CN1154159C - 从基片上灰化有机物质的方法 - Google Patents

从基片上灰化有机物质的方法 Download PDF

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Publication number
CN1154159C
CN1154159C CNB99802399XA CN99802399A CN1154159C CN 1154159 C CN1154159 C CN 1154159C CN B99802399X A CNB99802399X A CN B99802399XA CN 99802399 A CN99802399 A CN 99802399A CN 1154159 C CN1154159 C CN 1154159C
Authority
CN
China
Prior art keywords
plasma
ashing
gas
sulfur trioxide
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB99802399XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1289452A (zh
Inventor
Eo
E·O·莱文松
A·瓦莱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anon Inc
Original Assignee
Anon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anon Inc filed Critical Anon Inc
Publication of CN1289452A publication Critical patent/CN1289452A/zh
Application granted granted Critical
Publication of CN1154159C publication Critical patent/CN1154159C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CNB99802399XA 1998-01-28 1999-01-26 从基片上灰化有机物质的方法 Expired - Fee Related CN1154159C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1469598A 1998-01-28 1998-01-28
US09/014,695 1998-01-28

Publications (2)

Publication Number Publication Date
CN1289452A CN1289452A (zh) 2001-03-28
CN1154159C true CN1154159C (zh) 2004-06-16

Family

ID=21767120

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB99802399XA Expired - Fee Related CN1154159C (zh) 1998-01-28 1999-01-26 从基片上灰化有机物质的方法

Country Status (9)

Country Link
EP (1) EP1074043A4 (fr)
JP (1) JP3358808B2 (fr)
KR (1) KR100377711B1 (fr)
CN (1) CN1154159C (fr)
CA (1) CA2319018C (fr)
IL (1) IL137513A (fr)
MY (1) MY134851A (fr)
TW (1) TWI239994B (fr)
WO (1) WO1999039382A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231775B1 (en) 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100559947B1 (ko) * 2004-08-18 2006-03-13 동부아남반도체 주식회사 반도체 소자용 금속 배선의 후처리 방법
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
CN104599962A (zh) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 厚铝刻蚀工艺中聚合物的去除方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
EP0368732B1 (fr) * 1988-11-04 1995-06-28 Fujitsu Limited Procédé pour former un masque en matière photorésistante
JPH0475323A (ja) * 1990-07-17 1992-03-10 Seiko Epson Corp レジスト除去法
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
FR2673763A1 (fr) * 1991-03-06 1992-09-11 Centre Nat Rech Scient Procede de gravure anisotrope des polymeres par plasma.
JP3084910B2 (ja) * 1992-03-18 2000-09-04 ヤマハ株式会社 配線形成法
JPH05304089A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からのレジストの除去方法並びに装置
JP2572924B2 (ja) * 1992-09-04 1997-01-16 醇 西脇 大気圧プラズマによる金属の表面処理法
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers

Also Published As

Publication number Publication date
KR20010040431A (ko) 2001-05-15
CA2319018C (fr) 2004-08-24
TWI239994B (en) 2005-09-21
JP3358808B2 (ja) 2002-12-24
CA2319018A1 (fr) 1999-08-05
MY134851A (en) 2007-12-31
IL137513A0 (en) 2001-07-24
IL137513A (en) 2004-05-12
CN1289452A (zh) 2001-03-28
EP1074043A1 (fr) 2001-02-07
WO1999039382A1 (fr) 1999-08-05
JP2002502125A (ja) 2002-01-22
KR100377711B1 (ko) 2003-03-26
EP1074043A4 (fr) 2002-11-06

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Granted publication date: 20040616

Termination date: 20180126