MY134851A - Process for ashing organic materials from substrates - Google Patents

Process for ashing organic materials from substrates

Info

Publication number
MY134851A
MY134851A MYPI99000277A MYPI9900277A MY134851A MY 134851 A MY134851 A MY 134851A MY PI99000277 A MYPI99000277 A MY PI99000277A MY PI9900277 A MYPI9900277 A MY PI9900277A MY 134851 A MY134851 A MY 134851A
Authority
MY
Malaysia
Prior art keywords
gas
sulfur trioxide
supplemental
substrates
organic materials
Prior art date
Application number
MYPI99000277A
Other languages
English (en)
Inventor
Eric O Levenson
Ahmad Nmi Waleh
Original Assignee
Anon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anon Inc filed Critical Anon Inc
Publication of MY134851A publication Critical patent/MY134851A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
MYPI99000277A 1998-01-28 1999-01-26 Process for ashing organic materials from substrates MY134851A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1469598A 1998-01-28 1998-01-28

Publications (1)

Publication Number Publication Date
MY134851A true MY134851A (en) 2007-12-31

Family

ID=21767120

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI99000277A MY134851A (en) 1998-01-28 1999-01-26 Process for ashing organic materials from substrates

Country Status (9)

Country Link
EP (1) EP1074043A4 (fr)
JP (1) JP3358808B2 (fr)
KR (1) KR100377711B1 (fr)
CN (1) CN1154159C (fr)
CA (1) CA2319018C (fr)
IL (1) IL137513A (fr)
MY (1) MY134851A (fr)
TW (1) TWI239994B (fr)
WO (1) WO1999039382A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6231775B1 (en) 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US20050136681A1 (en) * 2003-12-23 2005-06-23 Tokyo Electron Limited Method and apparatus for removing photoresist from a substrate
KR100559947B1 (ko) * 2004-08-18 2006-03-13 동부아남반도체 주식회사 반도체 소자용 금속 배선의 후처리 방법
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
CN104599962A (zh) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 厚铝刻蚀工艺中聚合物的去除方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
EP0368732B1 (fr) * 1988-11-04 1995-06-28 Fujitsu Limited Procédé pour former un masque en matière photorésistante
JPH0475323A (ja) * 1990-07-17 1992-03-10 Seiko Epson Corp レジスト除去法
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
FR2673763A1 (fr) * 1991-03-06 1992-09-11 Centre Nat Rech Scient Procede de gravure anisotrope des polymeres par plasma.
JP3084910B2 (ja) * 1992-03-18 2000-09-04 ヤマハ株式会社 配線形成法
JPH05304089A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からのレジストの除去方法並びに装置
JP2572924B2 (ja) * 1992-09-04 1997-01-16 醇 西脇 大気圧プラズマによる金属の表面処理法
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers

Also Published As

Publication number Publication date
KR20010040431A (ko) 2001-05-15
CA2319018C (fr) 2004-08-24
TWI239994B (en) 2005-09-21
JP3358808B2 (ja) 2002-12-24
CA2319018A1 (fr) 1999-08-05
IL137513A0 (en) 2001-07-24
IL137513A (en) 2004-05-12
CN1289452A (zh) 2001-03-28
EP1074043A1 (fr) 2001-02-07
WO1999039382A1 (fr) 1999-08-05
JP2002502125A (ja) 2002-01-22
CN1154159C (zh) 2004-06-16
KR100377711B1 (ko) 2003-03-26
EP1074043A4 (fr) 2002-11-06

Similar Documents

Publication Publication Date Title
US5626775A (en) Plasma etch with trifluoroacetic acid and derivatives
TW200509246A (en) Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
KR900001875A (ko) 금속에 의한 작은 관통구 충전 방법 및 그 방법을 실행시키기 위한 cvd장치
DE69415323D1 (de) Hydrophile filme durch plasmapolymerisation
KR870008379A (ko) 반도체 웨이퍼상에 포토레지스트 박리방법
EP0874391A3 (fr) Procédé de dépÔt d'une couche de Si02 dopée par un halogène
EP1260606A3 (fr) Matériau à faible constante diélectrique et procédé CVD
KR960702674A (ko) 플라즈마 처리방법(plasma processing method)
IT1238349B (it) Procedimento per eliminare composti gassosi contaminanti, in particolare di droganti da gas vettori contenenti composti di alogenosilano.
MY134851A (en) Process for ashing organic materials from substrates
IL110454A (en) Process for plasma treatment of antiballistically effective materials
MY125913A (en) Method of removing organic materials from substrates
WO2000028552A8 (fr) Procede et appareil de decontamination aux ultraviolets de surfaces et de nuages d'aerosols photosensibilises
DK1268622T3 (da) Fremgangsmåde til overfladebehandling af polymersubstrater
TW200501225A (en) Method and apparatus for bilayer photoresist dry development
DE60201973D1 (de) Zersetzung von fluorhaltigen verbindungen
ES2151633T3 (es) Procedimiento y dispositivo para el decapado de un substrato metalico.
Misra et al. Plasma etching of dielectric films using the non-global-warming gas CF3I
JPH06108257A (ja) 大気圧吹き出し型プラズマ反応装置
KR970077284A (ko) 트리플루오로아세트산 및 유도체를 이용하는 플라즈마 부식법
JP3704965B2 (ja) ドライエッチング方法及び装置
KR970063465A (ko) 텅스텐 화학기상증착 반응실에서의 식각 방법
JPS52131471A (en) Surface treatment of substrate
EP0854502A2 (fr) Gaz iodofluorocarboné pour la gravure de couches diélectriques et le nettoyage de chambres de réacteur
JPH0475323A (ja) レジスト除去法