DK0949754T3 - Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul - Google Patents

Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul

Info

Publication number
DK0949754T3
DK0949754T3 DK99106877T DK99106877T DK0949754T3 DK 0949754 T3 DK0949754 T3 DK 0949754T3 DK 99106877 T DK99106877 T DK 99106877T DK 99106877 T DK99106877 T DK 99106877T DK 0949754 T3 DK0949754 T3 DK 0949754T3
Authority
DK
Denmark
Prior art keywords
high frequency
power amplifier
frequency power
amplifier circuit
amplifier module
Prior art date
Application number
DK99106877T
Other languages
Danish (da)
English (en)
Inventor
Hitoshi Ebihara
Masaki Naganuma
Masanobu Kaneko
Fumitaka Iizuka
Original Assignee
Taiyo Yuden Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Kk filed Critical Taiyo Yuden Kk
Application granted granted Critical
Publication of DK0949754T3 publication Critical patent/DK0949754T3/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
DK99106877T 1998-04-10 1999-04-07 Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul DK0949754T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09905398A JP3668610B2 (ja) 1998-04-10 1998-04-10 高周波電力増幅回路
EP99106877A EP0949754B1 (de) 1998-04-10 1999-04-07 Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein

Publications (1)

Publication Number Publication Date
DK0949754T3 true DK0949754T3 (da) 2004-11-15

Family

ID=14236887

Family Applications (1)

Application Number Title Priority Date Filing Date
DK99106877T DK0949754T3 (da) 1998-04-10 1999-04-07 Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul

Country Status (6)

Country Link
US (1) US6249186B1 (de)
EP (1) EP0949754B1 (de)
JP (1) JP3668610B2 (de)
KR (1) KR100527223B1 (de)
DE (1) DE69920792T2 (de)
DK (1) DK0949754T3 (de)

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US6798313B2 (en) 2001-06-04 2004-09-28 U.S. Monolithics, L.L.C. Monolithic microwave integrated circuit with bondwire and landing zone bias
DE10161743B4 (de) 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
US6670850B1 (en) * 2002-06-13 2003-12-30 Linear Technology Corp. Ultra-wideband constant gain CMOS amplifier
US7064611B2 (en) * 2003-04-12 2006-06-20 Chung-Shan Institute Of Science And Technology IDSS RF amplifier
JP4253324B2 (ja) * 2003-06-10 2009-04-08 株式会社東芝 高周波電力増幅器モジュール
US20070003582A1 (en) * 2003-11-25 2007-01-04 Heng Madalene C Medicine for the treatment of acne and for reversing the signs of age and sun damage and method for using same
US7265630B2 (en) * 2003-12-09 2007-09-04 International Business Machines Corporation Millimeter-wave unilateral low-noise amplifier
US20060038632A1 (en) * 2004-08-20 2006-02-23 Dow-Chih Niu Series-parallel resonant matching circuit and broadband amplifier thereof
US8868363B2 (en) * 2009-06-11 2014-10-21 Battelle Energy Alliance, Llc Method of estimating pulse response using an impedance spectrum
US8150643B1 (en) * 2004-12-21 2012-04-03 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
US9851414B2 (en) 2004-12-21 2017-12-26 Battelle Energy Alliance, Llc Energy storage cell impedance measuring apparatus, methods and related systems
US8352204B2 (en) * 2004-12-21 2013-01-08 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
JP2007150419A (ja) * 2005-11-24 2007-06-14 Mitsubishi Electric Corp 電力増幅器
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
US10379168B2 (en) 2007-07-05 2019-08-13 Battelle Energy Alliance, Llc Apparatuses and methods for testing electrochemical cells by measuring frequency response
WO2011140131A1 (en) 2010-05-03 2011-11-10 Battelle Energy Alliance, Llc Crosstalk compensation in analysis of energy storage devices
JP5541114B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 電力増幅器とそれを用いたｍｍｉｃ
US8963645B1 (en) 2011-04-08 2015-02-24 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8466747B1 (en) * 2011-04-08 2013-06-18 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US9035702B2 (en) * 2012-03-08 2015-05-19 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
CN103929132B (zh) * 2014-04-24 2016-12-07 成都锦江电子系统工程有限公司 基于带状线方式的小型大功率微波放大模块
US10345384B2 (en) 2016-03-03 2019-07-09 Battelle Energy Alliance, Llc Device, system, and method for measuring internal impedance of a test battery using frequency response
US10656233B2 (en) 2016-04-25 2020-05-19 Dynexus Technology, Inc. Method of calibrating impedance measurements of a battery
US11054481B2 (en) 2019-03-19 2021-07-06 Battelle Energy Alliance, Llc Multispectral impedance determination under dynamic load conditions
DE112019007087B4 (de) 2019-03-25 2023-12-28 Mitsubishi Electric Corporation Hochfrequenz-Halbleiterverstärker
WO2020223630A1 (en) 2019-05-02 2020-11-05 Dynexus Technology, Inc. Enhanced chirp excitation signal for broadband impedance measurement
US12000902B2 (en) 2019-05-02 2024-06-04 Dynexus Technology, Inc. Multispectral impedance determination under dynamic load conditions
US11422102B2 (en) 2020-01-10 2022-08-23 Dynexus Technology, Inc. Multispectral impedance measurements across strings of interconnected cells
US11519969B2 (en) 2020-01-29 2022-12-06 Dynexus Technology, Inc. Cross spectral impedance assessment for cell qualification
US11757419B2 (en) * 2020-02-25 2023-09-12 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency power amplifier circuit and gain control method
US12149213B2 (en) * 2021-06-02 2024-11-19 Murata Manufacturing Co., Ltd. Wideband multi gain LNA architecture
JP7700614B2 (ja) * 2021-10-01 2025-07-01 住友電気工業株式会社 高周波回路

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Also Published As

Publication number Publication date
EP0949754A2 (de) 1999-10-13
US6249186B1 (en) 2001-06-19
DE69920792T2 (de) 2006-02-23
EP0949754B1 (de) 2004-10-06
DE69920792D1 (de) 2004-11-11
KR100527223B1 (ko) 2005-11-08
JP3668610B2 (ja) 2005-07-06
JPH11298263A (ja) 1999-10-29
HK1021594A1 (en) 2000-06-16
KR19990083035A (ko) 1999-11-25
EP0949754A3 (de) 2002-07-24

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