DE69028131D1 - Treiberschaltung für eine bipolare Transistorvorrichtung mit isoliertem Gate - Google Patents

Treiberschaltung für eine bipolare Transistorvorrichtung mit isoliertem Gate

Info

Publication number
DE69028131D1
DE69028131D1 DE69028131T DE69028131T DE69028131D1 DE 69028131 D1 DE69028131 D1 DE 69028131D1 DE 69028131 T DE69028131 T DE 69028131T DE 69028131 T DE69028131 T DE 69028131T DE 69028131 D1 DE69028131 D1 DE 69028131D1
Authority
DE
Germany
Prior art keywords
driver circuit
bipolar transistor
insulated gate
gate bipolar
transistor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028131T
Other languages
English (en)
Other versions
DE69028131T2 (de
Inventor
Gourab Majumdar
Shigekazu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69028131D1 publication Critical patent/DE69028131D1/de
Publication of DE69028131T2 publication Critical patent/DE69028131T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
DE69028131T 1989-04-13 1990-04-12 Treiberschaltung für eine bipolare Transistorvorrichtung mit isoliertem Gate Expired - Fee Related DE69028131T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9371189 1989-04-13

Publications (2)

Publication Number Publication Date
DE69028131D1 true DE69028131D1 (de) 1996-09-26
DE69028131T2 DE69028131T2 (de) 1997-03-06

Family

ID=14090006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028131T Expired - Fee Related DE69028131T2 (de) 1989-04-13 1990-04-12 Treiberschaltung für eine bipolare Transistorvorrichtung mit isoliertem Gate

Country Status (3)

Country Link
US (1) US5055721A (de)
EP (1) EP0392530B1 (de)
DE (1) DE69028131T2 (de)

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JPH0821620B2 (ja) * 1990-05-21 1996-03-04 三菱電機株式会社 半導体装置
FI90605C (fi) * 1991-12-09 1994-02-25 Abb Stroemberg Drives Oy Puolijohdekytkimen ohjauspiiri
US5500619A (en) * 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
GB9215654D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A semiconductor component
DE69207410T2 (de) * 1992-09-18 1996-08-29 Cons Ric Microelettronica Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
US5347166A (en) * 1993-02-01 1994-09-13 Electric Power Research Institute Apparatus and method for switching high power levels
JP3361874B2 (ja) * 1994-02-28 2003-01-07 三菱電機株式会社 電界効果型半導体装置
DE4428675A1 (de) * 1994-08-12 1996-02-15 Siemens Ag Schaltungsanordnung zum Schutz eines abschaltbaren Leistungshalbleiter-Schalters vor Überspannungen
JP3222330B2 (ja) * 1994-09-20 2001-10-29 株式会社日立製作所 半導体回路及び半導体集積回路
US5731729A (en) * 1995-01-13 1998-03-24 Ixys Corporation Voltage transient suppression circuit for preventing overvoltages in power transistor systems
DE19512679C1 (de) * 1995-04-07 1996-11-21 Abb Management Ag Stromleiteranordnung
JPH08308253A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp スイッチング半導体装置
CA2172890C (en) * 1995-06-06 2005-02-22 Harold R. Schnetzka Switch driver circuit
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
JP3469373B2 (ja) * 1995-10-31 2003-11-25 三菱電機株式会社 半導体パワーモジュールおよび複合パワーモジュール
US5723916A (en) * 1996-05-17 1998-03-03 Delco Electronics Corporation Electrical load driving device including load current limiting circuitry
US5847942A (en) * 1996-05-30 1998-12-08 Unitrode Corporation Controller for isolated boost converter with improved detection of RMS input voltage for distortion reduction and having load-dependent overlap conduction delay of shunt MOSFET
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
CN1191394A (zh) * 1997-02-20 1998-08-26 杨泰和 藉前置光－电转换元件驱动的绝缘栅双极晶体管
JP3447949B2 (ja) * 1998-03-31 2003-09-16 株式会社東芝 絶縁ゲート型半導体素子のゲート駆動回路、電力変換装置
EA200100030A1 (ru) * 1998-06-12 2001-06-25 Саут Айлэнд Дискритс Лимитед Возбуждение затвора для мощных полупроводниковых приборов с изолированным затвором
JP3432425B2 (ja) * 1998-08-05 2003-08-04 株式会社東芝 ゲート回路
DE19849097A1 (de) * 1998-10-24 2000-04-27 Abb Daimler Benz Transp Verfahren zur Schaltzustandsüberwachung eines IGBT und Vorrichtung zur Durchführung des Verfahrens
US6809571B2 (en) * 2001-10-01 2004-10-26 International Rectifier Corporation Power control circuit with active impedance to avoid interference and sensing problems
US6531895B1 (en) * 2002-02-08 2003-03-11 Delphi Technologies, Inc. Isolated gate drive circuit having a switched input capacitor
EP1803222A2 (de) * 2004-10-12 2007-07-04 Koninklijke Philips Electronics N.V. Schnelle niederspannungs-ausgangsstufe für einen laser oder modulatoransteuerung
DE102007063721B4 (de) 2006-03-22 2014-05-08 Denso Corporation Schaltkreis mit einem Transistor und einer Ansteuerschaltung zur Ansteuerung des Transistors
GB0617990D0 (en) * 2006-09-13 2006-10-18 Palmer Patrick R Control of power semiconductor devices
US7466185B2 (en) * 2006-10-23 2008-12-16 Infineon Technologies Ag IGBT-Driver circuit for desaturated turn-off with high desaturation level
CN102498668A (zh) * 2009-09-15 2012-06-13 三菱电机株式会社 栅极驱动电路
IT1402879B1 (it) 2010-11-19 2013-09-27 St Microelectronics Srl Dispositivo igbt con regioni di emettitore sepolte
JP5582123B2 (ja) * 2011-10-05 2014-09-03 三菱電機株式会社 半導体装置
DE102013216672A1 (de) * 2013-08-22 2015-02-26 Siemens Aktiengesellschaft Elektronischer Schalter mit einem IGBT
CN103546020B (zh) * 2013-10-28 2016-08-31 北京京铁信达铁路设备有限公司 高压igbt驱动及保护电路
WO2015079882A1 (ja) * 2013-11-29 2015-06-04 日産自動車株式会社 スイッチング装置
US9720030B2 (en) 2015-06-08 2017-08-01 Nxp Usa, Inc. Systems and methods for testing a clamp function for insulated gate bipolar transistors
JP7749979B2 (ja) * 2021-08-18 2025-10-07 富士電機株式会社 駆動装置

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Publication number Priority date Publication date Assignee Title
US4301490A (en) * 1979-07-09 1981-11-17 American Standard Inc. Electronic overload protection circuit
US4612457A (en) * 1983-06-27 1986-09-16 Texas Instruments Incorporated Current limiting output buffer for integrated circuit
US4591734A (en) * 1984-04-27 1986-05-27 General Electric Company Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
KR900008276B1 (ko) * 1985-02-08 1990-11-10 가부시끼가이샤 도시바 2단계차단동작을이용한절연게이트바이폴라트랜지스터용보호회로
JPS6395722A (ja) * 1986-10-13 1988-04-26 Fuji Electric Co Ltd Ｉｇｂｔ素子の過電流保護回路
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device

Also Published As

Publication number Publication date
EP0392530A2 (de) 1990-10-17
DE69028131T2 (de) 1997-03-06
EP0392530B1 (de) 1996-08-21
US5055721A (en) 1991-10-08
EP0392530A3 (de) 1991-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee