DD207938A5 - Verfahren zur herstellung von galliumphosphid-einkristallen - Google Patents

Verfahren zur herstellung von galliumphosphid-einkristallen Download PDF

Info

Publication number: DD207938A5
Authority: DD; German Democratic Republic
Prior art keywords: gallium phosphide; gap; liquid; reduction; gallium
Prior art date: 1981-01-17

Application number

DD82236800A

Other languages

German (de)

English (en)

Inventor

Masayuki Watanabe

Jisaburo Ushizawa

Tsuguo Fukuda

Original Assignee

Tokyo Shibaura Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-01-17

Filing date

1982-01-15

Publication date

1984-03-21

1981-01-17 Priority claimed from JP459281A external-priority patent/JPS6012320B2/ja

1981-09-08 Priority claimed from JP56141296A external-priority patent/JPS5843581A/ja

1982-01-15 Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co

1984-03-21 Publication of DD207938A5 publication Critical patent/DD207938A5/de

Links

229910005540 GaP Inorganic materials 0.000 title claims abstract description 92
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title claims abstract description 31
239000013078 crystal Substances 0.000 title claims abstract description 27
238000000034 method Methods 0.000 title claims description 32
238000002360 preparation method Methods 0.000 title description 3
230000009467 reduction Effects 0.000 claims abstract description 46
239000007788 liquid Substances 0.000 claims abstract description 40
239000000843 powder Substances 0.000 claims abstract description 30
239000001257 hydrogen Substances 0.000 claims abstract description 27
229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 26
229910000154 gallium phosphate Inorganic materials 0.000 claims abstract description 19
LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 claims abstract description 19
239000008393 encapsulating agent Substances 0.000 claims description 21
125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 14
238000004519 manufacturing process Methods 0.000 claims description 12
229910052810 boron oxide Inorganic materials 0.000 claims 1
239000003795 chemical substances by application Substances 0.000 claims 1
JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 1
238000005538 encapsulation Methods 0.000 claims 1
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
239000000463 material Substances 0.000 abstract description 2
239000010410 layer Substances 0.000 description 20
239000007858 starting material Substances 0.000 description 18
238000006243 chemical reaction Methods 0.000 description 16
239000007795 chemical reaction product Substances 0.000 description 12
238000002844 melting Methods 0.000 description 6
230000008018 melting Effects 0.000 description 6
239000002245 particle Substances 0.000 description 6
239000002344 surface layer Substances 0.000 description 4
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
239000012530 fluid Substances 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
239000000155 melt Substances 0.000 description 3
238000010309 melting process Methods 0.000 description 3
229910052750 molybdenum Inorganic materials 0.000 description 3
239000011733 molybdenum Substances 0.000 description 3
239000000047 product Substances 0.000 description 3
239000002994 raw material Substances 0.000 description 3
238000011946 reduction process Methods 0.000 description 3
239000011163 secondary particle Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
239000011230 binding agent Substances 0.000 description 2
238000000354 decomposition reaction Methods 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
239000012535 impurity Substances 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
238000002156 mixing Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
239000000126 substance Substances 0.000 description 2
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000005056 compaction Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
208000014342 histiocytosis-lymphadenopathy plus syndrome Diseases 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
230000000977 initiatory effect Effects 0.000 description 1
238000011835 investigation Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
238000010068 moulding (rubber) Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000001846 repelling effect Effects 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000012360 testing method Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/082—Other phosphides of boron, aluminium, gallium or indium
- C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DD82236800A 1981-01-17 1982-01-15 Verfahren zur herstellung von galliumphosphid-einkristallen DD207938A5 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP459281A JPS6012320B2 (ja)	1981-01-17	1981-01-17	ＧａＰ単結晶の製造方法
JP56141296A JPS5843581A (ja)	1981-09-08	1981-09-08	りん化ガリウム多結晶の製造方法

Publications (1)

Publication Number	Publication Date
DD207938A5 true DD207938A5 (de)	1984-03-21

Family

ID=26338399

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DD82236800A DD207938A5 (de)	1981-01-17	1982-01-15	Verfahren zur herstellung von galliumphosphid-einkristallen

Country Status (5)

Country	Link
US (1)	US4431476A (fr)
EP (1)	EP0056586B1 (fr)
DD (1)	DD207938A5 (fr)
DE (1)	DE3260469D1 (fr)
PL (1)	PL137175B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60251191A (ja) *	1984-05-25	1985-12-11	Res Dev Corp Of Japan	高解離圧化合物単結晶成長方法
JPS61222911A (ja) *	1985-03-28	1986-10-03	Toshiba Corp	燐化化合物の合成方法
JPS623096A (ja) *	1985-06-27	1987-01-09	Res Dev Corp Of Japan	高解離圧化合物半導体単結晶成長方法
US4721539A (en) *	1986-07-15	1988-01-26	The United States Of America As Represented By The United States Department Of Energy	Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) *	1987-03-19	1989-04-25	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Liquid encapsulated crystal growth
US5078830A (en) *	1989-04-10	1992-01-07	Mitsubishi Metal Corporation	Method for growing single crystal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3647389A (en) *	1970-05-11	1972-03-07	Bell Telephone Labor Inc	Method of group iii-v semiconductor crystal growth using getter dried boric oxide encapsulant
JPS6024078B2 (ja) *	1977-09-05	1985-06-11	株式会社東芝	３−５族化合物半導体単結晶の製造装置
JPS6028800B2 (ja) *	1977-10-17	1985-07-06	住友電気工業株式会社	低欠陥密度りん化ガリウム単結晶
JPS55136109A (en) *	1979-04-05	1980-10-23	Toshiba Corp	Production of gap

1982
- 1982-01-04 US US06/336,701 patent/US4431476A/en not_active Expired - Lifetime
- 1982-01-07 EP EP82100073A patent/EP0056586B1/fr not_active Expired
- 1982-01-07 DE DE8282100073T patent/DE3260469D1/de not_active Expired
- 1982-01-15 PL PL1982234725A patent/PL137175B1/pl unknown
- 1982-01-15 DD DD82236800A patent/DD207938A5/de unknown

Also Published As

Publication number	Publication date
EP0056586B1 (fr)	1984-08-01
EP0056586A2 (fr)	1982-07-28
PL234725A1 (fr)	1982-09-13
EP0056586A3 (en)	1982-08-04
PL137175B1 (en)	1986-05-31
DE3260469D1 (en)	1984-09-06
US4431476A (en)	1984-02-14

Legal Events

Date	Code	Title	Description
1998-03-12	RPV	Change in the person, the name or the address of the representative (searches according to art. 11 and 12 extension act)

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