DE69920792D1 - Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein - Google Patents

Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein

Info

Publication number
DE69920792D1
DE69920792D1 DE69920792T DE69920792T DE69920792D1 DE 69920792 D1 DE69920792 D1 DE 69920792D1 DE 69920792 T DE69920792 T DE 69920792T DE 69920792 T DE69920792 T DE 69920792T DE 69920792 D1 DE69920792 D1 DE 69920792D1
Authority
DE
Germany
Prior art keywords
power amplifier
frequency power
amplifier circuit
amplifier module
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920792T
Other languages
English (en)
Other versions
DE69920792T2 (de
Inventor
Hitoshi Ebihara
Masaki Naganuma
Masanobu Kaneko
Fumitaka Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Publication of DE69920792D1 publication Critical patent/DE69920792D1/de
Application granted granted Critical
Publication of DE69920792T2 publication Critical patent/DE69920792T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
DE69920792T 1998-04-10 1999-04-07 Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkermodul Expired - Fee Related DE69920792T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9905398 1998-04-10
JP09905398A JP3668610B2 (ja) 1998-04-10 1998-04-10 高周波電力増幅回路

Publications (2)

Publication Number Publication Date
DE69920792D1 true DE69920792D1 (de) 2004-11-11
DE69920792T2 DE69920792T2 (de) 2006-02-23

Family

ID=14236887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920792T Expired - Fee Related DE69920792T2 (de) 1998-04-10 1999-04-07 Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkermodul

Country Status (6)

Country Link
US (1) US6249186B1 (de)
EP (1) EP0949754B1 (de)
JP (1) JP3668610B2 (de)
KR (1) KR100527223B1 (de)
DE (1) DE69920792T2 (de)
DK (1) DK0949754T3 (de)

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US6674337B2 (en) * 2000-03-28 2004-01-06 California Institute Of Technology Concurrent multi-band low noise amplifier architecture
US6798313B2 (en) * 2001-06-04 2004-09-28 U.S. Monolithics, L.L.C. Monolithic microwave integrated circuit with bondwire and landing zone bias
DE10161743B4 (de) 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
US6670850B1 (en) * 2002-06-13 2003-12-30 Linear Technology Corp. Ultra-wideband constant gain CMOS amplifier
US7064611B2 (en) * 2003-04-12 2006-06-20 Chung-Shan Institute Of Science And Technology IDSS RF amplifier
JP4253324B2 (ja) * 2003-06-10 2009-04-08 株式会社東芝 高周波電力増幅器モジュール
US20070003582A1 (en) * 2003-11-25 2007-01-04 Heng Madalene C Medicine for the treatment of acne and for reversing the signs of age and sun damage and method for using same
US7265630B2 (en) * 2003-12-09 2007-09-04 International Business Machines Corporation Millimeter-wave unilateral low-noise amplifier
US20060038632A1 (en) * 2004-08-20 2006-02-23 Dow-Chih Niu Series-parallel resonant matching circuit and broadband amplifier thereof
US8150643B1 (en) 2004-12-21 2012-04-03 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
US8352204B2 (en) * 2004-12-21 2013-01-08 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
US8868363B2 (en) * 2009-06-11 2014-10-21 Battelle Energy Alliance, Llc Method of estimating pulse response using an impedance spectrum
US9851414B2 (en) 2004-12-21 2017-12-26 Battelle Energy Alliance, Llc Energy storage cell impedance measuring apparatus, methods and related systems
JP2007150419A (ja) * 2005-11-24 2007-06-14 Mitsubishi Electric Corp 電力増幅器
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
US10379168B2 (en) 2007-07-05 2019-08-13 Battelle Energy Alliance, Llc Apparatuses and methods for testing electrochemical cells by measuring frequency response
WO2011140131A1 (en) 2010-05-03 2011-11-10 Battelle Energy Alliance, Llc Crosstalk compensation in analysis of energy storage devices
JP5541114B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 電力増幅器とそれを用いたｍｍｉｃ
US8466747B1 (en) * 2011-04-08 2013-06-18 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8963645B1 (en) 2011-04-08 2015-02-24 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US9035702B2 (en) * 2012-03-08 2015-05-19 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
CN103929132B (zh) * 2014-04-24 2016-12-07 成都锦江电子系统工程有限公司 基于带状线方式的小型大功率微波放大模块
US10345384B2 (en) 2016-03-03 2019-07-09 Battelle Energy Alliance, Llc Device, system, and method for measuring internal impedance of a test battery using frequency response
US10656233B2 (en) 2016-04-25 2020-05-19 Dynexus Technology, Inc. Method of calibrating impedance measurements of a battery
US11054481B2 (en) 2019-03-19 2021-07-06 Battelle Energy Alliance, Llc Multispectral impedance determination under dynamic load conditions
DE112019007087B4 (de) 2019-03-25 2023-12-28 Mitsubishi Electric Corporation Hochfrequenz-Halbleiterverstärker
US12000902B2 (en) 2019-05-02 2024-06-04 Dynexus Technology, Inc. Multispectral impedance determination under dynamic load conditions
KR102895216B1 (ko) 2019-05-02 2025-12-04 다이넥서스 테크놀러지, 인코포레이티드. 광대역 임피던스 측정용 강화 처프 여기 신호
US11422102B2 (en) 2020-01-10 2022-08-23 Dynexus Technology, Inc. Multispectral impedance measurements across strings of interconnected cells
US11519969B2 (en) 2020-01-29 2022-12-06 Dynexus Technology, Inc. Cross spectral impedance assessment for cell qualification
US11757419B2 (en) * 2020-02-25 2023-09-12 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency power amplifier circuit and gain control method
US12149213B2 (en) * 2021-06-02 2024-11-19 Murata Manufacturing Co., Ltd. Wideband multi gain LNA architecture
JP7700614B2 (ja) * 2021-10-01 2025-07-01 住友電気工業株式会社 高周波回路

