CN1301004C - 互补金属氧化物半导体图像传感器 - Google Patents

互补金属氧化物半导体图像传感器 Download PDF

Info

Publication number: CN1301004C
Authority: CN; China
Prior art keywords: wiring; fixed potential; image sensor; circuit; circuits
Prior art date: 2002-02-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CNB021570612A

Other languages

English (en)

Chinese (zh)

Other versions

CN1437387A (zh

Inventor

国分政利

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Socionext Inc

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-02-04

Filing date

2002-12-24

Publication date

2007-02-14

2002-12-24 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

2003-08-20 Publication of CN1437387A publication Critical patent/CN1437387A/zh

2007-02-14 Application granted granted Critical

2007-02-14 Publication of CN1301004C publication Critical patent/CN1301004C/zh

2022-12-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

Engineering & Computer Science (AREA)
Multimedia (AREA)
Signal Processing (AREA)
Solid State Image Pick-Up Elements (AREA)
Transforming Light Signals Into Electric Signals (AREA)

CNB021570612A 2002-02-04 2002-12-24 互补金属氧化物半导体图像传感器 Expired - Fee Related CN1301004C (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP027277/2002		2002-02-04
JP2002027277A JP3992504B2 (ja)	2002-02-04	2002-02-04	Ｃｍｏｓイメージセンサ

Publications (2)

Publication Number	Publication Date
CN1437387A CN1437387A (zh)	2003-08-20
CN1301004C true CN1301004C (zh)	2007-02-14

Family

ID=19192400

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNB021570612A Expired - Fee Related CN1301004C (zh)	2002-02-04	2002-12-24	互补金属氧化物半导体图像传感器

Country Status (6)

Country	Link
US (1)	US7113215B2 (de)
EP (1)	EP1333662A3 (de)
JP (1)	JP3992504B2 (de)
KR (1)	KR100858452B1 (de)
CN (1)	CN1301004C (de)
TW (1)	TW569441B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3183390B2 (ja)	1995-09-05	2001-07-09	キヤノン株式会社	光電変換装置及びそれを用いた撮像装置
JP3972302B2 (ja) *	2003-03-26	2007-09-05	ソニー株式会社	撮像素子
US20050200730A1 (en) *	2004-03-11	2005-09-15	Beck Jeffery S.	Active pixel sensor array sampling system and method
US7388608B2 (en) *	2004-03-11	2008-06-17	Micron Technology, Inc.	Sample and hold circuit and active pixel sensor array sampling system utilizing same
JP4352964B2 (ja) *	2004-03-29	2009-10-28	株式会社島津製作所	二次元像検出器
JP2006019927A (ja) *	2004-06-30	2006-01-19	Fujitsu Ltd	ｋＴＣ雑音を低減したＣＭＯＳイメージセンサ、同イメージセンサの用いるリセットトランジスタ制御回路、および同制御回路に用いる電圧切替回路
JP4969771B2 (ja) *	2004-07-12	2012-07-04	ソニー株式会社	固体撮像装置及びそのキャパシタ調整方法
CN100446547C (zh) *	2005-03-07	2008-12-24	富士胶片株式会社	具有扩大面积的光电管的固态图像传感器
KR100729501B1 (ko) *	2005-08-03	2007-06-15	매그나칩 반도체 유한회사	자동초점조절 기능을 갖는 ｃｍｏｓ 이미지센서 및 그를포함하는 카메라 장치
US7919827B2 (en) *	2005-03-11	2011-04-05	Taiwan Semiconductor Manufacturing Co., Ltd.	Method and structure for reducing noise in CMOS image sensors
US7573519B2 (en) *	2005-10-26	2009-08-11	Eastman Kodak Company	Method for correcting eclipse or darkle
JP4144892B2 (ja)	2006-08-28	2008-09-03	キヤノン株式会社	光電変換装置及び撮像装置
US20080308585A1 (en) *	2006-09-27	2008-12-18	John Foley	Nozzle
JP2008108917A (ja) *	2006-10-25	2008-05-08	Sony Corp	固体撮像装置及び電子機器
US7537951B2 (en)	2006-11-15	2009-05-26	International Business Machines Corporation	Image sensor including spatially different active and dark pixel interconnect patterns
WO2008060124A2 (en) *	2006-11-17	2008-05-22	Silicon Communications Technology Co., Ltd.	Low power image sensor adjusting reference voltage automatically and optical pointing device comprising the same
JP5067011B2 (ja) *	2007-05-18	2012-11-07	ソニー株式会社	固体撮像装置、撮像装置、電子機器
CN101387771B (zh) *	2007-09-14	2010-08-18	群康科技(深圳)有限公司	液晶显示装置
TWI359611B (en) *	2008-02-21	2012-03-01	Novatek Microelectronics Corp	Image sensor capable of reducing noises
JP5173503B2 (ja) *	2008-03-14	2013-04-03	キヤノン株式会社	撮像装置及び撮像システム
JP5006281B2 (ja) *	2008-07-24	2012-08-22	パナソニック株式会社	固体撮像装置、カメラ
JP2010225618A (ja) *	2009-03-19	2010-10-07	Seiko Epson Corp	センシング装置および電子機器
US8624875B2 (en) *	2009-08-24	2014-01-07	Semiconductor Energy Laboratory Co., Ltd.	Method for driving touch panel
WO2011055638A1 (en)	2009-11-06	2011-05-12	Semiconductor Energy Laboratory Co., Ltd.	Display device
JP5578008B2 (ja) *	2010-10-12	2014-08-27	ソニー株式会社	固体撮像装置、固体撮像装置の駆動方法および撮像装置
CA2835870A1 (en)	2011-05-12	2012-11-15	Olive Medical Corporation	Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects
JP6239820B2 (ja) *	2011-12-19	2017-11-29	キヤノン株式会社	撮像装置及びその制御方法
CN104486987A (zh)	2012-07-26	2015-04-01	橄榄医疗公司	具有最小面积单片式cmos图像传感器的相机系统
WO2014145246A1 (en)	2013-03-15	2014-09-18	Olive Medical Corporation	Image sensor synchronization without input clock and data transmission clock
AU2014233192B2 (en)	2013-03-15	2018-11-22	DePuy Synthes Products, Inc.	Minimize image sensor I/O and conductor counts in endoscope applications
US10694131B2 (en)	2016-06-15	2020-06-23	Samsung Electronics Co., Ltd.	Comparing circuit and an image sensor including a current stabilization circuit
JP7452962B2 (ja) *	2018-11-16	2024-03-19	ソニーセミコンダクタソリューションズ株式会社	撮像装置
FR3102885B1 (fr) *	2019-10-31	2022-03-18	Trixell	Capteur photosensible à capteurs élémentaires raboutés
CN111430394A (zh) *	2020-04-26	2020-07-17	上海微阱电子科技有限公司	一种图像传感器结构及制作方法
JP7678676B2 (ja)	2021-02-04	2025-05-16	キヤノン株式会社	光電変換装置
JP7676159B2 (ja) *	2021-02-04	2025-05-14	キヤノン株式会社	光電変換装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5122649A (en) *	1989-12-11	1992-06-16	Fuji Photo Film Co., Ltd.	Solid-state imaging device having a predetermined impurity layer embedded between two adjacent sets of switching transistors
US5136358A (en) *	1990-06-06	1992-08-04	Fuji Xerox Co., Ltd.	Multi-layered wiring structure
EP1049171A1 (de) *	1998-10-30	2000-11-02	Hamamatsu Photonics K.K.	Festkörper-bildaufnahmevorrichtung und festkörperbildmatrix
US6201573B1 (en) *	1995-11-13	2001-03-13	Hamamatsu Photonics K. K.	Solid state imaging apparatus for imaging a two dimensional optical image having a number of integration circuits

