DD208011A5 - Trockenaetzverfahren und -vorrichtung - Google Patents

Trockenaetzverfahren und -vorrichtung Download PDF

Info

Publication number: DD208011A5
Authority: DD; German Democratic Republic
Prior art keywords: cathode; magnetic field; workpiece; sample; etching
Prior art date: 1980-12-11

Application number

DD81235634A

Other languages

German (de)

English (en)

Inventor

Haruo Okano

Yasuhiro Horiike

Original Assignee

Tokyo Shibaura Electric Co

Horikawa Cho

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-12-11

Filing date

1981-12-10

Publication date

1984-03-21

1980-12-11 Priority claimed from JP17382180A external-priority patent/JPS6011109B2/ja

1981-09-25 Priority claimed from JP15080181A external-priority patent/JPS5855567A/ja

1981-12-10 Application filed by Tokyo Shibaura Electric Co, Horikawa Cho filed Critical Tokyo Shibaura Electric Co

1984-03-21 Publication of DD208011A5 publication Critical patent/DD208011A5/de

Links

238000001035 drying Methods 0.000 title 1
238000000034 method Methods 0.000 claims abstract description 47
238000001312 dry etching Methods 0.000 claims abstract description 20
230000005684 electric field Effects 0.000 claims abstract description 12
238000006243 chemical reaction Methods 0.000 claims abstract description 11
238000005530 etching Methods 0.000 claims description 80
150000002500 ions Chemical class 0.000 claims description 11
230000001939 inductive effect Effects 0.000 claims description 6
239000000696 magnetic material Substances 0.000 claims description 5
230000000694 effects Effects 0.000 claims description 3
210000004072 lung Anatomy 0.000 claims 1
230000005611 electricity Effects 0.000 abstract description 2
150000001875 compounds Chemical class 0.000 abstract 1
239000007789 gas Substances 0.000 description 29
239000000523 sample Substances 0.000 description 16
229910004298 SiO 2 Inorganic materials 0.000 description 14
230000001965 increasing effect Effects 0.000 description 9
239000000758 substrate Substances 0.000 description 6
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
239000000463 material Substances 0.000 description 5
239000000460 chlorine Substances 0.000 description 4
230000006698 induction Effects 0.000 description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
229910052799 carbon Inorganic materials 0.000 description 3
229910052801 chlorine Inorganic materials 0.000 description 3
238000001816 cooling Methods 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
239000011368 organic material Substances 0.000 description 3
229920002120 photoresistant polymer Polymers 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
229910000838 Al alloy Inorganic materials 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000002699 waste material Substances 0.000 description 2
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
102100027988 GTP-binding protein Rhes Human genes 0.000 description 1
101000578396 Homo sapiens GTP-binding protein Rhes Proteins 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
239000000969 carrier Substances 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000010411 cooking Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010494 dissociation reaction Methods 0.000 description 1
230000005593 dissociations Effects 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910021344 molybdenum silicide Inorganic materials 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
238000009423 ventilation Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Drying Of Semiconductors (AREA)

DD81235634A 1980-12-11 1981-12-10 Trockenaetzverfahren und -vorrichtung DD208011A5 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP17382180A JPS6011109B2 (ja)	1980-12-11	1980-12-11	ドライエツチング方法及び装置
JP15080181A JPS5855567A (ja)	1981-09-25	1981-09-25	プラズマエツチング方法

Publications (1)

Publication Number	Publication Date
DD208011A5 true DD208011A5 (de)	1984-03-21

Family

ID=26480278

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DD81235634A DD208011A5 (de)	1980-12-11	1981-12-10	Trockenaetzverfahren und -vorrichtung

Country Status (4)

