CN1273654C - 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 - Google Patents

氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 Download PDF

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Publication number
CN1273654C
CN1273654C CNB001290134A CN00129013A CN1273654C CN 1273654 C CN1273654 C CN 1273654C CN B001290134 A CNB001290134 A CN B001290134A CN 00129013 A CN00129013 A CN 00129013A CN 1273654 C CN1273654 C CN 1273654C
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growth
facet
gan
substrate
dislocation
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CN1289865A (zh
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元木健作
冈久拓司
松本直树
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CNB001290134A 1999-09-28 2000-09-26 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 Expired - Fee Related CN1273654C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP273882/1999 1999-09-28
JP27388299A JP4145437B2 (ja) 1999-09-28 1999-09-28 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP273882/99 1999-09-28

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CNB2006100877856A Division CN100477089C (zh) 1999-09-28 2000-09-26 单晶氮化镓的晶体生长方法
CN2006101059614A Division CN1908251B (zh) 1999-09-28 2000-09-26 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法

Publications (2)

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CN1289865A CN1289865A (zh) 2001-04-04
CN1273654C true CN1273654C (zh) 2006-09-06

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CNB001290134A Expired - Fee Related CN1273654C (zh) 1999-09-28 2000-09-26 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法
CNB2006100877856A Expired - Fee Related CN100477089C (zh) 1999-09-28 2000-09-26 单晶氮化镓的晶体生长方法
CN2006101059614A Expired - Fee Related CN1908251B (zh) 1999-09-28 2000-09-26 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法

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CNB2006100877856A Expired - Fee Related CN100477089C (zh) 1999-09-28 2000-09-26 单晶氮化镓的晶体生长方法
CN2006101059614A Expired - Fee Related CN1908251B (zh) 1999-09-28 2000-09-26 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法

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US (1) US6468347B1 (de)
EP (3) EP1775355A3 (de)
JP (1) JP4145437B2 (de)
KR (1) KR100404865B1 (de)
CN (3) CN1273654C (de)
DE (1) DE60033610T2 (de)
TW (1) TW508836B (de)

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