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0748786B2 (ja)	1989-10-04	1995-05-24	富士ゼロックス株式会社	イメージセンサ
US5151380A (en) *	1991-08-19	1992-09-29	Texas Instruments Incorporated	Method of making top buss virtual phase frame interline transfer CCD image sensor
JP3219036B2 (ja) *	1997-11-11	2001-10-15	日本電気株式会社	固体撮像装置
KR100464955B1 (ko) *	1998-06-29	2005-04-06	매그나칩 반도체 유한회사	메모리소자와 함께 집적화된 씨모스 이미지센서
KR20010061308A (ko) *	1999-12-28	2001-07-07	박종섭	박막 이미지센서의 제조 방법
KR100429571B1 (ko) *	1999-12-28	2004-05-03	주식회사 하이닉스반도체	저전력화 및 화질 개선을 위한 단위 화소 회로 및 판독 회로를 갖는 이미지센서
KR100320439B1 (ko) *	1999-12-30	2002-01-12	박종섭	씨모스 이미지 센서
US6452149B1 (en) *	2000-03-07	2002-09-17	Kabushiki Kaisha Toshiba	Image input system including solid image sensing section and signal processing section
US7071980B2 (en) *	2000-07-27	2006-07-04	Canon Kabushiki Kaisha	Image sensing apparatus
KR20010087810A (ko) *	2001-06-11	2001-09-26	하경호	근접 센싱을 위한 고집적 cmos 이미지 센서
US6927433B2 (en) *	2001-06-28	2005-08-09	Isetec, Inc	Active pixel image sensor with two transistor pixel, in-pixel non-uniformity correction, and bootstrapped reset lines

2002
- 2002-02-04 JP JP2002027277A patent/JP3992504B2/ja not_active Expired - Fee Related
- 2002-12-03 EP EP02258331A patent/EP1333662A3/de not_active Withdrawn
- 2002-12-03 TW TW091135083A patent/TW569441B/zh not_active IP Right Cessation
- 2002-12-16 US US10/319,516 patent/US7113215B2/en not_active Expired - Fee Related
- 2002-12-17 KR KR1020020080579A patent/KR100858452B1/ko not_active Expired - Fee Related
- 2002-12-24 CN CNB021570612A patent/CN1301004C/zh not_active Expired - Fee Related

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5122649A (en) *	1989-12-11	1992-06-16	Fuji Photo Film Co., Ltd.	Solid-state imaging device having a predetermined impurity layer embedded between two adjacent sets of switching transistors
US5136358A (en) *	1990-06-06	1992-08-04	Fuji Xerox Co., Ltd.	Multi-layered wiring structure
US6201573B1 (en) *	1995-11-13	2001-03-13	Hamamatsu Photonics K. K.	Solid state imaging apparatus for imaging a two dimensional optical image having a number of integration circuits
EP1049171A1 (de) *	1998-10-30	2000-11-02	Hamamatsu Photonics K.K.	Festkörper-bildaufnahmevorrichtung und festkörperbildmatrix

Also Published As

Publication number	Publication date
TW569441B (en)	2004-01-01
US20030146994A1 (en)	2003-08-07
EP1333662A3 (de)	2004-01-07
EP1333662A2 (de)	2003-08-06
US7113215B2 (en)	2006-09-26
JP2003229557A (ja)	2003-08-15
TW200303088A (en)	2003-08-16
CN1437387A (zh)	2003-08-20
KR100858452B1 (ko)	2008-09-16
JP3992504B2 (ja)	2007-10-17
KR20030066308A (ko)	2003-08-09

Legal Events

Date	Code	Title	Description
2003-08-20	C06	Publication
2003-08-20	PB01	Publication
2003-11-05	C10	Entry into substantive examination
2003-11-05	SE01	Entry into force of request for substantive examination
2007-02-14	C14	Grant of patent or utility model
2007-02-14	GR01	Patent grant
2009-01-28	C41	Transfer of patent application or patent right or utility model
2009-01-28	TR01	Transfer of patent right	Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd.
2009-04-30	ASS	Succession or assignment of patent right	Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219
2010-08-25	C56	Change in the name or address of the patentee	Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD.
2010-08-25	CP01	Change in the name or title of a patent holder	Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd.
2010-08-25	CP02	Change in the address of a patent holder	Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd.
2015-06-03	ASS	Succession or assignment of patent right	Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150515
2015-06-03	C41	Transfer of patent application or patent right or utility model
2015-06-03	TR01	Transfer of patent right	Effective date of registration: 20150515 Address after: Kanagawa Patentee after: SOCIONEXT Inc. Address before: Kanagawa Patentee before: FUJITSU MICROELECTRONICS Ltd.
2018-12-14	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20070214 Termination date: 20171224
2018-12-14	CF01	Termination of patent right due to non-payment of annual fee

Publication	Publication Date	Title
CN1301004C (zh)	2007-02-14	互补金属氧化物半导体图像传感器
US20220320156A1 (en)	2022-10-06	Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus
US10651213B2 (en)	2020-05-12	Solid-state image pickup device and method of driving the same
KR102641555B1 (ko)	2024-02-28	고체 촬상 소자, 고체 촬상 소자의 구동 방법, 및, 전자 기기
EP3134918B1 (de)	2019-06-19	Festkörperbildgebungsvorrichtung und herstellungsverfahren für eine festkörperbildgebungsvorrichtung
CN1732681A (zh)	2006-02-08	固态成像器件
CN100338946C (zh)	2007-09-19	放大固态图像拾取装置
CN1828919A (zh)	2006-09-06	传感器阵列
JP2011216673A (ja)	2011-10-27	固体撮像装置、固体撮像装置の製造方法、および電子機器
CN1703901A (zh)	2005-11-30	固体摄像装置、其驱动方法及使用它的照相机
CN1527393A (zh)	2004-09-08	固态成像装置
JP4735702B2 (ja)	2011-07-27	固体撮像装置、固体撮像装置の駆動方法および撮像装置
CN1383320A (zh)	2002-12-04	Xy地址型固体摄象装置
JP2022058832A (ja)	2022-04-12	固体撮像素子及び電子機器
CN101079436A (zh)	2007-11-28	固态成像装置以及该装置和摄像机模块的制造方法
CN1877667A (zh)	2006-12-13	像素驱动电路及其驱动方法
CN1856042A (zh)	2006-11-01	固态图像拾取设备、其驱动方法和图像拾取装置
CN1605189A (zh)	2005-04-06	摄像装置
CN1967855A (zh)	2007-05-23	固体摄像装置
JP5234100B2 (ja)	2013-07-10	固体撮像装置および撮像装置
CN1832189A (zh)	2006-09-13	固体摄像装置
CN1856043A (zh)	2006-11-01	摄像装置和数码相机