Country	Link
US (1)	US4492610A (fr)
EP (1)	EP0054201B1 (fr)
DD (1)	DD208011A5 (fr)
DE (1)	DE3175576D1 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CH658545A5 (de) *	1982-09-10	1986-11-14	Balzers Hochvakuum	Verfahren zum gleichmaessigen erwaermen von heizgut in einem vakuumrezipienten.
US4554047A (en) *	1984-10-12	1985-11-19	At&T Bell Laboratories	Downstream apparatus and technique
US4572759A (en) *	1984-12-26	1986-02-25	Benzing Technology, Inc.	Troide plasma reactor with magnetic enhancement
NL8500771A (nl) *	1985-03-18	1986-10-16	Philips Nv	Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
US4668338A (en) *	1985-12-30	1987-05-26	Applied Materials, Inc.	Magnetron-enhanced plasma etching process
JPH0834205B2 (ja) *	1986-11-21	1996-03-29	株式会社東芝	ドライエツチング装置
EP0272143B1 (fr) *	1986-12-19	1999-03-17	Applied Materials, Inc.	Procédé de décapage par bromine pour silicium
US5215619A (en) *	1986-12-19	1993-06-01	Applied Materials, Inc.	Magnetic field-enhanced plasma etch reactor
JPS63183181A (ja) *	1987-01-23	1988-07-28	Anelva Corp	マグネトロンスパツタエツチング装置
JPH01302726A (ja) *	1988-02-10	1989-12-06	Japan Synthetic Rubber Co Ltd	反応性イオンエッチング装置
DE68912400T2 (de) *	1988-05-23	1994-08-18	Nippon Telegraph & Telephone	Plasmaätzvorrichtung.
US4983253A (en) *	1988-05-27	1991-01-08	University Of Houston-University Park	Magnetically enhanced RIE process and apparatus
KR910002310A (ko) *	1988-06-29	1991-01-31	미다 가쓰시게	플라즈마 처리장치
DE3834984A1 (de) *	1988-10-14	1990-04-19	Leybold Ag	Einrichtung zur erzeugung von elektrisch geladenen und/oder ungeladenen teilchen
US5130005A (en) *	1990-10-31	1992-07-14	Materials Research Corporation	Magnetron sputter coating method and apparatus with rotating magnet cathode
US5032205A (en) *	1989-05-05	1991-07-16	Wisconsin Alumni Research Foundation	Plasma etching apparatus with surface magnetic fields
US5332441A (en) *	1991-10-31	1994-07-26	International Business Machines Corporation	Apparatus for gettering of particles during plasma processing
BE1007675A3 (nl) *	1993-10-28	1995-09-12	Philips Electronics Nv	Werkwijze voor het vervaardigen van preparaten voor een elektronenmicroscoop.
JP3322181B2 (ja) *	1997-09-17	2002-09-09	インターナショナル・ビジネス・マシーンズ・コーポレーション	ドライエッチング方法および装置
US6156154A (en) *	1998-06-24	2000-12-05	Seagate Technology, Inc.	Apparatus for etching discs and pallets prior to sputter deposition
US6545468B2 (en) *	2001-08-02	2003-04-08	Taiwan Semiconductor Manufacturing Co., Ltd	Calibration method for magnetically enhanced reactive ion etcher
JP2003234331A (ja) *	2001-12-05	2003-08-22	Tokyo Electron Ltd	プラズマエッチング方法およびプラズマエッチング装置
US7059268B2 (en) *	2002-12-20	2006-06-13	Tokyo Electron Limited	Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US7029536B2 (en) *	2003-03-17	2006-04-18	Tokyo Electron Limited	Processing system and method for treating a substrate
EP1998373A3 (fr) *	2005-09-29	2012-10-31	Semiconductor Energy Laboratory Co, Ltd.	Dispositif de semi-conducteur disposant d'une couche de semi-conducteur d'oxyde et son procédé de fabrication
US7631898B2 (en) *	2006-01-25	2009-12-15	Chrysler Group Llc	Power release and locking adjustable steering column apparatus and method
US8343280B2 (en)	2006-03-28	2013-01-01	Tokyo Electron Limited	Multi-zone substrate temperature control system and method of operating
US7718032B2 (en)	2006-06-22	2010-05-18	Tokyo Electron Limited	Dry non-plasma treatment system and method of using
US8287688B2 (en)	2008-07-31	2012-10-16	Tokyo Electron Limited	Substrate support for high throughput chemical treatment system
US8323410B2 (en) *	2008-07-31	2012-12-04	Tokyo Electron Limited	High throughput chemical treatment system and method of operating
US8115140B2 (en) *	2008-07-31	2012-02-14	Tokyo Electron Limited	Heater assembly for high throughput chemical treatment system
US8303715B2 (en) *	2008-07-31	2012-11-06	Tokyo Electron Limited	High throughput thermal treatment system and method of operating
US8303716B2 (en)	2008-07-31	2012-11-06	Tokyo Electron Limited	High throughput processing system for chemical treatment and thermal treatment and method of operating
US20130240147A1 (en) *	2012-03-19	2013-09-19	Sang Ki Nam	Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3669861A (en) *	1967-08-28	1972-06-13	Texas Instruments Inc	R. f. discharge cleaning to improve adhesion
US3968018A (en) *	1969-09-29	1976-07-06	Warner-Lambert Company	Sputter coating method
US3708418A (en) *	1970-03-05	1973-01-02	Rca Corp	Apparatus for etching of thin layers of material by ion bombardment
US3757733A (en) *	1971-10-27	1973-09-11	Texas Instruments Inc	Radial flow reactor
US3855612A (en) *	1972-01-03	1974-12-17	Signetics Corp	Schottky barrier diode semiconductor structure and method
US4011143A (en) *	1973-06-25	1977-03-08	Honeywell Inc.	Material deposition masking for microcircuit structures
US4069096A (en) *	1975-11-03	1978-01-17	Texas Instruments Incorporated	Silicon etching process
US4126530A (en) *	1977-08-04	1978-11-21	Telic Corporation	Method and apparatus for sputter cleaning and bias sputtering
DE2735525A1 (de) *	1977-08-06	1979-02-22	Leybold Heraeus Gmbh & Co Kg	Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
DE2862150D1 (en) *	1977-10-06	1983-02-17	Ibm	Method for reactive ion etching of an element
US4312731A (en) *	1979-04-24	1982-01-26	Vac-Tec Systems, Inc.	Magnetically enhanced sputtering device and method
JPS5940227B2 (ja) *	1980-06-24	1984-09-28	富士通株式会社	リアクティブスパッタリング方法