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US5202649A (en) * 1991-03-20 1993-04-13 Mitsubishi Denki Kabushiki Kaisha Microwave integrated circuit device having impedance matching
US5111157A (en) * 1991-05-01 1992-05-05 General Electric Company Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels
JPH05299944A (ja) * 1991-05-30 1993-11-12 Nec Corp Ｒｆ電力増幅器
JP2643662B2 (ja) * 1991-07-08 1997-08-20 三菱電機株式会社 高出力電界効果トランジスタ増幅器
US5276406A (en) * 1992-02-13 1994-01-04 Trontech, Inc. Low noise wide dynamic range amplifiers
JPH05315855A (ja) 1992-05-07 1993-11-26 Nec Corp 高周波電力増幅器
DE69321921T2 (de) * 1992-12-03 1999-05-27 Koninklijke Philips Electronics N.V., Eindhoven In Kaskadenschaltung verwendbare kompakte Mikrowellenverstärkerschaltung
US5339047A (en) * 1993-02-18 1994-08-16 The United States Of America As Represented By The Secretary Of The Army X-band bipolar junction transistor amplifier
JPH07202585A (ja) 1993-12-28 1995-08-04 Nec Corp 高周波電力増幅回路
US5546049A (en) * 1995-03-31 1996-08-13 Hughes Aircraft Company Frequency scalable pre-matched transistor
KR100197187B1 (ko) * 1995-04-05 1999-06-15 모리 가즈히로 고주파전력 증폭회로장치
JP3515854B2 (ja) * 1995-04-05 2004-04-05 松下電器産業株式会社 高周波電力増幅回路装置
JPH09199956A (ja) 1995-10-13 1997-07-31 Matsushita Electron Corp 高周波電力増幅器
JPH09162657A (ja) 1995-12-12 1997-06-20 Toshiba Corp マイクロ波電力増幅回路
US5796165A (en) * 1996-03-19 1998-08-18 Matsushita Electronics Corporation High-frequency integrated circuit device having a multilayer structure
JP3336868B2 (ja) * 1996-08-09 2002-10-21 株式会社村田製作所 周波数の異なる複数の信号に整合する高周波増幅器
JPH1056341A (ja) * 1996-08-09 1998-02-24 Nec Corp 電力増幅装置
JP3515886B2 (ja) * 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0949754A3 (de) 2002-07-24
KR100527223B1 (ko) 2005-11-08
KR19990083035A (ko) 1999-11-25
JP3668610B2 (ja) 2005-07-06
JPH11298263A (ja) 1999-10-29
EP0949754A2 (de) 1999-10-13
HK1021594A1 (en) 2000-06-16
DK0949754T3 (da) 2004-11-15
DE69920792T2 (de) 2006-02-23
EP0949754B1 (de) 2004-10-06
US6249186B1 (en) 2001-06-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee