CN1146955C - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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Publication number
CN1146955C
CN1146955C CNB961239751A CN96123975A CN1146955C CN 1146955 C CN1146955 C CN 1146955C CN B961239751 A CNB961239751 A CN B961239751A CN 96123975 A CN96123975 A CN 96123975A CN 1146955 C CN1146955 C CN 1146955C
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China
Prior art keywords
semiconductor film
film
heat treatment
metal element
concentration
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Expired - Fee Related
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CNB961239751A
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English (en)
Chinese (zh)
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CN1162188A (zh
Inventor
ɽ��˴ƽ
山崎舜平
寺本聪
小山润
宫永昭治
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1162188A publication Critical patent/CN1162188A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNB961239751A 1995-12-15 1996-12-15 半导体器件的制造方法 Expired - Fee Related CN1146955C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP347820/95 1995-12-15
JP347820/1995 1995-12-15
JP34782095 1995-12-15

Publications (2)

Publication Number Publication Date
CN1162188A CN1162188A (zh) 1997-10-15
CN1146955C true CN1146955C (zh) 2004-04-21

Family

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Family Applications (1)

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CNB961239751A Expired - Fee Related CN1146955C (zh) 1995-12-15 1996-12-15 半导体器件的制造方法

Country Status (4)

Country Link
US (2) US5869363A (2)
KR (2) KR100285019B1 (2)
CN (1) CN1146955C (2)
TW (1) TW319912B (2)

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JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP3765902B2 (ja) 1997-02-19 2006-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法および電子デバイスの作製方法
JP4401448B2 (ja) 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4242461B2 (ja) * 1997-02-24 2009-03-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844552B2 (ja) 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6241817B1 (en) * 1997-05-24 2001-06-05 Jin Jang Method for crystallizing amorphous layer
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP3844561B2 (ja) * 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6218219B1 (en) 1997-09-29 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
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JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000039628A (ja) 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
KR100325066B1 (ko) * 1998-06-30 2002-08-14 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터의제조방법
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
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JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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Also Published As

Publication number Publication date
CN1162188A (zh) 1997-10-15
US5869363A (en) 1999-02-09
TW319912B (2) 1997-11-11
KR100285020B1 (ko) 2001-03-15
US20010026964A1 (en) 2001-10-04
KR100285019B1 (ko) 2001-04-02

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