2009-04-22
KR100313386B1 (ko) 2003-06-12

Similar Documents

Publication Publication Date Title
CN1078014C (zh) 半导体器件及其制造方法
CN1045688C (zh) 半导体薄膜及使用这种薄膜的半导体器件的制造方法
CN1173388C (zh) 具有薄膜晶体管的半导体器件
CN1057401C (zh) 半导体器件及其制造方法
CN1293607C (zh) 半导体膜、半导体器件和它们的生产方法
CN1249818C (zh) 半导体器件及其制造方法
CN1288715C (zh) 硅薄膜结晶方法、用该方法的薄膜晶体管及其平板显示器
US20070087492A1 (en) Method for forming semiconductor film, method for manufacturing semiconductor device and electrooptic device, apparatus for performing the same, and semiconductor device and electrooptic device
CN1361551A (zh) 一种半导体器件的制造方法
CN1102908A (zh) 半导体器件及其制造方法
CN1128900A (zh) 半导体器件的制造方法
CN1097298C (zh) 制造结晶硅半导体和薄膜晶体管的方法
CN1156918C (zh) 半导体器件
WO2013052298A1 (en) Methods for depositing a silicon containing layer with argon gas dilution
CN1389899A (zh) 半导体膜、半导体器件和用于制造半导体膜、半导体器件的方法
CN1521858A (zh) 薄膜晶体管及其制造方法
CN1128893C (zh) 腐蚀设备
CN1719582A (zh) 制备多晶硅薄膜的方法以及用其制备半导体器件的方法
US7374976B2 (en) Method for fabricating thin film transistor
CN1725440A (zh) 制造半导体器件的方法和由此方法制造的半导体器件
JP4176362B2 (ja) 半導体装置の作製方法
CN1134600A (zh) 制造薄膜晶体管的方法及设备
JP4212844B2 (ja) 半導体装置の作製方法
JP2003173969A (ja) 半導体膜、半導体装置及びこれらの作製方法
CN1078068A (zh) 形成半导体器件的方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20031126

Termination date: 20121125