CN86107855B - 应用侧壁及去除技术制做亚微米掩模窗口的方法 - Google Patents

应用侧壁及去除技术制做亚微米掩模窗口的方法

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Publication number
CN86107855B
CN86107855B CN86107855A CN86107855A CN86107855B CN 86107855 B CN86107855 B CN 86107855B CN 86107855 A CN86107855 A CN 86107855A CN 86107855 A CN86107855 A CN 86107855A CN 86107855 B CN86107855 B CN 86107855B
Authority
CN
China
Prior art keywords
substrate
layer
mesa
film layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN86107855A
Other languages
English (en)
Chinese (zh)
Other versions
CN86107855A (zh
Inventor
罗伯特·基姆巴尔·库克
约瑟夫·弗朗希斯·施帕德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN86107855A publication Critical patent/CN86107855A/zh
Publication of CN86107855B publication Critical patent/CN86107855B/zh
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/403—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
CN86107855A 1985-11-18 1986-11-14 应用侧壁及去除技术制做亚微米掩模窗口的方法 Expired CN86107855B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US799,053 1985-11-18
US06/799,053 US4654119A (en) 1985-11-18 1985-11-18 Method for making submicron mask openings using sidewall and lift-off techniques

Publications (2)

Publication Number Publication Date
CN86107855A CN86107855A (zh) 1987-08-19
CN86107855B true CN86107855B (zh) 1988-06-29

Family

ID=25174932

Family Applications (1)

Application Number Title Priority Date Filing Date
CN86107855A Expired CN86107855B (zh) 1985-11-18 1986-11-14 应用侧壁及去除技术制做亚微米掩模窗口的方法

Country Status (8)

Country Link
US (1) US4654119A (2)
EP (1) EP0223032A3 (2)
JP (1) JPS62126637A (2)
CN (1) CN86107855B (2)
AU (1) AU576086B2 (2)
BR (1) BR8605249A (2)
CA (1) CA1227456A (2)
IN (1) IN168426B (2)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842633A (en) * 1987-08-25 1989-06-27 Matsushita Electric Industrial Co., Ltd. Method of manufacturing molds for molding optical glass elements and diffraction gratings
DE3888184D1 (de) * 1988-11-17 1994-04-07 Ibm Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich.
US5858256A (en) * 1996-07-11 1999-01-12 The Board Of Trustees Of The Leland Stanford, Jr. University Method of forming small aperture
US5956583A (en) * 1997-06-30 1999-09-21 Fuller; Robert T. Method for forming complementary wells and self-aligned trench with a single mask
US20060191863A1 (en) * 2005-02-25 2006-08-31 Benjamin Szu-Min Lin Method for fabricating etch mask and patterning process using the same
JP4589983B2 (ja) * 2007-06-07 2010-12-01 東京エレクトロン株式会社 微細パターンの形成方法
JP2009094125A (ja) * 2007-10-04 2009-04-30 Elpida Memory Inc 半導体装置の製造方法
JP2013004669A (ja) * 2011-06-15 2013-01-07 Toshiba Corp パターン形成方法、電子デバイスの製造方法及び電子デバイス
CN105226002B (zh) * 2014-07-04 2019-05-21 北大方正集团有限公司 自对准沟槽型功率器件及其制造方法
US10679853B2 (en) * 2018-02-08 2020-06-09 International Business Machines Corporation Self-aligned, over etched hard mask fabrication method and structure
US11056722B2 (en) 2018-02-08 2021-07-06 International Business Machines Corporation Tool and method of fabricating a self-aligned solid state thin film battery
US10720670B2 (en) 2018-02-08 2020-07-21 International Business Machines Corporation Self-aligned 3D solid state thin film battery
JP2024119252A (ja) * 2023-02-22 2024-09-03 東京エレクトロン株式会社 基板処理方法、基板処理システム及び保護膜

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
JPS57130431A (en) * 1981-02-06 1982-08-12 Fujitsu Ltd Manufacture of semiconductor device
US4387145A (en) * 1981-09-28 1983-06-07 Fairchild Camera & Instrument Corp. Lift-off shadow mask
US4430791A (en) * 1981-12-30 1984-02-14 International Business Machines Corporation Sub-micrometer channel length field effect transistor process
JPS5870534A (ja) * 1982-09-27 1983-04-27 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン リフトオフ・シヤドウマスクの形成方法
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
US4572765A (en) * 1983-05-02 1986-02-25 Fairchild Camera & Instrument Corporation Method of fabricating integrated circuit structures using replica patterning
KR890003903B1 (ko) * 1983-06-29 1989-10-10 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques

Also Published As

Publication number Publication date
JPH0543287B2 (2) 1993-07-01
AU5884686A (en) 1987-05-21
IN168426B (2) 1991-03-30
AU576086B2 (en) 1988-08-11
US4654119A (en) 1987-03-31
CN86107855A (zh) 1987-08-19
EP0223032A3 (en) 1990-06-27
BR8605249A (pt) 1987-07-28
CA1227456A (en) 1987-09-29
EP0223032A2 (en) 1987-05-27
JPS62126637A (ja) 1987-06-08

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