DE69132995D1 - Kontakt für Halbleiteranordnung und Verfahren zur Herstellung - Google Patents

Kontakt für Halbleiteranordnung und Verfahren zur Herstellung

Info

Publication number
DE69132995D1
DE69132995D1 DE69132995T DE69132995T DE69132995D1 DE 69132995 D1 DE69132995 D1 DE 69132995D1 DE 69132995 T DE69132995 T DE 69132995T DE 69132995 T DE69132995 T DE 69132995T DE 69132995 D1 DE69132995 D1 DE 69132995D1
Authority
DE
Germany
Prior art keywords
manufacturing
contact
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132995T
Other languages
English (en)
Other versions
DE69132995T2 (de
Inventor
Tomoyuki Furuhata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69132995D1 publication Critical patent/DE69132995D1/de
Application granted granted Critical
Publication of DE69132995T2 publication Critical patent/DE69132995T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
DE69132995T 1990-11-28 1991-11-26 Kontakt für Halbleiteranordnung und Verfahren zur Herstellung Expired - Fee Related DE69132995T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32809590 1990-11-28
JP32809690 1990-11-28
JP12095991 1991-05-27
JP12095891 1991-05-27

Publications (2)

Publication Number Publication Date
DE69132995D1 true DE69132995D1 (de) 2002-05-29
DE69132995T2 DE69132995T2 (de) 2002-10-31

Family

ID=27470736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132995T Expired - Fee Related DE69132995T2 (de) 1990-11-28 1991-11-26 Kontakt für Halbleiteranordnung und Verfahren zur Herstellung

Country Status (6)

Country Link
US (1) US5315150A (de)
EP (1) EP0488154B1 (de)
JP (1) JP3144000B2 (de)
KR (1) KR100232910B1 (de)
DE (1) DE69132995T2 (de)
TW (1) TW438049U (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220067T2 (de) * 1992-11-18 1997-09-11 Sgs Thomson Microelectronics Herstellung von direkte Kontakten in hoher Dichte MOS/CMOS Verfahren
US5541137A (en) * 1994-03-24 1996-07-30 Micron Semiconductor Inc. Method of forming improved contacts from polysilicon to silicon or other polysilicon layers
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up
US5525552A (en) * 1995-06-08 1996-06-11 Taiwan Semiconductor Manufacturing Company Method for fabricating a MOSFET device with a buried contact
US5895766A (en) 1995-09-20 1999-04-20 Micron Technology, Inc. Method of forming a field effect transistor
US5652152A (en) * 1996-04-22 1997-07-29 Chartered Semiconductor Manufacturing Pte, Ltd. Process having high tolerance to buried contact mask misalignment by using a PSG spacer
US5721146A (en) * 1996-04-29 1998-02-24 Taiwan Semiconductor Manufacturing Company Ltd Method of forming buried contact architecture within a trench
US6211556B1 (en) * 1998-04-23 2001-04-03 Texas Instruments - Acer Incorporated Eliminating buried contact trench in MOSFET devices having self-aligned silicide
US6153934A (en) * 1998-07-30 2000-11-28 International Business Machines Corporation Buried butted contact and method for fabricating
JP2002198436A (ja) * 2000-12-25 2002-07-12 Sanyo Electric Co Ltd 半導体集積回路装置およびその製造方法
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
JP2014093739A (ja) * 2012-11-06 2014-05-19 Nagase Techno-Engineering Co Ltd 集音装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7611774A (en) * 1976-10-25 1978-02-28 Philips Nv FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture
JPS60219771A (ja) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Ｍｏｓ形半導体装置の製造方法
JPS6113668A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd 半導体装置
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
JPH01147829A (ja) * 1987-12-04 1989-06-09 Toshiba Corp 半導体装置の製造方法
JP2508818B2 (ja) * 1988-10-03 1996-06-19 三菱電機株式会社 半導体装置の製造方法
JPH03194974A (ja) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd Ｍｏｓ型半導体装置

Also Published As

Publication number Publication date
EP0488154B1 (de) 2002-04-24
JPH0541486A (ja) 1993-02-19
TW438049U (en) 2001-05-28
US5315150A (en) 1994-05-24
EP0488154A2 (de) 1992-06-03
KR100232910B1 (ko) 1999-12-01
DE69132995T2 (de) 2002-10-31
EP0488154A3 (en) 1993-04-07
HK1013890A1 (en) 1999-09-10
JP3144000B2 (ja) 2001-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee