CS245264B1 - Method of freely carried distance mask making for diminishing projection systems - Google Patents
Method of freely carried distance mask making for diminishing projection systems Download PDFInfo
- Publication number
- CS245264B1 CS245264B1 CS827076A CS707682A CS245264B1 CS 245264 B1 CS245264 B1 CS 245264B1 CS 827076 A CS827076 A CS 827076A CS 707682 A CS707682 A CS 707682A CS 245264 B1 CS245264 B1 CS 245264B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- layer
- substrate
- nickel
- photoresist
- applying
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 13
- 230000003467 diminishing effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract 13
- 239000002245 particle Substances 0.000 claims abstract 4
- 238000004519 manufacturing process Methods 0.000 claims abstract 3
- 239000011148 porous material Substances 0.000 claims abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 17
- 229910052759 nickel Inorganic materials 0.000 claims 9
- 229920002120 photoresistant polymer Polymers 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 238000005246 galvanizing Methods 0.000 claims 1
- 238000005469 granulation Methods 0.000 claims 1
- 230000003179 granulation Effects 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 101100172132 Mus musculus Eif3a gene Proteins 0.000 description 1
- 235000015250 liver sausages Nutrition 0.000 description 1
- UQJQVUOTMVCFHX-UHFFFAOYSA-L nabam Chemical compound [Na+].[Na+].[S-]C(=S)NCCNC([S-])=S UQJQVUOTMVCFHX-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD81233773A DD206924A3 (de) | 1981-10-01 | 1981-10-01 | Verfahren zum herstellen einer freitragenden abstandsmaske |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS707682A1 CS707682A1 (en) | 1985-06-13 |
| CS245264B1 true CS245264B1 (en) | 1986-09-18 |
Family
ID=5533888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS827076A CS245264B1 (en) | 1981-10-01 | 1982-10-05 | Method of freely carried distance mask making for diminishing projection systems |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4497884A (de) |
| JP (1) | JPS5875837A (de) |
| CS (1) | CS245264B1 (de) |
| DD (1) | DD206924A3 (de) |
| DE (1) | DE3232174A1 (de) |
| FR (1) | FR2515373A1 (de) |
| GB (1) | GB2107618B (de) |
| SU (1) | SU1352445A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272081A (en) * | 1982-05-10 | 1993-12-21 | Bar-Ilan University | System and methods for cell selection |
| US5310674A (en) * | 1982-05-10 | 1994-05-10 | Bar-Ilan University | Apertured cell carrier |
| US4772540A (en) * | 1985-08-30 | 1988-09-20 | Bar Ilan University | Manufacture of microsieves and the resulting microsieves |
| ATA331285A (de) * | 1985-11-13 | 1988-11-15 | Ims Ionen Mikrofab Syst | Verfahren zur herstellung einer transmissionsmaske |
| DE10137493A1 (de) * | 2001-07-31 | 2003-04-10 | Heidenhain Gmbh Dr Johannes | Verfahren zur Herstellung einer selbsttragenden elektronenoptisch durchstrahlbaren Struktur und nach dem Verfahren hergestellte Struktur |
| FR2936361B1 (fr) * | 2008-09-25 | 2011-04-01 | Saint Gobain | Procede de fabrication d'une grille submillimetrique electroconductrice, grille submillimetrique electroconductrice |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2021902A1 (de) * | 1969-05-05 | 1972-08-03 | Gen Electric | Verfahren zum selektiven Durchloechern von Festkoerpern |
| DE2512086C3 (de) * | 1975-03-19 | 1978-11-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung freitragender, dünner Metallstrukturen |
-
1981
- 1981-10-01 DD DD81233773A patent/DD206924A3/de not_active IP Right Cessation
-
1982
- 1982-08-30 DE DE19823232174 patent/DE3232174A1/de not_active Withdrawn
- 1982-09-13 SU SU827772638A patent/SU1352445A1/ru active
- 1982-09-22 US US06/421,542 patent/US4497884A/en not_active Expired - Fee Related
- 1982-10-01 GB GB08229703A patent/GB2107618B/en not_active Expired
- 1982-10-01 JP JP57171084A patent/JPS5875837A/ja active Pending
- 1982-10-01 FR FR8216521A patent/FR2515373A1/fr active Granted
- 1982-10-05 CS CS827076A patent/CS245264B1/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4497884A (en) | 1985-02-05 |
| DD206924A3 (de) | 1984-02-08 |
| GB2107618A (en) | 1983-05-05 |
| JPS5875837A (ja) | 1983-05-07 |
| SU1352445A1 (ru) | 1987-11-15 |
| GB2107618B (en) | 1985-07-10 |
| CS707682A1 (en) | 1985-06-13 |
| DE3232174A1 (de) | 1983-04-21 |
| FR2515373B1 (de) | 1985-04-12 |
| FR2515373A1 (fr) | 1983-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5376483A (en) | Method of making masks for phase shifting lithography | |
| DE112009000965T5 (de) | Reflektive Maske, reflektiver Maskenrohling und Verfahren zum Herstellen einer reflektiven Maske | |
| GB2121198A (en) | Plasma-etch resistant mask formation | |
| GB2094014A (en) | Method of pattern formation | |
| JPS59153A (ja) | プラズマエツチングに耐性を有するレジストマスクを形成する方法 | |
| US6811959B2 (en) | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks | |
| WO2004066364A2 (en) | Binder diffusion patterning of a thick film paste layer | |
| US5699733A (en) | Screen printing on film coated substrates | |
| CA1326155C (en) | High resolution e-beam lithographic technique | |
| CN101419397A (zh) | 制造半调相移掩模的方法 | |
| Randall et al. | Masked ion beam resist exposure using grid support stencil masks | |
| GB2065921A (en) | Method of producing amtt-surfaced light-scattering structures and opaque and/or transparent structures | |
| KR910000839B1 (ko) | 정작용 감광성 내식막 조성물 및 칼라 crt 구조안에서의 광-흡수 매트릭스 형성방법 | |
| US4497884A (en) | Method for the production of a self-supporting mask | |
| EP0518545A1 (de) | Lithographisches Trockenätzverfahren mittels Gasgemischen aus Sauerstoff und Chlor | |
| US3793035A (en) | Method of developing opaquely coated sensitized matrix with periodate containing solution | |
| Hartney et al. | Silylation of focused ion beam exposed resists | |
| KR900002539B1 (ko) | 포지티브형 레지스트 조성물 및 그의 마스크 패턴 형성방법 | |
| DE4028647C2 (de) | Verfahren zum Kopieren von Lochmasken | |
| JP2580681B2 (ja) | 半導体装置の製造方法 | |
| EP0182587B1 (de) | Photolack und Verfahren zur Herstellung einer integrierten Schaltung | |
| JP2005123616A (ja) | 電子ビームプロジェクションリソグラフィ用エミッタ、その作動方法及び製造方法 | |
| SU1051481A1 (ru) | Способ упрочнени копий дифракционных решеток | |
| JPH0792605B2 (ja) | レジストパターン形成方法 | |
| JP6517660B2 (ja) | マスク基板及びマスク基板の製造方法 |