TW279249B - - Google Patents

Info

Publication number: TW279249B
Authority: TW; Taiwan

Application number

TW084112514A

Other languages

Chinese (zh)

Original Assignee

Handotai Energy Kenkyusho Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-11-26

Filing date

1995-11-23

Publication date

1996-06-21

1995-11-23 Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk

1996-06-21 Application granted granted Critical

1996-06-21 Publication of TW279249B publication Critical patent/TW279249B/zh

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

TW084112514A 1994-11-26 1995-11-23 TW279249B (cs)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6315473A JPH08153711A (ja)	1994-11-26	1994-11-26	エッチング装置

Publications (1)

Publication Number	Publication Date
TW279249B true TW279249B (cs)	1996-06-21

Family

ID=18065785

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW084112514A TW279249B (cs)	1994-11-26	1995-11-23

Country Status (4)

Country	Link
JP (1)	JPH08153711A (cs)
KR (1)	KR100313386B1 (cs)
CN (4)	CN1128893C (cs)
TW (1)	TW279249B (cs)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3336975B2 (ja) *	1998-03-27	2002-10-21	日本電気株式会社	基板処理方法
DE10229037A1 (de)	2002-06-28	2004-01-29	Robert Bosch Gmbh	Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
JP4134671B2 (ja) *	2002-10-17	2008-08-20	松下電器産業株式会社	プラズマ処理方法
KR101225312B1 (ko) *	2005-12-16	2013-01-22	엘지디스플레이 주식회사	프로세스 장치
US8207026B2 (en) *	2009-01-28	2012-06-26	Semiconductor Energy Laboratory Co., Ltd.	Manufacturing method of thin film transistor and manufacturing method of display device
CN102074157B (zh) *	2011-01-07	2012-01-11	华南理工大学	一种敷铜板腐蚀设备
JP5924901B2 (ja) *	2011-10-17	2016-05-25	Hoya株式会社	転写用マスクの製造方法
KR102030797B1 (ko)	2012-03-30	2019-11-11	삼성디스플레이 주식회사	박막 트랜지스터 표시판 제조 방법
JP6280655B2 (ja) *	2014-10-10	2018-02-14	関東電化工業株式会社	ケイ素化合物用エッチングガス組成物及びエッチング方法
JP7072440B2 (ja)	2018-05-16	2022-05-20	東京エレクトロン株式会社	シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4498953A (en) *	1983-07-27	1985-02-12	At&T Bell Laboratories	Etching techniques
JPH0410621A (ja) *	1990-04-27	1992-01-14	Kawasaki Steel Corp	窒化シリコン膜のエッチング処理方法、及びその装置
JPH06103682B2 (ja) *	1990-08-09	1994-12-14	富士通株式会社	光励起ドライクリーニング方法および装置
JPH04196529A (ja) *	1990-11-28	1992-07-16	Toshiba Corp	プラズマ処理装置
JPH04206822A (ja) *	1990-11-30	1992-07-28	Mitsubishi Electric Corp	半導体製造装置
JP3176118B2 (ja) *	1992-03-27	2001-06-11	株式会社東芝	多室型基板処理装置

1994
- 1994-11-26 JP JP6315473A patent/JPH08153711A/ja not_active Withdrawn
1995
- 1995-11-23 TW TW084112514A patent/TW279249B/zh not_active IP Right Cessation
- 1995-11-25 CN CN95121846A patent/CN1128893C/zh not_active Expired - Fee Related
- 1995-11-25 CN CNB2006100054399A patent/CN100481466C/zh not_active Expired - Fee Related
- 1995-11-25 KR KR1019950044538A patent/KR100313386B1/ko not_active Expired - Fee Related
1999
- 1999-08-05 CN CNB991107772A patent/CN1251331C/zh not_active Expired - Lifetime
- 1999-08-05 CN CN99117536A patent/CN1248787A/zh active Pending

Also Published As

Publication number	Publication date
CN1251331C (zh)	2006-04-12
KR960019566A (ko)	1996-06-17
CN1245976A (zh)	2000-03-01
CN100481466C (zh)	2009-04-22
CN1248787A (zh)	2000-03-29
CN1128893C (zh)	2003-11-26
KR100313386B1 (ko)	2003-06-12
JPH08153711A (ja)	1996-06-11
CN1136599A (zh)	1996-11-27
CN1825600A (zh)	2006-08-30

Legal Events

Date	Code	Title	Description
2015-03-21	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
BR9508234A (cs)	1997-12-23
EP0671407A3 (cs)	1995-10-25
EP0671801A3 (cs)	1995-10-25
EP0666470A3 (cs)	1995-09-20
EP0665261A3 (cs)	1995-09-13
EP0667387A3 (cs)	1995-09-27
TW273055B (cs)	1996-03-21
BR9509661A (cs)	1997-12-23
FR2728168B1 (cs)	1997-02-07
BY1704C1 (cs)	1997-09-30
BRPI9401073A2 (cs)	1995-12-05
CU22453A3 (cs)	1996-10-05
ECSMU940033U (cs)	1994-09-16
ECSDI940193S (cs)	1994-11-16
ECSDI940191S (cs)	1994-11-16
ECSDI940182S (cs)	1994-08-15
ECSDI940181S (cs)	1994-08-15
EP0663383A3 (cs)	1995-08-16
EP0666472A3 (cs)	1995-09-06
CN3029030S (cs)	1994-12-14
CN3028681S (cs)	1994-11-30
CN3028493S (cs)	1994-11-23
CN3028268S (cs)	1994-11-16
EP0662757A3 (cs)	1995-08-09
CN3027481S (cs)	1994-10-12