DD121429A5 - - Google Patents
Info
- Publication number
- DD121429A5 DD121429A5 DD189616A DD18961675A DD121429A5 DD 121429 A5 DD121429 A5 DD 121429A5 DD 189616 A DD189616 A DD 189616A DD 18961675 A DD18961675 A DD 18961675A DD 121429 A5 DD121429 A5 DD 121429A5
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU742076968A SU653647A1 (ru) | 1974-11-25 | 1974-11-25 | Способ формировани источника базы при изготовлении транзисторных структур |
| SU7402076899A SU521802A1 (ru) | 1974-11-25 | 1974-11-25 | Способ селективного формировани источника базы при изготовлении транзисторных структур |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD121429A5 true DD121429A5 (cs) | 1976-07-20 |
Family
ID=26665540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD189616A DD121429A5 (cs) | 1974-11-25 | 1975-11-21 |
Country Status (5)
| Country | Link |
|---|---|
| CS (1) | CS180949B1 (cs) |
| DD (1) | DD121429A5 (cs) |
| DE (1) | DE2552641B2 (cs) |
| FR (1) | FR2292333A1 (cs) |
| HU (1) | HU172486B (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2454698A1 (fr) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
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1975
- 1975-11-20 HU HU75JA00000746A patent/HU172486B/hu unknown
- 1975-11-21 DD DD189616A patent/DD121429A5/xx unknown
- 1975-11-21 CS CS7500007915A patent/CS180949B1/cs unknown
- 1975-11-24 FR FR7535846A patent/FR2292333A1/fr active Granted
- 1975-11-24 DE DE2552641A patent/DE2552641B2/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| HU172486B (hu) | 1978-09-28 |
| CS180949B1 (en) | 1978-02-28 |
| FR2292333A1 (fr) | 1976-06-18 |
| DE2552641B2 (de) | 1979-03-29 |
| DE2552641A1 (de) | 1976-06-10 |
| FR2292333B1 (cs) | 1979-02-02 |