CN1130442A - 光和辐射的半导体探测器及其制造方法 - Google Patents

光和辐射的半导体探测器及其制造方法 Download PDF

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Publication number
CN1130442A
CN1130442A CN95190414A CN95190414A CN1130442A CN 1130442 A CN1130442 A CN 1130442A CN 95190414 A CN95190414 A CN 95190414A CN 95190414 A CN95190414 A CN 95190414A CN 1130442 A CN1130442 A CN 1130442A
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CN
China
Prior art keywords
substrate
semiconductor
expression
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN95190414A
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English (en)
Chinese (zh)
Inventor
齐藤丰
井上昌宏
山中顺子
池田博一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN1130442A publication Critical patent/CN1130442A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN95190414A 1994-03-28 1995-03-27 光和辐射的半导体探测器及其制造方法 Pending CN1130442A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57368/94 1994-03-28
JP5736894 1994-03-28

Publications (1)

Publication Number Publication Date
CN1130442A true CN1130442A (zh) 1996-09-04

Family

ID=13053653

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95190414A Pending CN1130442A (zh) 1994-03-28 1995-03-27 光和辐射的半导体探测器及其制造方法

Country Status (5)

Country Link
US (1) US6001667A (2)
KR (1) KR960702950A (2)
CN (1) CN1130442A (2)
TW (1) TW275717B (2)
WO (1) WO1995026573A1 (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533781C (zh) * 2006-06-30 2009-08-26 国际商业机器公司 用于确定辐射强度的方法、装置和系统
CN102110649A (zh) * 2009-12-28 2011-06-29 北大方正集团有限公司 一种改善铝栅互补金属氧化物半导体静态电流失效的方法
CN106908388A (zh) * 2017-03-16 2017-06-30 亿信标准认证集团有限公司 关于工厂废水排放的液体浓度标准认证检测系统

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
US6737626B1 (en) * 2001-08-06 2004-05-18 Pixim, Inc. Image sensors with underlying and lateral insulator structures
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
US20040164321A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Vertical charge transfer active pixel sensor
US20070210342A1 (en) * 2003-02-26 2007-09-13 Dialog Imaging Systems Gmbh Vertical charge transfer active pixel sensor
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US6864156B1 (en) * 2003-04-04 2005-03-08 Xilinx, Inc. Semiconductor wafer with well contacts on back side
WO2004099740A2 (en) * 2003-05-08 2004-11-18 Council For The Central Laboratory Of The Research Councils Accelerated particle and high energy radiation sensor
KR100561004B1 (ko) * 2003-12-30 2006-03-16 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 제조 방법
US7586108B2 (en) * 2007-06-25 2009-09-08 Asml Netherlands B.V. Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
JP2009060001A (ja) * 2007-09-03 2009-03-19 Casio Comput Co Ltd フォトトランジスタ
US9006827B2 (en) * 2011-11-09 2015-04-14 International Business Machines Corporation Radiation hardened memory cell and design structures
CN103137776B (zh) * 2013-01-31 2015-05-27 西安电子科技大学 谐振腔式的双mos光电探测器
DE102019206494A1 (de) * 2019-05-06 2020-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors
US12154917B2 (en) * 2020-04-10 2024-11-26 Optohub Co., Ltd Semiconductor image sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505557B1 (2) * 1969-05-22 1975-03-05
JPS5066190A (2) * 1973-10-11 1975-06-04
JPS5336180A (en) * 1976-09-16 1978-04-04 Hitachi Ltd Production of semiconductor device
JPH01238154A (ja) * 1988-03-18 1989-09-22 Canon Inc 光電変換装置
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
DE4209536C3 (de) * 1992-03-24 2000-10-05 Stuttgart Mikroelektronik Bildzelle für einen Bildaufnehmer-Chip
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533781C (zh) * 2006-06-30 2009-08-26 国际商业机器公司 用于确定辐射强度的方法、装置和系统
CN102110649A (zh) * 2009-12-28 2011-06-29 北大方正集团有限公司 一种改善铝栅互补金属氧化物半导体静态电流失效的方法
CN106908388A (zh) * 2017-03-16 2017-06-30 亿信标准认证集团有限公司 关于工厂废水排放的液体浓度标准认证检测系统

Also Published As

Publication number Publication date
TW275717B (2) 1996-05-11
US6001667A (en) 1999-12-14
KR960702950A (ko) 1996-05-23
WO1995026573A1 (en) 1995-10-05

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