1981
- 1981-11-25 EP EP81109891A patent/EP0054201B1/fr not_active Expired
- 1981-11-25 DE DE8181109891T patent/DE3175576D1/de not_active Expired
- 1981-12-10 DD DD81235634A patent/DD208011A5/de unknown
1983
- 1983-12-12 US US06/559,857 patent/US4492610A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0054201A3 (en)	1983-04-06
DE3175576D1 (en)	1986-12-11
EP0054201A2 (fr)	1982-06-23
EP0054201B1 (fr)	1986-11-05
US4492610A (en)	1985-01-08

Publication	Publication Date	Title
DD208011A5 (de)	1984-03-21	Trockenaetzverfahren und -vorrichtung
DE69124178T2 (de)	1997-06-05	Gerät zur Magnetronplasmabearbeitung
DE68915014T2 (de)	1994-12-08	Gerät zur Bildung dünner Schichten und durch Mikrowellen-Zerstäubung arbeitende Ionenquelle.
DE3920835C2 (de)	1997-12-18	Einrichtung zum Beschichten von Substraten
EP0349556B1 (fr)	1993-11-18	Procede et dispositif de traitement de la surface de semi-conducteurs par bombardement de particules
EP0015403B1 (fr)	1983-10-26	Procédé de décapage de silicium par ions réactifs
DE3750321T2 (de)	1995-01-26	Elektrodenaufbau und Vorrichtung dazu.
EP0021140A1 (fr)	1981-01-07	Source ionique dans une chambre sous vide et procédé pour son fonctionnement
DE2943862A1 (de)	1980-05-08	Ionenquelle und ionenaetzverfahren
DE3913463C2 (fr)	1992-05-07
DE4201661A1 (de)	1992-07-30	Verfahren zur herstellung einer halbleiteranordnung
DE3117252A1 (de)	1982-08-12	Plasmaauftragvorrichtung
DE2720893B2 (fr)	1979-07-12
DE4426594C2 (de)	2003-08-28	Schaltvorrichtung
DE2800180A1 (de)	1978-07-13	Duennschicht-aetzverfahren durch plasmazersetzung eines gases
DE69322058T2 (de)	1999-07-01	Plasma-Ätzverfahren
DE3140890A1 (de)	1982-06-16	Verfahren zum herstellen einer integrierten schaltungsvorrichtung
DE2203080A1 (de)	1972-09-28	Verfahren zum Herstellen einer Schicht mit bestimmter Dicke auf einer Unterlage
DE1640486C3 (de)	1975-09-11	Verfahren zum reaktiven Zerstäuben von elementarem Silicium
DE69802313T2 (de)	2002-08-14	Verfahren und Vorrichtung zur Verbesserung der Seitenwandbedeckung während des Sputterns in einer Kammer mit induktiv gekoppeltem Plasma
DE4230291A1 (de)	1994-03-17	Mikrowellenunterstützte Zerstäubungsanordnung
DE3688860T2 (de)	1993-11-25	Mittels Elektronenstrahl angeregte Ionenstrahlquelle.
EP0371252B1 (fr)	1992-09-16	Procédé et appareil pour le décapage de substrats à l'aide d'une décharge à basse pression assistée par un champ magnétique
DE3046629C2 (de)	1985-04-04	Verfahren zur Herstellung von Isolatoroberflächen
EP2087503B1 (fr)	2013-12-11	Dispositif de prétraitement de substrats